Dynamically controlling an operation execution time for a storage device

Patent metadata

Field	Value
Publication number	US-9741436-B2
Application number	US-83358910-A
Country	US
Kind code	B2
Filing date	Jul 9, 2010
Priority date	Jul 9, 2010
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

In general, this disclosure is directed to techniques for adjusting the timing of operations for a storage device. According to one aspect of the disclosure, a method includes receiving, with at least one device, a workload indicator. The method further includes adjusting, with the at least one device, an operation execution time for the storage device responsive to at least the workload indicator. In some examples, the workload indicator may include a host demand indicator. In additional examples, the workload indicator may include a resource utilization indicator. In further examples, the operation execution time may be one of a write operation execution time or a read operation execution time.

First claim

The invention claimed is:

1. A method comprising:
obtaining, via a controller of a storage drive, a workload indicator; and
reducing wear for a solid state storage device of the storage drive by adjusting, via the controller, an operation execution speed for the solid state storage device responsive to at least the workload indicator, wherein adjusting the operation execution speed comprises adjusting a write operation timing parameter.

2. The method of claim 1 , wherein the workload indicator comprises a host demand indicator.

3. The method of claim 1 , wherein the workload indicator comprises a resource utilization indicator.

4. The method of claim 1 , wherein the write operation timing parameter comprises a program operation timing parameter.

5. The method of claim 1 , wherein the write operation timing parameter comprises an erase operation timing parameter.

6. The method of claim 1 , wherein the write operation timing parameter comprises a voltage level parameter defining an amplitude for at least one of a programming voltage pulse and an erase voltage pulse.

7. The method of claim 1 , wherein the write operation timing parameter comprises a pulse duration parameter defining a pulse duration for at least one of a programming voltage pulse and an erase voltage pulse.

8. The method of claim 1 , wherein the write operation timing parameter comprises a number of pulses parameter defining at least one of a number of programming pulses used in a programming pulse sequence and a number of erase pulses used in an erase pulse sequence.

9. The method of claim 1 , wherein the workload indicator is obtained from a device external to the storage drive.

10. The method of claim 1 , wherein the solid state storage device comprises a NAND flash storage device.

11. The method of claim 1 , wherein adjusting the operation execution speed for a solid state storage device responsive to at least the workload indicator comprises using a longer program time in response to a relatively slow host demand.

12. The method of claim 1 , wherein the workload indicator comprises a priority level associated with an operation comprising at least one of a user data operation, a metadata operation, and a garbage collection operation.

13. A storage drive comprising:
a solid state storage device;
a controller configured to obtain a workload indicator, and reduce wear on the storage device by adjusting an operation execution speed for the storage device responsive to at least the workload indicator, wherein adjusting the operation execution speed comprises adjusting a write operation timing parameter.

14. The storage drive of claim 13 , wherein the workload indicator comprises a host demand indicator.

15. The storage drive of claim 13 , wherein the workload indicator comprises a resource utilization indicator.

16. The storage drive of claim 13 , wherein the write operation timing parameter comprises a program operation timing parameter.

17. The storage drive of claim 13 , wherein the write operation timing parameter comprises an erase operation timing parameter.

18. The storage drive of claim 13 , wherein the write operation timing parameter comprises at least one of a voltage level parameter defining an amplitude for a programming voltage pulse, a voltage level parameter defining an amplitude for an erase voltage pulse, a pulse duration parameter defining a pulse duration for a programming voltage pulse, a pulse duration parameter defining a pulse duration for an erase voltage pulse, a number of pulses parameter defining a number of programming pulses used in a programming pulse sequence, and a number of pulses parameter defining a number of erase pulses used in an erase pulse sequence.

19. The storage drive of claim 13 , wherein the storage device comprises a NAND flash storage device.

20. A non-transitory computer-readable storage medium comprising instructions that cause one or more processors of a storage drive to:
obtain a workload indicator; and
reduce wear on a solid state storage device of the storage device by adjusting an operation execution speed for the solid state storage device responsive to at least the workload indicator, wherein adjusting the operation execution speed comprises adjusting a write operation timing parameter.

Assignees

• Goss Ryan J
• Gomez Kevin A
• Gaertner Mark A
• Seagate Technology Llc

Inventors

• Goss Ryan J
• Gomez Kevin A
• Gaertner Mark A

Classifications

• G11C16/10 Primary

  Programming or data input circuits · CPC title

• G06F12/0246

  in block erasable memory, e.g. flash memory · CPC title