Write apparatus and magnetic memory

Patent metadata

Field	Value
Publication number	US-9741418-B2
Application number	US-201615333235-A
Country	US
Kind code	B2
Filing date	Oct 25, 2016
Priority date	Apr 25, 2014
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

A write apparatus and a magnetic memory, where the write apparatus includes a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer. A first area locates between the first information storage area and the information buffer. A second area locates between the second information storage area and the information buffer. The first information storage area, the second information storage area, and the information buffer are made of a first magnetic material. The first area and the second area are made of a second magnetic material. Magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material. The write apparatus can ensure write stability of the magnetic memory.

First claim

What is claimed is:

1. A write apparatus configured to perform a write operation for a magnetic memory that stores information using a magnetic domain, wherein the apparatus comprises:
a first drive port;
a second drive port;
a first information storage area;
a second information storage area; and
an information buffer,
wherein one end of the first drive port is connected to the first information storage area,
wherein the other end of the first drive port is configured to connect to a power supply,
wherein one end of the second drive port is connected to the second information storage area,
wherein the other end of the second drive port is configured to connect to the power supply,
wherein a first area locates between the first information storage area and the information buffer,
wherein a second area locates between the second information storage area and the information buffer,
wherein the first information storage area, the second information storage area, and the information buffer are made of a first magnetic material,
wherein the first area and the second area are made of a second magnetic material,
wherein the first magnetic material is different from the second magnetic material,
wherein magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material,
wherein the first information storage area is configured to write first data to the information buffer when the first drive port is driven by the power supply,
wherein the first data is represented by an electron set having a first spin direction,
wherein the second information storage area is configured to write second data to the information buffer when the second drive port is driven by the power supply,
wherein the second data is represented by an electron set having a second spin direction,
wherein the first spin direction is reverse to the second spin direction,
wherein the information buffer is configured to buffer data written from the first information storage area or the second information storage area, and
wherein the buffered data is written to a magnetic domain of the magnetic memory.

2. The write apparatus according to claim 1 , wherein the first magnetic material is at least one of iron, cobalt, or nickel, and wherein the second magnetic material is at least one of iron, cobalt, or nickel.

3. The write apparatus according to claim 1 , wherein an angle between the information buffer and the first information storage area is an obtuse angle, a straight angle, or an acute angle, and wherein an angle between the information buffer and the second information storage area is an obtuse angle, a straight angle, or an acute angle.

4. A magnetic memory, comprising:
a magnetic storage orbit, comprising multiple magnetic domains, wherein the multiple magnetic domains are configured to record data written by a first write apparatus,
wherein the first write apparatus is configured to write data to the multiple magnetic domains of the magnetic storage orbit,
wherein the first write apparatus, comprises:
a first drive port;
a second drive port;
a first information storage area;
a second information storage area; and
an information buffer,
wherein one end of the first drive port is connected to the first information storage area,
wherein the other end of the first drive port is configured to connect to a power supply,
wherein one end of the second drive port is connected to the second information storage area,
wherein the other end of the second drive port is configured to connect to the power supply,
wherein a first area locates between the first information storage area and the information buffer,
wherein a second area locates between the second information storage area and the information buffer,
wherein the first information storage area, the second information storage area, and the information buffer are made of a first magnetic material,
wherein the first area and the second area are made of a second magnetic material,
wherein the first magnetic material is different from the second magnetic material, and
wherein magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material.

5. The magnetic memory according to claim 4 , wherein the first information storage area is configured to write first data to the information buffer when the first drive port is driven by the power supply, wherein the first data is represented by an electron set having a first spin direction, wherein the second information storage area is configured to write second data to the information buffer when the second drive port is driven by the power supply, wherein the second data is represented by an electron set having a second spin direction, wherein the first spin direction is reverse to the second spin direction, wherein the information buffer is configured to buffer data written from the first information storage area, and wherein the buffered data is written to the multiple magnetic domains of the magnetic storage orbit.

6. The magnetic memory according to claim 4 , wherein the first information storage area is configured to write first data to the information buffer when the first drive port is driven by the power supply, wherein the first data is represented by an electron set having a first spin direction, wherein the second information storage area is configured to write second data to the information buffer when the second drive port is driven by the power supply, wherein the second data is represented by an electron set having a second spin direction, wherein the first spin direction is reverse to the second spin direction, wherein the information buffer is configured to buffer data written from the second information storage area, and wherein the buffered data is written to the multiple magnetic domains of the magnetic storage orbit.

7. The magnetic memory according to claim 4 , wherein the information buffer of the first write apparatus has a size same as that of a magnetic domain in the magnetic storage orbit, wherein the information buffer of the first write apparatus is disposed between two adjacent magnetic domain walls of the magnetic storage orbit, and wherein a data write direction of the information buffer perpendicularly fits a magnetic domain movement direction of the magnetic storage orbit.

8. The magnetic memory according to claim 7 , wherein the data write direction of the information buffer of the first write apparatus is a Y-axis direction when the magnetic domain movement direction of the magnetic storage orbit is an X-axis direction, and wherein the X-axis and the Y-axis are perpendicular to each other in a horizontal direction.

9. The magnetic memory according to claim 7 , wherein the data write direction of the information buffer of the first write apparatus is a Z-axis direction when the magnetic domain movement direction of the magnetic storage orbit is an X-axis direction, and wherein the X-axis and the Z-axis are perpendicular to each other in a vertical direction.

10. The magnetic memory according to claim 4 , wherein the magnetic storage orbit is a U-shaped orbit, wherein the information buffer of the first write apparatus is disposed between two adjacent magnetic domain walls of a bottom orbit of the magnetic storage orbit, and wherein each of the magnetic domain walls is configured to separate two adjacent magnetic domains.

11. The magnetic memory according to claim 4 , further comprising a second write apparatus, wherein the first write apparatus and the second write apparatus are disposed in parallel along a direction of the magnetic storage orbit.

12. The magnetic mem

Assignees

• Huawei Tech Co Ltd

Inventors

• Fu Yarong
• Zhao Junfeng
• Wang Yuangang
• Yang Wei
• Lin Yinyin
• Yang Kai

Classifications

• G11C11/1675 Primary

  Writing or programming circuits or methods · CPC title

• G11B5/653

  containing Fe or Ni (containing Co G11B5/656; containing inorganic, non-oxide compounds of Si, N, P, B, H or C G11B5/657; containing oxygen G11B5/658) · CPC title

• G11B5/012 Primary

  Recording on, or reproducing or erasing from, magnetic disks (G11B17/00, G11B19/00 take precedence) · CPC title

• G11C11/16

  using elements in which the storage effect is based on magnetic spin effect · CPC title

• G11B5/656

  containing Co (containing inorganic, non-oxide compounds of Si, N, P, B, H or C G11B5/657; containing oxygen G11B5/658) · CPC title