Process for preparing higher halosilanes and hydridosilanes

US9745200B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9745200-B2
Application numberUS-201113989823-A
CountryUS
Kind codeB2
Filing dateDec 2, 2011
Priority dateDec 14, 2010
Publication dateAug 29, 2017
Grant dateAug 29, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

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The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

First claim

Opening claim text (preview).

The invention claimed is: 1. A process for preparing a higher halosilane, the process comprising: converting at least one halosilane of formula: Si n X 2n+2 , by disproportionation to a product mixture comprising at least one higher halosilane of formula: Si m X 2m+2 , and at least one lower halosilane of formula: Si a X 2a+2 , wherein n is equal to or larger than 2; m is larger than n; a is 1 or 2; and X is F, Cl, Br, I, or a combination thereof, and wherein a reaction is catalysed by at least one tertiary phosphine, wherein the at least one halosilane is selected from the group consisting of Si 2 X 6 , Si 3 X 8 , and Si 4 X 10 . 2. The process according to claim 1 , wherein the at least one tertiary phosphine is at least one selected from the group consisting of a tertiary alkylphosphine, a tertiary arylphosphine, and a tertiary bidentate phosphine. 3. The process according to claim 2 , wherein the at least one tertiary phosphine is at least one selected from the group consisting of trimethylphosphine, triethylphosphine, and triphenylphosphine. 4. The process according to claim 1 , wherein the at least one halosilane is a linear silane. 5. The process according to claim 1 , further comprising: hydrogenating the at least one higher halosilane, thereby obtaining the at least one higher hydridosilane of formula Si m H 2m+2 . 6. The process according to claim 5 , further comprising: removing the at least one lower halosilane from the product mixture prior to the hydrogenating. 7. The process according to claim 5 , wherein the hydrogenating is effected by adding at least one hydrogenating agent selected from the group consisting of a metal hydride of a metal of main groups 1 to 3 and a hydridic compound comprising LiAlH 4 , NaBH 4 , or iBu 2 AlH. 8. The process according to claim 7 , wherein the hydrogenating agent is present in a 2- to 30-fold molar excess of the at least one halosilane added. 9. The process according to claim 6 , wherein the removing is distillative removing or drawing off at a temperature of from −30 to +100° C. and a pressure of from 0.01 to 1013 mbar prior to the hydrogenating. 10. The process according to claim 8 , wherein the hydrogenating agent is present in a 10- to 15-fold molar excess of the at least one halosilane added. 11. A method for producing at least one higher halosilane, comprising: producing the at least one higher halosilane with at least one tertiary phosphine. 12. The method according to claim 11 , wherein the at least one tertiary phosphine is at least one selected from the group consisting of a tertiary alkylphosphine, a tertiary arylphosphine, and a tertiary bidentate phosphine. 13. The process according to claim 1 , which is conducted at room temperature.

Assignees

Inventors

Classifications

  • Halogenated silanes obtained by disproportionation and molecular rearrangement of halogenated silanes · CPC title

  • Phosphines or phosphonium compounds, i.e. phosphorus bonded to at least one carbon atom, including e.g. sp2-hybridised phosphorus compounds such as phosphabenzene, the other atoms bonded to phosphorus being either carbon or hydrogen · CPC title

  • C01B33/04Primary

    Hydrides of silicon · CPC title

  • Preparation (chemical coating from the vapour phase C23C16/00) · CPC title

  • Halogenated silanes · CPC title

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What does patent US9745200B2 cover?
The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process d…
Who is the assignee on this patent?
Wieber Stephan, Patz Matthias, Stueger Harald, and 2 more
What technology area does this patent fall under?
Primary CPC classification C01B33/10773. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 29 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).