Antistatic film, method for manufacturing the same, and display device including the same

US9753291B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9753291-B2
Application numberUS-201314098854-A
CountryUS
Kind codeB2
Filing dateDec 6, 2013
Priority dateApr 29, 2013
Publication dateSep 5, 2017
Grant dateSep 5, 2017

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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An antistatic film includes a substrate, a lower coating layer positioned on the substrate and including a conductive material, tetraethyl orthosilicate (TEOS), and silsesquioxane (SSQ), and an upper coating layer positioned on the lower coating layer and including the conductive material and tetraethyl orthosilicate.

First claim

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What is claimed is: 1. An antistatic film comprising: a substrate; a lower coating layer positioned on the substrate and consisting of a conductive material, tetraethyl orthosilicate (TEOS), and silsesquioxane (SSQ); and an upper coating layer positioned on the lower coating layer and consisting of the conductive material and tetraethyl orthosilicate, wherein the conductive material in the lower coating layer as the conductive material in the upper coating layer are a same material and the conductive material in the lower coating layer has a higher parts by weight than that in the upper coating layer, based on 100 parts by weight of the lower and the upper coating layer on the substrate, respectively. 2. The antistatic film of claim 1 , wherein the conductive material is any one selected from the group consisting of a carbon nanotube (CNT), metal oxide, graphene, and a conductive polymer. 3. The antistatic film of claim 2 , wherein the conductive polymer is one or more selected from the group consisting of polyfluorene, polyphenylene, polypyrene, polyazulene, polynaphthalene, polyacetylene (PAC), poly(p-phenylene vinylene) (PPV), polypyrrole (PPY), polycarbazole, polyindole, polyazepine, poly(thienylene vinylene), polyaniline (PANI), poly(thiophene), poly(p-phenylene sulfide) (PPS), poly(3,4-ethylenedioxy thiophene) (PEDOT), poly(3,4-ethylenedioxy thiophene) doped with poly(styrene sulfonate) (PSS) (PEDOT:PSS), poly(3,4-ethylenedioxy thiophene)-tetramethacrylate (PEDOT-TMA), polyfuran, and a combination thereof. 4. The antistatic film of claim 1 , wherein a thickness of the lower coating layer is larger than the thickness of the upper coating layer. 5. The antistatic film of claim 1 , wherein the lower coating layer contacts the upper coating layer. 6. The antistatic film of claim 1 , wherein the upper and lower coating layers include same constituent materials except that the lower coating layer further includes silisesquioxane and except that the constituent materials in the upper and lower coating layers have different parts by weight. 7. A method for manufacturing an antistatic film, comprising: preparing a substrate; applying a lower coating layer composition consisting of 20 to 25 parts by weight of a conductive material, 7 to 11 parts by weight of tetraethyl orthosilicate, 20 to 30 parts by weight of silsesquioxane, 25 to 40 parts by weight of a solvent, and 8 to 16 parts by weight of an additive based on 100 parts by weight of the lower coating layer composition on the substrate, and heat-treating the lower coating layer composition to form a lower coating layer; and applying an upper coating layer composition consisting of 0.1 to 10 parts by weight of the conductive material, 5 to 30 parts by weight of tetraethyl orthosilicate, 30 to 60 parts by weight of the solvent, and 8 to 16 parts by weight of the additive based on 100 parts by weight of the upper coating layer composition on the lower coating layer, and heat-treating the upper coating layer composition to form an upper coating layer, wherein the conductive material in the lower coating layer is the same as the conductive material in the upper coating layer and the conductive material in the lower coating layer has a higher parts by weight than that in the upper coating layer. 8. The method of claim 7 , wherein the conductive material is any one selected from the group consisting of a carbon nanotube (CNT), metal oxide, graphene, and a conductive polymer. 9. The method of claim 7 , wherein the conductive material is one or more selected from the group consisting of polyfluorene, polyphenylene, polypyrene, polyazulene, polynaphthalene, polyacetylene (PAC), poly(p-phenylene vinylene) (PPV), polypyrrole (PPY), polycarbazole, polyindole, polyazepine, poly(thienylene vinylene), polyaniline (PANI), poly(thiophene), poly(p-phenylene sulfide) (PPS), poly(3,4-ethylenedioxy thiophene) (PEDOT), poly(3,4-ethylenedioxy thiophene) doped with poly(styrene sulfonate) (PSS) (PEDOT:PSS), poly(3,4-ethylenedioxy thiophene)-tetramethacrylate (PEDOT-TMA), polyfuran, and a combination thereof. 10. The method of claim 7 , wherein the heat-treating is performed a 140 to 230° C. for 10 to 20 minutes. 11. The method of claim 7 , wherein the lower coating layer composition or the upper coating layer composition is applied by slit coating or spin coating. 12. A stereoscopic display device comprising: a thin film transistor array substrate; a color filter substrate facing the thin film transistor array substrate and including a black matrix; a black stripe on the color filter substrate and corresponding to the black matrix; and an antistatic film on the black stripe, wherein the antistatic film includes: a lower coating layer consisting of a conductive material, tetraethyl orthosilicate (TEOS), and silsesquioxane (SSQ); and an upper coating layer positioned on the lower coating layer and consisting of the conductive material and tetraethyl orthosilicate, wherein the conductive material in the lower coating layer is the same as the conductive material in the upper coating layer and the conductive material in the lower coating layer has a higher parts by weight than that in the upper coating layer.

Assignees

Inventors

Classifications

  • As siloxane, silicone or silane · CPC title

  • Thickness [relative or absolute] · CPC title

  • G02B1/16Primary

    having an anti-static effect, e.g. electrically conducting coatings · CPC title

  • G02B27/22Primary

    Physics · mapped topic

  • G02F1/13Primary

    based on liquid crystals, e.g. single liquid crystal display cells · CPC title

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What does patent US9753291B2 cover?
An antistatic film includes a substrate, a lower coating layer positioned on the substrate and including a conductive material, tetraethyl orthosilicate (TEOS), and silsesquioxane (SSQ), and an upper coating layer positioned on the lower coating layer and including the conductive material and tetraethyl orthosilicate.
Who is the assignee on this patent?
Lg Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification G02B1/16. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 05 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).