Multiple carbon nanotube transfer and its applications for making high-performance carbon nanotube field-effect transistor (CNFET), transparent electrodes, and three-dimensional integration of CNFETs

Patent metadata

Field	Value
Publication number	US-9748421-B2
Application number	US-71841810-A
Country	US
Kind code	B2
Filing date	Mar 5, 2010
Priority date	Dec 4, 2009
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

A wafer-scale multiple carbon nanotube transfer process is provided. According to one embodiment of the invention, plasma exposure processes are performed at various stages of the fabrication process of a carbon nanotube device or article to improve feasibility and yield for successive transfers of nanotubes. In one such carbon nanotube transfer process, a carrier material is partially etched by a plasma process before removing the carrier material through, for example, a wet etch. By applying the subject plasma exposure processes, fabrication of ultra-high-density nanotubes and ultra-high-density nanotube grids or fabrics is facilitated. The ultra-high-density nanotubes and ultra-high-density nanotube grids or fabrics fabricated utilizing embodiments of the invention can be used, for example, to make high-performance carbon nanotube field effect transistors (CNFETs) and low cost, highly-transparent, and low-resistivity electrodes for solar cell and flat panel display applications. Further, three-dimensional CNFETs can be provided by utilizing the subject plasma exposure processes.

First claim

What is claimed is:

1. A method of forming a carbon nanotube-based element, the method comprising:
growing carbon nanotubes on a source substrate;
depositing a carrier material on the source substrate to coat the carbon nanotubes;
applying an adhesive tape to the source substrate and removing the adhesive tape from the source substrate such that the carrier material and carbon nanotubes are removed with the adhesive tape;
applying the adhesive tape having the carrier material and carbon nanotubes onto a target substrate;
releasing the adhesive tape from the carrier material and carbon nanotubes such that the carrier material and carbon nanotubes remain on the target substrate;
exposing the target substrate having the carrier material and the carbon nanotubes to a first plasma processing; and
removing the carrier material from the target substrate after performing the first plasma processing,
wherein the performing of the first plasma processing comprises exposing the target substrate to a plasma at conditions capable of partially etching the carrier material, and wherein said method further comprises repeating at least two times:
growing additional carbon nanotubes on a second source substrate;
depositing a second carrier material on the second source substrate to coat the additional carbon nanotubes:
applying a second adhesive tape to the second source substrate and removing the second adhesive tape from the second source substrate such that the second carrier material and additional carbon nanotubes are removed with the second adhesive tape;
applying the second adhesive tape having the second carrier material and additional carbon nanotubes onto the target substrate having the carbon nanotubes after the removing of the carrier material from the target substrate;
releasing the second adhesive tape from the second carrier material and additional carbon nanotubes such that the second carrier material and additional carbon nanotubes remain on the target substrate;
exposing the target substrate having the second carrier material and the additional carbon nanotubes to a second plasma processing; and
removing the second carrier material from the target substrate after performing the second plasma processing;
and obtaining, after the performance of these step, an ultra-high density carbon nanotube-based element having a density of carbon nanotubes of greater than or equal to 250 carbon nanotubes/μm.

2. The method of forming the carbon nanotube-based element according to claim 1 , wherein the first plasma processing and the second plasma processing are performed under the same process conditions.

Assignees

• Mitra Subhasish
• Patil Nishant P
• Wan Chung Chun
• Wong H -S Philip
• Univ Leland Stanford Junior

Inventors

• Mitra Subhasish
• Patil Nishant P
• Wan Chung Chun
• Wong H -S Philip

Classifications

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• H01L51/0048

  Electricity · mapped topic

• H01L51/003

  Electricity · mapped topic

• H01L51/0013

  Electricity · mapped topic