High aspect ratio structure analysis

Patent metadata

Field	Value
Publication number	US-9741536-B2
Application number	US-201314433354-A
Country	US
Kind code	B2
Filing date	Oct 4, 2013
Priority date	Oct 5, 2012
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

Curtaining artifacts on high aspect ratio features are reduced by reducing the distance between a protective layer and feature of interest. For example, the ion beam can mill at an angle to the work piece surface to create a sloped surface. A protective layer is deposited onto the sloped surface, and the ion beam mills through the protective layer to expose the feature of interest for analysis. The sloped mill positions the protective layer close to the feature of interest to reduce curtaining.

First claim

We claim as follows:

1. A method of exposing a region of interest on a work piece using a charged particle beam, comprising:
ion beam milling a trench at an oblique first angle to a top first surface of the work piece to expose a second surface adjacent to the region of interest that forms an oblique second angle with the first surface;
depositing a protective layer on a portion of the second surface;
exposing a cross section of the region of interest below the protective layer by ion beam milling through the protective layer and the portion of the second surface at a third angle substantially normal to the first surface; and
observing the region of interest by charged particle beam imaging the cross section.

2. The method of claim 1 in which milling a trench at a non-normal first angle to the first surface includes milling a trench in a region of the work piece having multiple high aspect ratio features.

3. The method of claim 2 in which the multiple high aspect ratio features are holes.

4. The method of claim 3 in which depositing a protective layer on a portion of the second surface of interest includes milling the trench through the high aspect ratio holes and covering the holes with the protective layer.

5. The method of claim 1 further comprising performing a subsequent milling step substantially normal to the first surface to expose a second cross section of the region of interest and viewing the second cross section using charged particle beam imaging.

6. The method of claim 1 further comprising performing multiple subsequent milling steps to sequentially expose additional cross sections of the region of interest and viewing each of the additional cross sections using charged particle beam imaging.

7. The method of claim 1 in which a wall of the trench comprises the second surface and forms a fourth angle of between 5° and 50° with a normal to the first surface.

8. The method of claim 7 in which the fourth angle is in a range of from about 18° to about 22°.

9. The method of claim 1 in which depositing a protective layer on a portion of the second surface includes using beam-induced deposition.

10. The method of claim 9 in which using beam-induced deposition comprises electron-beam induced deposition using electrons having energies greater than 10 keV.

11. The method of claim 10 in which using electron beam-induced deposition comprises electron-beam induced deposition using electrons having energies greater than 20 keV.

12. The method of claim 1 in which depositing a protective layer on a portion of the second surface comprises depositing using a protective layer using laser-induced deposition or ion beam induced deposition.

13. The method of claim 1 in which the region of interest includes a portion of a 3D NAND structure or 3D DRAM structures.

14. A method of exposing a cross section of a portion of a high aspect ratio feature of a sample for observation, comprising:
milling using a focused ion beam a trench at a non-normal angle to a first surface of the sample and at a non-normal angle to the long axis of the high aspect ratio feature to expose a planar second surface that is oblique to the first surface;
depositing a protective layer on the planar second surface at a selected depth of the high aspect ratio feature;
milling, using the focused ion beam, a cross section through the protective layer and substantially normal to the first surface to expose a cross section of the high aspect ratio feature; and
observing the exposed cross section.

15. The method of claim 14 in which observing the exposed cross section includes scanning electron microscopy, x-ray analysis, or micro-Raman methods.

16. The method of claim 14 further comprising milling a second cross section through the protective layer parallel to the first cross section to expose a second cross section of the high aspect ratio feature.

17. The method of claim 14 further comprising sequentially milling using the focused ion beam a cross section through the protective layer and observing the exposed cross section using an electron beam to form a series of cross sectional images of the high aspect ratio feature.

18. The method of claim 14 in which depositing a protective layer comprises using electron beam-induced deposition with electrons having energies greater than 15 keV.

19. The method of claim 14 in which depositing a protective layer on the face comprises depositing a protective layer on the face using beam-induced deposition.

20. A method of analyzing a region of interest below a first surface of a work piece, comprising:
directing an ion beam toward the work piece to remove material between the first surface of the work piece and a region of interest to produce a planar second surface that is oblique to the first surface, a portion of the second surface being between the region of interest and the position of the first surface;
depositing a protective layer onto the second surface;
directing the ion beam to mill through the protective layer to produce a third surface for analysis, the third surface passing through the region of interest; and
observing the region of interest by charged particle beam imaging, the protective layer on the second surface being sufficiently close to the region of interest so that the region of interest is exposed for observation without curtaining.

21. The method of claim 20 in which the third surface is substantially orthogonal to the first surface.

22. The method of claim 21 in which the second surface is tilted with respect to a normal to the first surface at an angle between 5° and 50°.

23. The method of claim 22 in which the second surface is tilted with respect to a normal to the first surface at an angle between about 18° to about 22°.

24. A system for observing a cross section of a region of interest in a sample, comprising:
an ion optical column for providing a focused beam of ions;
an electron optical column for providing a focused beam of electrons;
a particle detector for detecting secondary particles emitted from the sample; and
a controller communicating to a computer memory, the computer memory storing instructions for:
milling a trench into an outer first surface of the sample to expose a planar second surface that is adjacent to the region of interest and oblique to the first surface;
depositing a protective layer on a portion of the second surface adjacent to the region of interest;
milling a portion of the second surface through the protective layer adjacent to the region of interest to expose the region of interest; and
observing the region of interest by charged particle beam imaging.

25. The system of claim 24 in which the computer memory stores instructions for causing the electron beam to provide electrons having energies greater than 20 keV to deposit the protective layer by electron-beam-induced deposition.

Assignees

• Fei Co

Inventors

• Lee Sang Hoon
• Stone Stacey
• Blackwood Jeffrey
• Schmidt Michael

Classifications

• H01J2237/31745

  for preparing specimen to be viewed in microscopes or analyzed in microanalysers · CPC title

• H01J37/3178

  for applying thin layers on objects · CPC title

• H01J37/28

  with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title

• C23C14/46

  by ion beam produced by an external ion source · CPC title

• H01J2237/3174

  Etching microareas · CPC title