Systems and methods for reducing polarization in imaging detectors

Patent metadata

Field	Value
Publication number	US-9746565-B2
Application number	US-201614994895-A
Country	US
Kind code	B2
Filing date	Jan 13, 2016
Priority date	Jan 13, 2016
Publication date	Aug 29, 2017
Grant date	Aug 29, 2017

Abstract

A method is provided including acquiring detection events with a radiation detector that includes a semiconductor plate. Electrons and holes are generated in the semiconductor plate responsive to absorption of ionizing radiation. The holes including groups of holes having different effective masses for corresponding different valence energy bands. The method also includes optically coupling infrared (IR) radiation into the semiconductor plate of the radiation detector. The IR radiation has at least one wavelength selected from a spectral range including wavelengths to which the semiconductor plate is partially transparent. The wavelengths of the IR radiation are configured to excite at least some of the holes from a first group at a first valence energy band to a second group at a second valence energy band, with the holes of the second group having lower effective masses than corresponding holes of the first group.

First claim

What is claimed is:

1. A method comprising:
acquiring detection events from at least one of X-ray or nuclear medicine (NM) emitted radiation with a radiation detector comprising a semiconductor plate, wherein the detector is configured to produce electrical signals in response to absorption of the at least one of X-ray or nuclear medicine (NM) emitted radiation in the semiconductor plate, wherein electrons and holes are generated responsive to the at least one of X-ray or NM emitted radiation, the holes including groups of holes having different effective masses for corresponding different valence energy bands; and
optically coupling infrared (IR) radiation into the semiconductor plate of the radiation detector during the acquiring of the detection events from the at least one of X-ray or NM emitted radiation, the IR radiation having at least one wavelength selected from a spectral range including wavelengths to which the semiconductor plate is partially transparent and which are configured to excite at least some of the holes from a first group at a first valence energy band to a second group at a second valence energy band, wherein the holes of the second group have lower effective masses than corresponding holes of the first group.

2. The method of claim 1 , wherein the spectral range includes wavelengths in the range from 3 micrometers (μm) to 16.5 micrometers (μm).

3. The method of claim 1 , wherein optically coupling IR radiation into the semiconductor plate comprises generating wavelengths of 9.4 micrometers (μm) and 10.6 micrometers (μm) with a laser.

4. The method of claim 1 , wherein the different valence energy bands include a heavy-hole band corresponding to heavy-holes and a light-hole band corresponding to light-holes, wherein the light-holes have lower effective masses than the heavy-holes, and wherein optically coupling IR radiation into the semiconductor plate comprises providing IR radiation configured to cause transition of at least some holes from a group corresponding to the heavy-hole band into holes of a group corresponding to the light-hole band.

5. The method of claim 1 , wherein the different valence energy bands include a heavy-hole band corresponding to heavy-holes, a light-hole band corresponding to light-holes, and a spin-orbit band corresponding to spin-orbit-holes, wherein the spin-orbit holes have lower effective masses than the light-holes, wherein the light-holes have lower effective masses than the heavy-holes, and wherein optically coupling IR radiation into the semiconductor place comprises providing IR radiation configured to cause transition of at least one of:
at least some holes from a group corresponding to the heavy-hole band into holes of a group corresponding to the light-hole band,
at least some holes from a group corresponding to the heavy-hole band into holes of a group corresponding to the spin-orbit band, or
at least some holes from the group corresponding to the light-hole band into holes of the group corresponding to the spin-orbit band.

6. The method of claim 1 , wherein the semiconductor plate comprises a first surface, a second surface, and sidewalls, the first surface opposed to the second surface and the sidewalls interposed between the first surface and the second surface, wherein a monolithic cathode electrode is disposed on the first surface and pixelated anode electrodes disposed on the second surface, wherein optically coupling the IR radiation into the semiconductor plate comprises coupling the IR radiation into the semiconductor plate via the sidewalls.

7. The method of claim 1 , wherein the semiconductor plate comprises a first surface, a second surface, and sidewalls, the first surface opposed to the second surface and the sidewalls interposed between the first surface and the second surface, wherein a monolithic cathode electrode is disposed on the first surface and pixelated anode electrodes disposed on the second surface, wherein optically coupling the IR radiation into the semiconductor plate comprises coupling the IR radiation into the semiconductor plate via the cathode electrode that is at least partially transparent to the IR radiation.

8. The method of claim 1 , wherein the intensity of the IR radiation is selected based on at least one of detector temperature, amount of doping in the semiconductor plate, composition of the semiconductor plate, or intensity of the ionizing radiation.

9. The method of claim 1 , wherein the intensity of the IR radiation is at least 0.066 watt/square centimeter.

10. The method of claim 1 , wherein the radiation detector is a part of a detection unit in at least one of a CT system, diagnostic CT system, spectral CT system, SPECT system, SPECT-CT system, PET system, or PET-CT system.

11. The method of claim 1 , wherein the radiation detector is used for both CT and SPECT imaging in a SPECT-CT system.

12. The method of claim 1 , wherein the IR radiation is generated by a light source that is coupled to light guides.

13. The method of claim 12 , wherein the light guides comprise a Bragg grating.

14. A radiation detector comprising:
a semiconductor plate, wherein the detector is configured to produce electrical signals in response to absorption of ionizing radiation from at least one of X-ray or nuclear medicine (NM) emitted radiation in the semiconductor plate, wherein electrons and holes are generated responsive to absorption of the ionizing radiation, the holes including groups of holes having different effective masses for corresponding different valence energy bands;
an infrared (IR) radiation source configured to provide IR radiation to the semiconductor plate; and
at least one processor operably coupled to the semiconductor plate, the at least one processor configured to provide IR radiation into the semiconductor plate from the IR radiation source during absorption of the ionizing radiation from the at least one of X-ray or NM emitted radiation, the IR radiation having at least one wavelength selected from a spectral range including wavelengths to which the semiconductor plate is partially transparent and which are configured to excite at least some of the holes from a first group at a first valence energy band to a second group at a second valence energy band, wherein the holes of the second group have lower effective masses than corresponding holes of the first group.

15. The radiation detector of claim 14 , wherein the semiconductor plate comprises a first surface, a second surface, sidewalls, a monolithic cathode electrode, and pixelated anode electrodes, the first surface opposed to the second surface and the sidewalls interposed between the first surface and the second surface, the monolithic cathode electrode disposed on the first surface and the pixelated anode electrodes disposed on the second surface, wherein the IR radiation source is configured to direct the IR radiation into the semiconductor plate via the sidewalls.

16. The radiation detector of claim 14 , wherein the semiconductor plate comprises a first surface, a second surface, sidewalls, a monolithic cathode electrode, and pixelated anode electrodes, the first surface opposed to the second surface and the sidewalls interposed between the first surface and the second surface, the monolithic cathode electrode disposed on the first surface and the pixelated anode electrodes disposed on the second surface, wherein the IR radiation source is configured to direct the IR radiation into the semiconductor plate via the cathode electrode.

17. The radiation detector of claim 14 , wherein the IR source comprises a light so

Assignees

• Gen Electric

Inventors

• Shahar Arie

Classifications

• G01T1/24 Primary

  with semiconductor detectors · CPC title

• G01T1/249

  specially adapted for use in SPECT or PET (SPECT imaging G01T1/1642; PET imaging G01T1/2985; detecting prohibited goods, e.g. weapons, explosives, hazardous substances, contraband or smuggled objects G01V5/20) · CPC title