Magneto-resistive effect element having side shield integrated with upper shield

Patent metadata

Field	Value
Publication number	US-9747933-B1
Application number	US-201615044559-A
Country	US
Kind code	B1
Filing date	Feb 16, 2016
Priority date	Feb 16, 2016
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

A magneto-resistive effect element (MR element) has an upper shield that is magnetized in a cross track direction, a lower shield that is positioned at an interval relative to the upper shield in a down track direction, and a multilayer film that is positioned between the upper shield and the lower shield and that faces an air bearing surface (ABS). The multilayer film has a free layer where its magnetization direction fluctuates relative to an external magnetic field, a pinned layer where its magnetization direction is pinned against the external magnetic field, a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and an insulating layer that is positioned at a back side of the free layer viewed from the ABS. The MR element further has a pair of side shields that are positioned at both sides of the free layer and the insulating layer in a cross track direction. The side shields contact the upper shield on the sides of the free layer and the insulating layer in the cross track direction.

First claim

What is claimed is:

1. A magneto-resistive effect element, comprising:
an upper shield that is magnetized in a cross track direction,
a lower shield that is positioned at an interval in a down track direction relative to the upper shield; and
a multilayer film that is positioned between the upper shield and the lower shield, and that faces an air bearing surface (ABS), wherein
the multilayer film comprises:

a free layer having a magnetization direction that fluctuates against an external magnetic field,
a pinned layer having a magnetization direction that is pinned against the external magnetic field,
a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and
an insulating layer that is positioned at a back side of the free layer viewed from the ABS; and
the magneto-resistive effect element further comprises a pair of side shields that are positioned on both sides of the free layer and the insulating layer in the cross track direction, and that include soft magnetic layers, wherein
the soft magnetic layers of the side shields contact the upper shield on the sides of the free layer and the insulating layer in the cross track direction,
the multilayer film comprises an antiferromagnetic layer that pins a magnetization of the pinned layer,
the pinned layer and the antiferromagnetic layer extend in a height direction beyond a first surface, which is away from the ABS in the height direction, by a distance that is equal to a height of the free layer in the height direction, and
at least a portion of the pinned layer and at least a portion of the antiferromagnetic layer have greater length than the free layer in the cross track direction, respectively.

2. A magneto-resistive effect element, comprising:
an upper shield that is magnetized in a cross track direction,
a lower shield that is positioned at an interval in a down track direction relative to the upper shield; and
a multilayer film that is positioned between the upper shield and the lower shield, and that faces an air bearing surface (ABS), wherein
the multilayer film comprises:

a free layer having a magnetization direction that fluctuates against an external magnetic field,
a pinned layer having a magnetization direction that is pinned against the external magnetic field,
a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and
an insulating layer that is positioned at a back side of the free layer viewed from the ABS; and
the magneto-resistive effect element further comprises a pair of aide shields that are positioned on both sides of the free layer and the insulating layer in the cross track direction, and that include soft magnetic layers, wherein
the soft magnetic layers of the side shields contact the upper shield on the sides of the free layer and the insulating layer in the cross track direction,
the multilayer film comprises an antiferromagnetic layer that pins a magnetization of the pinned layer,
the pinned layer and the antiferromagnetic layer extend in a height direction beyond a first surface, which is away from the ABS in the height direction, by a distance that is equal to a height of the free layer in the height direction, and
lengths of the pinned layer and the antiferromagnetic layer in the cross track direction are increased as the pinned layer and the antiferromagnetic layer extend from the ABS in the height direction, respectively.

3. A magneto-resistive effect element, comprising:
an upper shield that is magnetized in a cross track direction,
a lower shield that is positioned at an interval in a down track direction relative to the upper shield; and
a multilayer film that is positioned between the upper shield and the lower shield, and that faces an air bearing surface (ABS), wherein
the multilayer film comprises:

a free layer having a magnetization direction that fluctuates against an external magnetic field,
a pinned layer having a magnetization direction that is pinned against the external magnetic field,
a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and
an insulating layer that is positioned at a back side of the free layer viewed from the ABS; and
the magneto-resistive effect element further comprises a pair of aide shields that are positioned on both sides of the free layer and the insulating layer in the cross track direction, and that include soft magnetic layers, wherein
the soft magnetic layers of the side shields contact the upper shield on the sides of the free layer and the insulating layer in the cross track direction,
the multilayer film comprises an antiferromagnetic layer that pins a magnetization of the pinned layer,
the pinned layer and the antiferromagnetic layer extend in a height direction beyond a first surface, which is away from the ABS in the height direction, by a distance that is equal to a height of the free layer in the height direction,
the pinned layer and the antiferromagnetic layer comprise:
a first portion that faces the ABS,
a second portion that is connected to the first portion, and that is farther away from the ABS than the first portion, and
a third portion that is connected to the second portion, and that is farther away from the ABS than the second portion;

a length of the first portion in the cross track direction is constant in the height direction, a length of the second portion in the cross track direction is increased at a first ratio as the second portion extends from the ABS in the height direction, and a length of the third portion in the cross track direction is increased at a second ratio, which is greater than the first ratio, as the third portion extends from the ABS in the height direction.

4. The magneto-resistive effect element according to claim 3 , wherein
the first portion, the second portion and the third portion define a common center line extending in the height direction and symmetrical shapes relative to the center line; and
an inclination angle of the external edge of the second portion in the cross track direction at a boundary of the first portion and the second portion is greater than an inclination angle of the external edge of the third portion relative to the cross track direction at a boundary of the second portion and the third portion.

5. A magneto-resistive effect element, comprising:
an upper shield that is magnetized in a cross track direction,
a lower shield that is positioned at an interval in a down track direction relative to the upper shield; and
a multilayer film that is positioned between the upper shield and the lower shield, and that faces an air bearing surface (ABS), wherein
the multilayer film comprises:

a free layer having a magnetization direction that fluctuates against an external magnetic field,
a pinned layer having a magnetization direction that is pinned against the external magnetic field,
a nonmagnetic spacer layer that is positioned between the free layer and the pinned layer, and
an insulating layer that is positioned at a back side of the free layer viewed from the ABS; and
the magneto-resistive effect element further comprises a pair of aide shields that are positioned on both sides of the free layer and the insulating layer in the cross track direction, and that include soft magnetic layers, wherein
the soft magnetic layers of the side shields contact the upper shield on the sides of the free layer and the insulating layer in the cross track direction,
the multilayer film comprises an antiferromagnetic layer that pins a magnetization of the pinned layer,
the pinned layer and the antiferromagnetic layer extend in a height direction beyond a first sur

Assignees

• Tdk Corp

Inventors

• Watanabe Hisayoshi
• Degawa Naomichi
• Miura Satoshi
• Hashino Masachika
• Hiraki Tetsuya
• Kojima Hidekazu

Classifications

• G11B5/3912 Primary

  Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title

• G11B2005/3996

  large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices · CPC title