Tunnel valve read sensor with crystalline alumina tunnel barrier deposited using room temperature techniques

Patent metadata

Field	Value
Publication number	US-9747930-B2
Application number	US-201514961781-A
Country	US
Kind code	B2
Filing date	Dec 7, 2015
Priority date	Dec 7, 2015
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

In one general embodiment, an apparatus includes a magnetic tunnel junction device having a reference layer, a free layer, and a tunnel barrier layer between the free and reference layers. The tunnel barrier layer is primarily crystalline alumina. In another general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.

First claim

What is claimed is:

1. An apparatus, comprising:
an array of magnetic tunnel junction devices arranged along a tape bearing surface of a magnetic tape head module, each magnetic tunnel junction device having a reference layer, a free layer, and a tunnel barrier layer between the free and reference layers,
wherein the tunnel barrier layer of each magnetic tunnel junction device is primarily crystalline alumina,
wherein substantially no amorphous native oxide sublayer is present between each tunnel barrier layer and a layer immediately thereunder,
wherein the layer immediately under each tunnel barrier layer includes metal oxide crystallites, wherein the metal oxide crystallites are a template for the crystalline alumina of the tunnel barrier layer.

2. An apparatus as recited in claim 1 , comprising:
a drive mechanism for passing a magnetic recording tape over the magnetic module; and
a controller electrically coupled to each magnetic tunnel junction device.

3. An apparatus as recited in claim 1 , wherein each tunnel barrier layer includes a graded transition layer of alumina with the metals in the free layer or reference layer under the tunnel barrier layer.

4. An apparatus as recited in claim 1 , wherein each tunnel barrier layer has a physical gradient in a degree of crystallinity that increases from a bottom to a top thereof, with the highest degree of crystallinity being at the top of the tunnel barrier layer.

5. An apparatus as recited in claim 1 , wherein an upper surface of the free layer or reference layer under each tunnel barrier layer has physical characteristics of being cleaned at a milling angle of between 40 and 80 degrees for a duration sufficient to remove an amorphous native oxide sublayer therefrom, wherein the physical characteristics include absence of a metal oxide along the upper surface having an oxygen to metal ratio in the metal oxide that is outside an approximately stoichiometric ratio.

6. An apparatus as recited in claim 5 , wherein the upper surface of the free layer or reference layer under each tunnel barrier layer has physical characteristics of oxygen exposure prior to formation of the tunnel barrier layer thereabove.

7. An apparatus as recited in claim 6 , wherein the physical characteristics of oxygen exposure include presence of metal oxide crystallites.

8. An apparatus as recited in claim 7 , wherein each tunnel barrier layer includes a graded transition layer of alumina with the metals in the free layer or reference layer under the tunnel barrier layer.

9. An apparatus, comprising:
an array of magnetic tunnel junction devices arranged along a tape bearing surface of a magnetic tape head module, each magnetic tunnel junction device having a reference layer, a free layer, and a tunnel barrier layer between the free and reference layers,
wherein each tunnel barrier layer is primarily crystalline alumina,
wherein the tunnel barrier layer is formed on the reference layer, the reference layer being of CoFe(B),
wherein a graded transition layer of CoFeAlO x is formed between the CoFe(B) reference layer and the alumina tunnel barrier layer.

10. An apparatus as recited in claim 9 , wherein the layer immediately under each tunnel barrier layer includes metal oxide crystallites.

11. An apparatus as recited in claim 10 , wherein the metal oxide crystallites are a template for the crystalline alumina of the tunnel barrier layer, wherein each tunnel barrier layer includes a graded transition layer of alumina with the metals in the free layer or reference layer under the tunnel barrier layer.

12. An apparatus as recited in claim 9 , wherein each tunnel barrier layer has a physical gradient in a degree of crystallinity that increases from a bottom to a top thereof, with the highest degree of crystallinity being at the top of the tunnel barrier layer.

13. An apparatus as recited in claim 12 , wherein each tunnel barrier layer has a physical gradient in a quality of crystallinity that increases from a bottom to a top thereof, with the highest quality of crystallinity being toward the bottom of the tunnel barrier layer.

14. An apparatus as recited in claim 13 , wherein an upper surface of the free layer or reference layer under each tunnel barrier layer has physical characteristics of being cleaned at a milling angle of between 40 and 80 degrees for a duration sufficient to remove an amorphous native oxide sublayer therefrom, wherein the physical characteristics include absence of a metal oxide along the upper surface having an oxygen to metal ratio in the metal oxide that is outside an approximately stoichiometric ratio.

15. An apparatus as recited in claim 14 , wherein the upper surface of the free layer or reference layer under each tunnel barrier layer has physical characteristics of oxygen exposure prior to formation of the tunnel barrier layer thereabove, wherein the physical characteristics of oxygen exposure include presence of metal oxide crystallites.

16. An apparatus as recited in claim 15 , wherein each tunnel barrier layer includes a graded transition layer of alumina with the metals in the free layer or reference layer under the tunnel barrier layer.

17. An apparatus, comprising:
a magnetic tunnel junction device having a reference layer, a free layer, and a tunnel barrier layer between the free and reference layers,
the tunnel barrier layer is primarily crystalline alumina,
wherein the tunnel barrier layer is formed on the reference layer, the reference layer being of CoFe, wherein a graded transition layer of CoFeAlO x is formed between the CoFe reference layer and the alumina tunnel barrier layer.

Assignees

• IBM

Inventors

• Biskeborn Robert G
• Lo Calvin S
• Topuria Teya

Classifications

• H01L43/02

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• G11B5/3909 Primary

  Arrangements using a magnetic tunnel junction · CPC title

• C23C14/081

  of aluminium, magnesium or beryllium · CPC title

• G11B5/1272

  Assembling or shaping of elements (G11B5/1278 takes precedence) · CPC title