Semiconductor structure and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9748264-B1
Application number	US-201615148485-A
Country	US
Kind code	B1
Filing date	May 6, 2016
Priority date	Mar 30, 2016
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

A semiconductor structure and a manufacturing method are provided. The semiconductor structure includes a substrate, conductive layers, insulating layers, a memory structure including first memory structure clusters and second memory structure clusters, isolation trenches, and common source trenches. The conductive layers and the insulating layers are interlaced and stacked on the substrate. Each first memory structure cluster include first memory structures and each first memory structure cluster include second memory structures. The first and second memory structures penetrate the conductive layers and the insulating layers. Each isolation trench is formed between a first memory structure cluster and a second memory structure cluster. The isolation trenches span horizontally on the substrate in a discontinuous manner separated by gaps. Common source trenches are formed on the substrate that run substantially parallel with the isolation trenches.

First claim

What is claimed is:

1. A semiconductor structure, comprising:
a substrate;
a plurality of conductive layers and a plurality of insulating layers formed on the substrate, wherein the conductive layers and the insulating layers are interlaced and stacked on the substrate;
a structure comprising: a first group of memory structure clusters and a second group of memory structure clusters, formed on the substrate and through the conductive layers and the insulating layers, each of the first group of memory structure clusters including a plurality of first memory structures, each first memory structure having a first cross-section shape, each of the second group of memory structure clusters including a plurality of second memory structures, each second memory structure having a second cross-section shape, the first cross-section shape and the second cross-section shape complementing each other;
a plurality of isolation trenches formed on the substrate, each isolation trench disposed between a corresponding first memory structure cluster and a corresponding second memory structure cluster such that neighboring isolation trenches on the substrate are separated by a gap that is aligned with an axial direction of the neighboring isolation trenches; and
a plurality of common source trenches formed on the substrate that run substantially parallel with the isolation trenches,
wherein each first memory structure cluster and each second memory structure cluster has a C-shaped cross section, and wherein each first memory structure cluster and a second memory structure cluster are bilaterally symmetric with respect to an associated isolation trench.

2. The semiconductor structure according to claim 1 , wherein the conductive layers comprise replacement gates with a conducting metal fill-in.

3. The semiconductor structure according to claim 1 , further comprising:
epitaxial structures, each epitaxial structure formed vertically between an isolation trench and the substrate such that a corresponding first memory structure and a corresponding second memory structure are electrically connected to the substrate via the epitaxial structure.

4. The semiconductor structure according to claim 1 , wherein each of the first memory structures and each of the second memory structures respectively comprise:
a memory structure layer, comprising:
a blocking layer formed on the conductive layers;
a memory storage layer formed on the blocking layer; and
a tunneling layer formed on the memory storage layer; and

a channel layer formed on the memory structure layer, wherein the channel layer is a polysilicon layer.

5. The semiconductor structure according to claim 1 , wherein each memory structure cluster is a vertical memory structure cluster that comprises one to four memory structures, and wherein each memory structure is a vertical memory structure.

6. The semiconductor structure according to claim 1 , wherein each first memory structure cluster has a C-shaped cross section, wherein each first memory structure cluster and a second memory structure cluster are bilaterally symmetric with respect to an associated isolation trench, wherein each second memory structure cluster has a C-shaped cross section, and wherein each second memory structure cluster and a first memory structure cluster are bilaterally symmetric with respect to an associated isolation trench.

7. The semiconductor structure according to claim 1 , further comprising:
first contact structures, each electrically connected to a corresponding first memory structure; and
second contact structures, each electrically connected to a corresponding second memory structure.

8. The semiconductor structure according to claim 7 , further comprising:
first bit lines electrically connected to the first contact structures; and
second bit lines electrically connected to the second contact structures, wherein the first bit lines and the second bit lines are substantially parallel to each other while the first bit lines and the second bit lines are substantially orthogonal to the common source trenches.

9. The semiconductor structure according to claim 8 , wherein the first bit lines are electrically coupled to the common source trenches while the second bit lines are electrically coupled to the common source trenches.

10. A manufacturing method of a semiconductor structure, comprising:
forming a plurality of conductive layers and a plurality of insulating layers on a substrate, wherein the conductive layers and the insulating layers are interlaced and stacked on the substrate;
forming a structure comprising: a first group of memory structure clusters and a second group of memory structure clusters, each being formed on the substrate and through the conductive layers and the insulating layers, each of the first group of memory structure clusters including a first number of first memory structures, each first memory structure having a first cross-section shape, each of the second group of memory structure clusters including a second number of second memory structures, each second memory structure having a second cross-section shape, the first cross-section shape and the second cross-section shape complementing each other;
forming a plurality of isolation trenches on the substrate, each isolation trench disposed between a corresponding first memory structure cluster and a corresponding second memory structure cluster such that neighboring isolation trenches on the substrate are separated by gaps that are aligned with an axial direction of the neighboring isolation trenches;
forming a plurality of common source trenches on the substrate that run substantially parallel with the isolation trenches; and
etching the conductive layers to form a space and filling the etched space with a conducting metal,
wherein each first memory structure cluster and each second memory structure cluster has a C-shaped cross section, and wherein each first memory structure cluster and a second memory structure cluster are bilaterally symmetric with respect to an associated isolation trench.

11. The manufacturing method of the semiconductor structure according to claim 10 , further comprising:
forming epitaxial structures, each epitaxial structure being formed vertically between an isolation trench and the substrate such that a corresponding first memory structure and a corresponding second memory structure are electrically connected to the substrate via the epitaxial structure.

12. The manufacturing method of the semiconductor structure according to claim 10 , wherein forming each first memory structure, each second memory structure, and each isolation trench comprises:
forming a recess with an elliptical cross-section, the recess penetrating the conductive layers and the insulating layers as deep as the substrate;
forming a memory structure material layer in the recess;
forming a channel material layer on the memory structure material layer;
forming an oxide material layer on the channel material layer to fill in the recess, the oxide material layer having an air gap;
removing a portion of the conductive layers, a portion of the insulating layers, a portion of the memory structure material layer, a portion of the channel material layer, and a portion of the oxide material layer for forming a trench space; and
filling the trench space with an isolation material such that an isolation trench is formed.

13. The manufacturing method of the semiconductor structure according to claim 12 , wherein forming the trench space comprises:
etching to remove the portion of the conductive layers, the portion of the insulating layers, the portion of the

Assignees

• Macronix Int Co Ltd

Inventors

• Jiang yu wei
• Yeh Teng Hao

Classifications

• H10W10/021 Primary

  of air gaps · CPC title

• H10W10/20

  Air gaps · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H01L29/66545

  Electricity · mapped topic