System and method for driving radio frequency switch

Patent metadata

Field	Value
Publication number	US-9742400-B2
Application number	US-201514705518-A
Country	US
Kind code	B2
Filing date	May 6, 2015
Priority date	May 6, 2015
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells comprising a load path and a control node, a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells, and an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver. Each of the plurality of series connected RF switch cells includes a switch transistor.

First claim

What is claimed is:

1. A radio frequency (RF) switching circuit comprising:
a plurality of series connected RF switch cells comprising a load path and a control node, wherein each of the plurality of series connected RF switch cells comprises a switch transistor and
an impedance element, wherein an impedance of the impedance element decreases from a first RF switch cell at a first end of the plurality of series connected RF switch cells to a last RF switch cell at a second end of the plurality of series connected RF switch cells, the plurality of series RF connected switch cells comprises a first terminal coupled to a load path of the first RF switch cell at the first end of the plurality of series connected RF switch cells, and a second terminal coupled to a load path of the last RF switch cell at the second end of the plurality of series connected RF switch cells, the impedance element of each RF switch cell-comprises a parallel capacitor coupled in parallel with the load path of the switch transistor of the RF switch cell, and a capacitance of the parallel capacitor of the first RF switch cell is greater than a capacitance of the parallel capacitor of the last RF switch cell, the impedance element of each RF switch cell-comprises a parallel capacitor coupled in parallel with the load path of the switch transistor of the RF switch cell, and a capacitance of the parallel capacitor of the first RF switch cell is greater than a capacitance of the parallel capacitor of the last RF switch cell;
a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells; and
an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver.

2. The RF switching circuit of claim 1 , wherein each RF switch cell further comprises a load path resistor coupled in parallel with the load path of the RF switch cell.

3. The RF switching circuit of claim 1 , wherein the first end of the input resistor is coupled to the control node of the first RF switch cell.

4. The RF switching circuit of claim 1 , wherein the first end of the input resistor is coupled to a control node of an intermediate RF switch cell, wherein an equal number of RF switch cells are coupled between the intermediate RF switch cell and the first terminal, and between the intermediate RF switch cell and the second terminal.

5. The RF switching circuit of claim 4 , wherein the impedance element of each RF switch cell comprises a second gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the control node of the RF switch cell.

6. The RF switching circuit of claim 5 , wherein at least a portion of the second gate resistors of the plurality of RF switch cells and at least a portion the plurality of first gate resistors form an R-2R ladder.

7. The RF switching circuit of claim 6 , wherein:
each RF switch cell further comprises a load path resistor coupled in parallel with the load path of the RF switch cell; and
the RF switching circuit further comprising a ground resistor coupled between a load path of one of the RF switch cells and ground.

8. The RF switching circuit of claim 1 , wherein the parallel capacitor comprises a metal-insulator-metal (MIM) capacitor.

9. The RF switching circuit of claim 1 , wherein the capacitance of the parallel capacitor linearly decreases from the first RF switch cell to the last RF switch cell.

10. A radio frequency (RF) switching circuit comprising:
a first plurality of series connected resistors;
a second plurality of shunt resistors having first ends coupled between resistors of the first plurality of series connected resistors;
an input coupling resistor having a first end coupled to a center tap of the first plurality of series connected resistors;
a plurality of series connected transistors coupled between a first RF switch terminal and a second RF switch terminal, each of the plurality of series connected transistors having control nodes coupled to respective ends of the second plurality of shunt resistors, wherein
a resistance of each of the first plurality of series connected resistors successively decreases from the center tap toward an end of the first plurality of series connected resistors; and
a resistance of each of the second plurality of shunt resistors successively decreases from a first shunt resistor of the second plurality of shunt resistors coupled to the center tap to a first transistor coupled to the first RF switch terminal and successively decreases from the first shunt resistor of the second plurality of shunt resistors coupled to the center tap to a last transistor coupled to the second RF switch terminal.

11. The RF switching circuit of claim 10 , further comprising a third plurality of resistors coupled in parallel to a corresponding load path of each of the plurality of series connected transistors.

12. The RF switching circuit of claim 11 , further comprising a bias resistor having a first end coupled to one of the plurality of series connected transistors and a second end coupled to a reference voltage node.

13. The RF switching circuit of claim 10 , wherein the first plurality of series connected resistors and the second plurality of shunt resistors form an R-2R ladder.

14. The RF switching circuit of claim 10 , wherein:
a first shut resistor coupled between the center tap and a center transistor of the plurality of series connected transistors comprises a first resistance;
series resistors of the first plurality of series connected resistors coupled to the center tap comprise a resistance of about one-half the first resistance;
succeeding series resistors of the first plurality of series connected resistors immediately adjacent to preceding series resistors comprise a resistance of about one-half of the preceding series resistors;
shunt resistors of the second plurality of shunt resistors immediately adjacent to the first shunt resistor comprises a resistance of about one-half the first resistance; and
succeeding shunt resistors of the second plurality of shunt resistors immediately adjacent to preceding shunt resistors comprise a resistance of about one-half of the preceding shunt resistors.

15. The RF switching circuit of claim 10 , wherein:
a first shut resistor coupled between the center tap and a center transistor of the plurality of series connected transistors comprises a first resistance;
series resistors of the first plurality of series connected resistors coupled to the center tap comprise a second resistance;
succeeding series resistors of the first plurality connected of series resistors immediately adjacent to preceding series resistors comprise a resistance of about one-half of the preceding series resistors;
shunt resistors of the second plurality of shunt resistors immediately adjacent to the first shunt resistor comprise the second resistance; and
succeeding shunt resistors of the second plurality of shunt resistors immediately adjacent to preceding shunt resistors comprise a resistance of about one-half of the preceding shunt resistors.

16. The RF switching circuit of claim 15 , further comprising:
a third plurality of resistors coupled in parallel to a corresponding load path of each of the plurality of series connected transistors; and
a bias resistor having a first end coupled to one of the plurality of series connected transistors and an second end coupled to a reference voltage node.

17. The RF switching circuit of claim 16 , wherein:
the input cou

Assignees

• Infineon Technologies Ag

Inventors

• Bakalski Winfried
• Steltenpohl Anton
• Taddiken Hans

Classifications

• H03K17/693 Primary

  Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors (logic circuits H03K19/00; code converters H03M5/00, H03M7/00) · CPC title

• H04B1/44

  Transmit/receive switching · CPC title

• H03K17/6871 Primary

  the output circuit comprising more than one controlled field-effect transistor · CPC title