Color filter array substrate, display device and manufacturing method of color filter array substrate

Patent metadata

Field	Value
Publication number	US-9753342-B2
Application number	US-201414550036-A
Country	US
Kind code	B2
Filing date	Nov 21, 2014
Priority date	Jun 17, 2014
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

The invention discloses a color filter array substrate, a display device, and a manufacturing method of the color filter array substrate. The color filter array substrate comprises a substrate, a thin film transistor array formed on the substrate, and a color filter formed on the thin film transistor array, wherein the color filter array substrate further comprises a black matrix formed on the color filter, and a planarization layer formed on the black matrix. In the invention, position of the black matrix in the color filter array substrate is changed, and the planarization layer is formed on the black matrix, so that the black matrix is isolated from the first and second electrode layers, thus the black matrix is effectively prevented from affecting the electric field between the first and second electrode layers.

First claim

The invention claimed is:

1. A color filter array substrate, comprising a substrate, a thin film transistor array formed on the substrate, and a color filter formed on the thin film transistor array, wherein the color filter array substrate further comprises a black matrix formed on the color filter, and a planarization layer formed on the black matrix,
wherein the color filter array substrate further comprises a first electrode layer, a passivation layer and a second electrode layer formed above the planarization layer, and the passivation layer is formed between the first electrode layer and the second electrode layer,
wherein the first electrode layer, the passivation layer and the second electrode layer are sequentially formed on the planarization layer, and first electrodes in the first electrode layer are connected to drains of corresponding thin film transistors in the thin film transistor array through via holes which directly pass through both the planarization layer and the color filter, wherein the black matrix is formed on an area of the color filter where the via holes do not pass;
wherein a dielectric constant of the planarization layer is between 3.0 and 5.0; and
wherein a resistivity of the planarization layer is between 10 12 Ω·cm and 10 14 Ω·cm.

2. The color filter array substrate according to claim 1 , wherein a thickness of the planarization layer is between 2.5 μm-3.0 μm.

3. The color filter array substrate according to claim 1 , wherein a material of the planarization layer is any one or a combination of two or more of polymethyl methacrylate, fluorine-containing polymer, Imide-ring containing polymer, organosilane crosslinked polyethylene and tetramethylsilane polymer.

4. A display device, comprising the color filter array substrate of claim 1 .

5. The display device according to claim 4 , wherein a thickness of the planarization layer is between 2.5 μm-3.0 μm.

6. The display device according to claim 4 , wherein a material of the planarization layer is any one or a combination of two or more of polymethyl methacrylate, fluorine-containing polymer, Imide-ring containing polymer, organosilane crosslinked polyethylene and tetramethylsilane polymer.

7. A manufacturing method of a color filter array substrate, comprising steps of:
providing a substrate and forming a thin film transistor array on the substrate;
forming a color filter on the thin film transistor array;
forming a black matrix on the color filter; and
forming a planarization layer on the black matrix, wherein a dielectric constant of the planarization layer is between 3.0 and 5.0 and a resistivity of the planarization layer is between 10 12 Ω·cm and 10 14 Ω·cm,
wherein the manufacturing method of a color filter array substrate further includes a step of:
sequentially forming a first electrode layer, a passivation layer and a second electrode layer on the planarization layer, and
wherein after the step of forming a planarization layer on the black matrix, and before the step of sequentially forming a first electrode layer, a passivation layer and a second electrode layer on the planarization layer, the manufacturing method of a color filter array substrate further includes a step of:
forming via holes, which directly pass through both the color filter and the planarization layer, through dry etching, so that first electrodes in the first electrode layer to be formed subsequently on the planarization layer are connected to drains of corresponding thin film transistors in the thin film transistor array through the via holes, wherein the black matrix is formed on an area of the color filter where the via holes do not pass.

Assignees

• Boe Technology Group Co Ltd
• Chengdu Boe Optoelect Tech Co

Inventors

• Jin Fujiang
• Chen Yi

Classifications

• H01L27/1248

  Electricity · mapped topic

• G02F2001/136222

  Physics · mapped topic

• G02F2001/134372

  Physics · mapped topic

• G02F1/136209 Primary

  Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element · CPC title

• G02F2001/133357

  Physics · mapped topic