Semiconductor device
US-2024128187-A1 · Apr 18, 2024 · US
Silicon-controlled rectifier and an ESD clamp circuit
US9741704B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9741704-B2 |
| Application number | US-201615343099-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 3, 2016 |
| Priority date | Jul 7, 2015 |
| Publication date | Aug 22, 2017 |
| Grant date | Aug 22, 2017 |
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Abstract
Official abstract text for this publication.
A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.
First claim
Opening claim text (preview).
What is claimed is: 1. An electrostatic discharge (ESD) clamp circuit, comprising: n stacking SCRs in a sequence from a first SCR to an n-th SCR; and (n−1) shunt resistors, being associated and in parallel with (n−1) SCRs, respectively, in a sequence from the second to the n-th SCR; wherein resistances of the (n−1) shunt resistors monotonically decrease from a shunt resistor associated with the second SCR to a shunt resistor associated with the n-th SCR. 2. The circuit of claim 1 , wherein resistance of a shunt resistor with a given sequence number should preferably be greater than sum of resistances of shunt resistors with sequence numbers higher than the given sequence number. 3. The circuit of claim 1 , wherein the n stacking SCRs comprise lateral SCR (LSCR), modified lateral SCR (MLSCR), or low-voltage triggering SCR (LVTSCR). 4. The circuit of claim 1 , wherein the second SCR to the n-th SCR comprise MLSCR or LVTSCR.
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9741704B2 cover?
- A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.
- Who is the assignee on this patent?
- Univ Nat Chiao Tung, Himax Tech Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L27/0248. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 22 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).