Semiconductor photodetector

Patent metadata

Field	Value
Publication number	US-9743026-B2
Application number	US-201514740113-A
Country	US
Kind code	B2
Filing date	Jun 15, 2015
Priority date	Dec 18, 2012
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.

First claim

What is claimed is:

1. A semiconductor photodetector comprising:
at least one unit pixel including:
a photoelectric conversion part having a charge multiplication region in which incident light is converted into a charge and the charge is multiplied by avalanche multiplication;
a charge storage part connected to the photoelectric conversion part and configured to store a signal charge from the photoelectric conversion part; and
a detection circuit connected to the charge storage part, configured to convert the signal charge stored in the charge storage part into a voltage, and configured to pass the voltage through an amplifier to amplify the voltage and output the amplified voltage,

wherein the photoelectric conversion part includes:
a semiconductor layer having a first surface located on a place where incident light enters and a second surface opposite to the first surface;
a first semiconductor part formed on the first surface of the semiconductor layer;
a second semiconductor part formed on a part of the second surface of the semiconductor layer;
a third semiconductor part formed inside the semiconductor layer and at a position which overlaps, in a plan view, the second semiconductor part;
a fourth semiconductor part formed on the second surface of the semiconductor layer and in an area in which the second semiconductor part is not formed, the fourth semiconductor part having at least one of an impurity concentration different from that of the second semiconductor part and a conductive type different from that of the second semiconductor part;
a first electrode disposed on the first surface of the semiconductor layer, and electrically connected to the first semiconductor part; and
a second electrode disposed on the second surface of the semiconductor layer, and electrically connected to the second semiconductor part, and
wherein the semiconductor layer, the first semiconductor part, and third semiconductor part are of a first conductive type,
the second semiconductor part and the fourth semiconductor part are of a second conductive type different from the first conductive type, and
the second semiconductor part has the impurity concentration higher than the impurity concentration of the fourth semiconductor part.

2. The semiconductor photodetector of claim 1 , comprising a plurality of the unit pixels arranged in a matrix.

3. The semiconductor photodetector of claim 1 , wherein the charge which causes the avalanche multiplication is any one of an electron and a hole.

4. The semiconductor photodetector of claim 1 , wherein the avalanche multiplication caused in the photoelectric conversion part operates in a linear mode.

5. The semiconductor photodetector of claim 1 , wherein the photoelectric conversion part is provided in a layer different from a layer in which the detection circuit is provided.

6. The semiconductor photodetector of claim 1 , wherein the impurity concentration of the second semiconductor part is not lower than 10 times and not higher than 10 4 times of the impurity concentration of the fourth semiconductor part.

7. The semiconductor photodetector of claim 1 , wherein the third semiconductor part is disposed not to overlap, in a plan view, the fourth semiconductor part.

8. The semiconductor photodetector of claim 1 , wherein the third semiconductor part has an impurity concentration higher than an impurity concentration of the semiconductor layer.

9. The semiconductor photodetector of claim 1 , wherein the semiconductor layer is made of a silicon epitaxial growth layer.

10. The semiconductor photodetector of claim 1 , further comprising:
a noise suppression circuit connected to the charge storage part and configured to reduce noise generated in the charge storage part.

11. The semiconductor photodetector of claim 10 , wherein the noise suppression circuit comprises:
a reset transistor connected to the amplifier so as to reset the charge storage part; and
a reset circuit configured to output a reset pulse signal to the reset transistor.

12. The semiconductor photodetector of claim 11 , further comprising, in a rear stage of the amplifier:
a comparator; and
a counter.

13. The semiconductor photodetector of claim 12 , wherein the reset circuit carries out a reset action based on an output signal of the comparator.

14. The semiconductor photodetector of claim 11 , wherein the semiconductor photodetector performs:
an first reset operation in which an output signal from the amplifier is read out in a first period, and the charge storage part is reset at the same time at which the first period ends; and
a second reset operation in which the charge storage part is repeatedly reset at intervals shorter than the first period, and the repeated reset is halted for a predetermined period after a photon enters.

15. The semiconductor photodetector of claim 12 , wherein the reset circuit repeatedly outputs the reset pulse signal to the reset transistor in a period when the reset circuit does not receive the signal from the comparator.

16. The semiconductor photodetector of claim 12 , wherein the reset circuit stops outputting the reset pulse signal to the reset transistor in a period when the reset circuit receives the signal from the comparator.

17. The semiconductor photodetector of claim 12 , wherein the reset circuit starts to output the reset pulse signal to the reset transistor at the same time when the reset circuit receives the signal from the counter.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Usuda Manabu
• Hirose Yutaka
• Kato Yoshihisa
• Teranishi Nobukazu

Classifications

• G01J1/44 Primary

  Electric circuits {(for command of an exposure part G03B7/02)} · CPC title

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H04N25/63

  applied to dark current · CPC title

• H04N5/357

  Electricity · mapped topic

• H01L27/14634

  Electricity · mapped topic