Method for fabrication of a silicon-based component with at least one optical illusion pattern

Patent metadata

Field	Value
Publication number	US-9740174-B2
Application number	US-201615339249-A
Country	US
Kind code	B2
Filing date	Oct 31, 2016
Priority date	Nov 11, 2015
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

The invention relates to a method for fabrication of a one-piece, silicon-based component of simple shape offering the illusion of faceting and/or chamfering for forming all or part of the exterior part of a timepiece.

First claim

What is claimed is:

1. A method for fabrication of at least one silicon-based component with at least one optical illusion pattern, wherein the method comprises the following steps:
a) forming a substrate comprising a silicon-based layer;
b) etching at least one hole through the thickness of the silicon-based layer to form the contour of the at least one silicon-based component and blind recesses in the thickness of the silicon-based layer to form the at least one silicon-based component with a flat surface comprising the at least one optical illusion pattern making the surface appear not to be flat;
c) releasing the at least one silicon-based component thereby formed from the substrate.

2. The method according to claim 1 , wherein the blind recesses form at least two series of parallel segments, the first series of parallel segments joining the second series of parallel segments at an angle comprised between 10 and 170°, such that the at least one silicon-based component gives the illusion that the flat surface comprises two bevelled surfaces forming an edge.

3. The method according to claim 1 , wherein the blind recesses form at least one series of curved such that the at least one silicon-based component gives the illusion that the flat surface is domed.

4. The method according to claim 1 , wherein the blind recesses form at least one series of recesses arranged symmetrically in relation to each other, the at least one series of recesses being formed adjacent to a portion wherein the flat surface of the at least one silicon-based component has no recess, such that the at least one silicon-based component gives the illusion that the flat surface comprises two bevelled surfaces forming an edge.

5. The method according to claim 1 , wherein the blind recesses are arranged at the periphery of the at least one silicon-based component and form at least two series of parallel segments, the parallel segments of the first series being perpendicular to the parallel segments of the second series and joining at an angle such that the at least one silicon-based component gives the illusion that the flat surface is chamfered.

6. The method according to claim 1 , wherein the blind recesses form at least one series of recesses arranged symmetrically in relation to each other, the at least one series of recesses being bordered by surfaces of the at least one silicon-based component having no recess, such that the at least one silicon-based component gives the illusion that the flat surface is formed in relief with two different materials.

7. The method according to claim 1 , wherein the depth of the blind recesses is comprised between 2 and 100 μm.

8. The method according to claim 1 , wherein, between step b) and step c), the method further comprises the following step:
d) forming at least one through hole in the thickness of the rest of the substrate to form the at least one silicon-based component with a securing means.

9. The method according to claim 1 , wherein the silicon-based layer has a thickness comprised between 50 and 500 μm.

10. The method according to claim 1 , wherein step b) comprises the following phases:
e) forming a mask with openings) on the silicon-based layer, the opening used to form the at least one through hole being wider than those used to form the blind recesses;
f) etching the silicon-based layer, by means of an anisotropic etch, through the openings in the mask;
g) removing the mask.

11. The method according to claim 1 , wherein step b) comprises the following phases:
h) forming a first mask with openings in the shapes of the at least one through hole and of the blind recesses;
i) forming a second mask on the first mask with at least one opening only in the shape of the at least one through hole;
j) partially etching the silicon-based layer, by means of a first anisotropic etch, through the at least one opening in the second mask;
k) removing the second mask;
l) etching the silicon-based layer, by means of a second anisotropic etch, through the openings in the first mask, so as to obtain the at least one through hole and the blind recesses;
m) removing the first mask.

12. The method according to claim 1 , wherein the at least one silicon-based component contains single crystal silicon, doped single crystal silicon, amorphous silicon, porous silicon, polycrystalline silicon, silicon nitride, silicon carbide, quartz or silicon oxide.

13. The method according to claim 1 , wherein several silicon-based components are formed in the same silicon-based layer.

14. The method according to claim 1 , wherein the at least one silicon-based component forms all or part of a dial, an aperture decoration, a flange, a bezel, a push-piece, a crown, a case back cover, a hand, a bracelet or strap, a link, a clasp, a decoration, an oscillating weight or an applique.

Assignees

• Nivarox Far Sa

Inventors

• Cusin Pierre
• Gandelhman Alex
• Musy Michel

Classifications

• G04B45/0015

  Light-, colour-, line- or spot-effects caused by or on stationary parts (change of appearance by exchangeable case parts G04B47/046) · CPC title

• G04B19/042

  Construction and manufacture of the hands; arrangements for increasing reading accuracy (hands with illumination G04B19/305; specially shaped hands, e.g. figures or pictures G04B45/0061; clockwork in the hands G04B45/043; invisible drive of the hands G04B45/046) · CPC title

• B81C1/00015

  for manufacturing microsystems · CPC title

• B44C1/227

  by etching · CPC title

• G04B19/12

  Selection of materials for dials or graduations {markings} · CPC title