Sputtering target for PVD chamber

US9752228B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9752228-B2
Application numberUS-72319910-A
CountryUS
Kind codeB2
Filing dateMar 12, 2010
Priority dateApr 3, 2009
Publication dateSep 5, 2017
Grant dateSep 5, 2017

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  2. Abstract

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  5. First independent claim

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Abstract

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Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

First claim

Opening claim text (preview).

What is claimed is: 1. A sputtering apparatus comprising: a chamber having a wall defining a process area including a substrate support; a reactive gas source connected to the chamber to provide a reactive gas during processing; a target spaced from the substrate support, the target having a front face defining sputterable target surface extending between peripheral edges of the target and the sputterable target surface defining an overall concave shape substantially between t…

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What does patent US9752228B2 cover?
Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
Who is the assignee on this patent?
Liu Zhendong, Wang Rongjun, Tang Xianmin, and 4 more
What technology area does this patent fall under?
Primary CPC classification C23C14/3407. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Sep 05 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).