Waveguide embedded plasmon laser with multiplexing and electrical modulation

Patent metadata

Field	Value
Publication number	US-9748736-B1
Application number	US-201314052504-A
Country	US
Kind code	B1
Filing date	Oct 11, 2013
Priority date	Oct 16, 2012
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.

First claim

What is claimed is:

1. A device comprising:
a substrate;
a line of metal disposed on the substrate;
an insulating material disposed on the line of metal; and
a line of semiconductor material disposed on the substrate and the insulating material, wherein the line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.

2. The device of claim 1 , wherein a width of the line of semiconductor material disposed on the insulating material determines a resonant condition of the plasmonic cavity and an emission wavelength of the device.

3. The device of claim 1 , wherein a metal of the line of metal includes silver, wherein the insulating material includes magnesium fluoride, and wherein a semiconductor material of the line of semiconductor material includes cadmium sulfide.

4. The device of claim 1 , wherein the line of metal is thicker than about 10 nanometers, and wherein the line of metal is about 10 nanometers to 10 micrometers wide.

5. The device of claim 1 , wherein the insulating material is about 0.1 nanometers to 50 nanometers thick.

6. The device of claim 1 , wherein the line of semiconductor material is about 10 nanometers to 10 micrometers thick and about 10 nanometers to 10 micrometers wide.

7. The device of claim 1 , wherein the line of semiconductor material is substantially perpendicular to the line of metal.

8. The device of claim 1 , wherein the line of semiconductor material includes a first end and a second end, the device further comprising:
a first electrode associated with the first end; and
a second electrode associated with the second end.

9. The device of claim 1 , wherein the line of semiconductor material disposed on the insulating material is configured to be optically pumped, and wherein an end of the line of semiconductor material emits electromagnetic radiation.

10. A device comprising:
a substrate;
a first and a second line of metal disposed on the substrate, the first and the second line of metal being substantially parallel;
an insulating material disposed each of the first and the second line of metal; and
a first, a second, and a third electrode disposed on the substrate, the lines of metal and the electrodes arranged such that the first line of metal is between the first and the second electrodes and the second line of metal is between the second and the third electrodes; and
a line of semiconductor material overlaying the first line of metal, disposed on the insulating material, forming a first plasmonic cavity, and overlaying the second line of metal, disposed on the insulating material, forming a second plasmonic cavity.

11. The device of claim 10 , wherein a first width of the line of semiconductor material overlaying the first line of metal determines a resonant condition of the first plasmonic cavity and an emission wavelength of the first plasmonic cavity, and wherein a second width of the line of semiconductor material overlaying the second line of metal determines a resonant condition of the second plasmonic cavity and an emission wavelength of the second plasmonic cavity.

12. The device of claim 11 , wherein the first width is different than the second width.

Assignees

• Ma ren-min
• Zhang Xiang
• Univ California

Inventors

• Ma ren-min
• Zhang Xiang

Classifications

• H01S3/0632

  Thin film lasers in which light propagates in the plane of the thin film · CPC title

• H01S5/1042

  Optical microcavities, e.g. cavity dimensions comparable to the wavelength · CPC title

• H01S5/4031

  Edge-emitting structures · CPC title

• H01S5/1046 Primary

  Comprising interactions between photons and plasmons, e.g. by a corrugated surface · CPC title

• H01S5/3059

  in II-VI materials · CPC title