Imaging device having a third circuit with a region overlapping with a fourth circuit

Patent metadata

Field	Value
Publication number	US-9748291-B2
Application number	US-201514859530-A
Country	US
Kind code	B2
Filing date	Sep 21, 2015
Priority date	Sep 26, 2014
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an n-th region (n is a natural number of 2 or more and 16 or less) each including a first circuit, a second circuit, a third circuit, and a fourth circuit. The first to third circuits each include a transistor in which silicon is used in an active layer or an active region. The fourth circuit includes a photoelectric conversion element and a transistor in which an oxide semiconductor is used in an active layer. The first circuit includes a region overlapping with the fourth circuit. The third circuit includes a region overlapping with the fourth circuit.

First claim

The invention claimed is:

1. An imaging device comprising:
a first region to an n-th region (n is a natural number of 2 or more and 16 or less); and
a first circuit, a second circuit, a third circuit, and a fourth circuit in each of the first region to the n-th region,
wherein the first to third circuits each include a transistor including silicon in a channel formation region,
wherein the fourth circuit includes a photoelectric conversion element and a transistor including an oxide semiconductor in a channel formation region,
wherein the first circuit is configured to read out a first signal from the third circuit,
wherein the second circuit is configured to output a second signal for driving the fourth circuit,
wherein the third circuit is configured to process a third signal output from the fourth circuit,
wherein the fourth circuit is configured to convert light into the third signal,
wherein the first circuit includes a region overlapping with the fourth circuit, and
wherein the third circuit includes a region overlapping with the fourth circuit.

2. The imaging device according to claim 1 , wherein the oxide semiconductor includes In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf).

3. The imaging device according to claim 1 , wherein the photoelectric conversion element includes selenium.

4. The imaging device according to claim 1 , wherein the first circuit and the second circuit each include a shift register circuit and a buffer circuit.

5. The imaging device according to claim 1 , wherein the third circuit includes a correlated double sampling circuit, an analog-to-digital converter circuit, and a latch circuit.

6. The imaging device according to claim 1 , wherein the first circuit is divided and positioned in two regions.

7. The imaging device according to claim 1 , wherein the second circuit is divided and positioned in two regions.

8. The imaging device according to claim 1 ,
wherein the first circuit, the second circuit, and the third circuit are in a first layer,
wherein the transistor included in the fourth circuit is in a second layer,
wherein the photoelectric conversion element is in a third layer, and
wherein the second layer is between the first layer and the third layer.

9. An electronic device comprising:
the imaging device according to claim 1 ; and
a display device.

10. An imaging device comprising a pixel portion, the imaging device comprising:
a first circuit, a second circuit, a third circuit, and a fourth circuit,
wherein the first to third circuits each include a transistor including silicon in a channel formation region,
wherein the pixel portion includes the fourth circuit,
wherein the fourth circuit includes a photoelectric conversion element and a transistor including an oxide semiconductor in a channel formation region,
wherein the first circuit is configured to read out a first signal from the third circuit,
wherein the second circuit is configured to output a second signal for driving the fourth circuit,
wherein the third circuit is configured to process a third signal output from the fourth circuit,
wherein the fourth circuit is configured to convert light into the third signal,
wherein the first circuit includes a region overlapping with the pixel portion, and
wherein the third circuit includes a region overlapping with the pixel portion.

11. The imaging device according to claim 10 , wherein the oxide semiconductor includes In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf).

12. The imaging device according to claim 10 , wherein the photoelectric conversion element includes selenium.

13. The imaging device according to claim 10 , wherein the first circuit and the second circuit each include a shift register circuit and a buffer circuit.

14. The imaging device according to claim 10 , wherein the third circuit includes a correlated double sampling circuit, an analog-to-digital converter circuit, and a latch circuit.

15. The imaging device according to claim 10 , wherein the first circuit is divided and positioned in two regions.

16. The imaging device according to claim 10 , wherein the second circuit is divided and positioned in two regions.

17. The imaging device according to claim 10 ,
wherein the first circuit, the second circuit, and the third circuit are in a first layer,
wherein the transistor included in the fourth circuit is in a second layer,
wherein the photoelectric conversion element is in a third layer, and
wherein the second layer is between the first layer and the third layer.

18. An electronic device comprising:
the imaging device according to claim 10 ; and
a display device.

Assignees

• Semiconductor Energy Lab

Inventors

• Ikeda Takayuki
• Kurokawa Yoshiyuki

Classifications

• H01L29/24

  Electricity · mapped topic

• H01L27/14621

  Electricity · mapped topic

• H01L27/14659

  Electricity · mapped topic

• H01L27/14663

  Electricity · mapped topic

• H01L27/14634

  Electricity · mapped topic