Monitoring device, ion implantation device, and monitoring method

Patent metadata

Field	Value
Publication number	US-9741534-B2
Application number	US-201615003311-A
Country	US
Kind code	B2
Filing date	Jan 21, 2016
Priority date	Jan 27, 2015
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

A monitoring device includes a filtering section that extracts and outputs at least one of a high frequency component or a low frequency component of a beam current received from a detection output section of an ion implantation device; and a computation section that computes at least one of a value corresponding to a content ratio of the high frequency component in the beam current, or a value corresponding to a content ratio of the low frequency component in the beam current.

First claim

What is claimed is:

1. A monitoring device comprising:
a filtering section that extracts and outputs at least one of a high frequency component or a low frequency component of a beam current received from a detection output section of an ion implantation device; and
a computation section that determines at least one of a value corresponding to a content ratio of the high frequency component in the beam current, or a value corresponding to a content ratio of the low frequency component in the beam current.

2. The monitoring device of claim 1 , wherein:
the filtering section outputs the high frequency component and the low frequency component as an analog signal;
the monitoring device further comprises an A/D converter that converts the analog signal into a digital signal; and
the computation section determines the value using the digital signal, and causes the determined value to be displayed on a display section.

3. The monitoring device of claim 1 , further comprising a control section that controls the ion implantation device such that the ion beam is suppressed in cases in which the value determined by the computation section has exceeded a threshold value.

4. An ion implantation system comprising:
the monitoring device and the ion implantation device of claim 1 ,
wherein the ion implantation device comprises
an irradiation generation section that generates and irradiates the ion beam; and
the detection output section, which detects the beam current due to the ion beam irradiated by the irradiation generation section and outputs the beam current to the monitoring device.

5. The ion implantation system of claim 4 , configured to perform batch processing.

6. The monitoring device of claim 1 , wherein the filtering section outputs the high frequency component and the low frequency component as an analog signal.

7. The monitoring device of claim 1 , further comprising an A/D converter that converts the high frequency component and the low frequency component into a digital signal.

8. The monitoring device of claim 1 , wherein the computation section determines the value based on a digital representation of the high frequency component and the low frequency component, and causes the determined value to be displayed on a display.

9. A monitoring method comprising:
extracting and outputting at least one of a high frequency component or a low frequency component of a beam current received from a detection output section of an ion implantation device; and
determining at least one of a value corresponding to a content ratio of the high frequency component in the beam current, or a value corresponding to a content ratio of the low frequency component in the beam current.

Assignees

• Lapis Semiconductor Co Ltd

Inventors

• Ishida Makoto

Classifications

• H01J37/304 Primary

  Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals · CPC title

• H01J37/3171

  for ion implantation · CPC title

• G01R19/0061

  Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas · CPC title

• H01J2237/30472

  Controlling the beam · CPC title

• H01J2237/31703

  Dosimetry · CPC title