Pellicle structure and method for forming the same
US-2015309404-A1 · Oct 29, 2015 · US
US9753367B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9753367-B2 |
| Application number | US-201514972258-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2015 |
| Priority date | Jan 7, 2015 |
| Publication date | Sep 5, 2017 |
| Grant date | Sep 5, 2017 |
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The method includes forming a graphite layer on a substrate, forming a supporting layer on the graphite layer to form a stack of the graphite layer and the supporting layer, removing the substrate to separate the stack from the substrate, transferring the stack of the graphite layer and the supporting layer onto a frame, and removing the supporting layer from the frame.
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What is claimed is: 1. A method of fabricating a pellicle, the method comprising: forming a graphite layer on a substrate; forming a supporting layer on the graphite layer to form a stack of the graphite layer and the supporting layer; removing the substrate from the stack of the graphite layer and the supporting layer; transferring the stack of the graphite layer and the supporting layer onto a frame; and removing the supporting layer from the frame, wherein the transferring includes: suspending the stack on a solution containing water; and raising the frame from inside of the solution to a surface of the solution perpendicular to the stack. 2. The method of claim 1 , wherein the supporting layer comprises an organic polymer. 3. The method of claim 2 , wherein the organic polymer comprises PMMA (polymethylmethacrylate). 4. The method of claim 1 , wherein the forming a supporting layer comprises performing a spin coating process. 5. The method of claim 1 , wherein the removing the supporting layer comprises using oxygen plasma. 6. The method of claim 1 , wherein the forming a graphite layer comprises: loading the substrate on a stage in a chamber; and performing a chemical vapor deposition (CVD) process to form the graphite layer on the substrate. 7. The method of claim 6 , wherein the CVD process comprises: using a precursor having at least one of methane (CH 4 ) or ethane (C 2 H 6 ); and heating the substrate and the precursor to raise a temperature of the substrate and the precursor from room temperature to about 1,000° C. in about 2 minutes using a heating lamp. 8. The method of claim 1 , wherein the substrate comprises at least one of copper (Cu), chrome (Cr), nickel (Ni), ruthenium (Ru), titanium (Ti), tantalum (Ta), aluminum (Al), titanium nitride (TiN), tantalum nitride (TaN), silicon wafer, or glass. 9. The method of claim 1 , wherein the removing the substrate comprises: dipping the substrate having the stack of the graphite layer and the supporting layer formed therein in a metal etchant containing at least one of FeCl 3 or ceric ammonium nitrate (CAN), and water. 10. The method of claim 1 , wherein the graphite layer and the frame are directly adhered with each other. 11. A method of fabricating a pellicle, the method comprising: forming a first supporting layer on a first substrate; forming a graphite layer on a second substrate; removing the first substrate and the second substrate to separate the first supporting layer and the graphite layer from the first substrate and the second substrate, respectively; transferring the first supporting layer onto a frame; transferring the graphite layer onto the first supporting layer transferred onto the frame; and removing an exposed portion of the first supporting layer in an opening of the frame. 12. The method of claim 11 , wherein the first supporting layer and the frame are directly adhered with each other, and a portion of the first supporting layer adhered to the frame is not removed. 13. The method of claim 11 , further comprising: forming a second supporting layer on the graphite layer on the second substrate; and removing the second supporting layer, wherein the removing an exposed portion of the first supporting layer and the removing the second supporting layer are independently performed. 14. The method of claim 11 , wherein the transferring the first supporting layer onto the frame comprises suspending the first supporting layer on a surface of a solution, and raising the frame from inside of the solution to the surface of the solution perpendicular to the surface of the solution, and the transferring the graphite layer onto the first supporting layer on the frame comprises suspending the graphite layer on the surface of the solution, and raising the frame having the first supporting layer transferred thereon from the inside of the solution to the surface of the solution perpendicular to the surface of the solution. 15. A method of fabricating a pellicle, the method comprising: forming a first supporting layer on a first substrate; forming a graphite layer on a second substrate; forming a second supporting layer on the graphite layer formed on the second substrate to form a stack of the graphite layer and the second supporting layer; separating the first supporting layer from the first substrate; separating the stack of the graphite layer and the second supporting layer from the second substrate; transferring the first supporting layer onto a frame; transferring the stack of the graphite layer and the second supporting layer onto the first supporting layer transferred on the frame; and removing a portion of the first supporting layer and the second supporting layer. 16. The method of claim 15 , further comprising: rinsing the separated first supporting layer and the stack of the graphite layer and the second supporting layer using a rinsing solution containing water. 17. The method of claim 15 , further comprising: drying the separated first supporting layer and the stack of the graphite layer and the second supporting layer transferred on the frame using nitrogen (N 2 ). 18. The method of claim 15 , wherein the first supporting layer and the graphite layer are directly adhered with each other. 19. The method of claim 15 , wherein removing the portion of the first supporting layer and the second supporting layer comprises a first removing process to remove the portion of the first supporting layer and a second removing process to remove the second supporting layer.
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