Substrate with multilayer reflective film, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and method of manufacturing the same, and method of manufacturing a semiconductor device

Patent metadata

Field	Value
Publication number	US-9740091-B2
Application number	US-201414906288-A
Country	US
Kind code	B2
Filing date	Jul 15, 2014
Priority date	Jul 22, 2013
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.

First claim

The invention claimed is:

1. A substrate with a multilayer reflective film, comprising:
a substrate,
a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated,
a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film, and
a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film,
wherein the surface layer on the other side of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.

2. The substrate with a multilayer reflective film according to claim 1 , wherein the block layer comprises at least one member selected from the group consisting of at least one metal selected from Ti, Al, Ni, Pt, Pd, W, Mo, Co, and Cu, an alloy of the above two or more metals, and a nitride, a silicide, and a silicide nitride thereof.

3. The substrate with a multilayer reflective film according to claim 2 , wherein a gradient region in which the content of the metal component constituting the block layer continually decreases toward the substrate is present between the layer comprising Si, which is the surface layer on the other side of the multilayer reflective film opposite from the substrate, and the block layer.

4. The substrate with a multilayer reflective film according to claim 1 , wherein the low refractive-index material is Mo.

5. The substrate with a multilayer reflective film according to claim 1 , wherein the block layer has a thickness of 0.2 to 2.0 nm.

6. The substrate with a multilayer reflective film according to claim 1 , wherein the block layer comprises at least one member selected from the group consisting of titanium (Ti), a titanium nitride (TiN x (x>0)), a titanium silicide (TiSi x (x>0)), and a titanium silicide nitride (Ti x Si y N z (x>0, y>0, z>0)).

7. A reflective mask blank for EUV lithography, comprising the substrate with a multilayer reflective film according to claim 1 , and an absorber film, formed on the Ru protective film in the substrate with a multilayer reflective film, for absorbing an EUV light.

8. The reflective mask blank for EUV lithography according to claim 7 , further comprising a resist film on the absorber film.

9. A method of manufacturing a reflective mask for EUV lithography, the method comprising a step of patterning an absorber film in the reflective mask blank for EUV lithography according to claim 8 with the resist film to form an absorber film pattern on the Ru protective film.

10. A method of manufacturing a semiconductor device, the method comprising a step of forming a transfer pattern on a semiconductor substrate using a reflective mask for EUV lithography obtained by the method of manufacturing a reflective mask for EUV lithography according to claim 9 .

11. A reflective mask for EUV lithography, the reflective mask comprising the substrate with a multilayer reflective film according to claim 1 , and an absorber film pattern, formed on the Ru protective film in the substrate with a multilayer reflective film, for absorbing an EUV light.

12. A method of manufacturing a semiconductor device, the method comprising a step of forming a transfer pattern on a semiconductor substrate using the reflective mask for EUV lithography according to claim 11 .

13. A method of manufacturing a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer on the other side of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer,
the method comprising:
forming the multilayer reflective film on the substrate;
forming, on the layer comprising Si, which is the surface layer on the other side of the multilayer reflective film opposite from the substrate, a block layer for preventing the migration of Si to the Ru protective film; and
forming the Ru protective film on the block layer,
the method further having the step of, after forming the block layer, subjecting the resultant substrate to heat treatment under temperature conditions wherein at least part of the Si in the multilayer reflective film is diffused into the block layer.

14. A method of manufacturing a reflective mask blank for EUV lithography, comprising a step of forming an absorber film on the Ru protective film in the substrate with a multilayer reflective film obtained by the method of manufacturing the substrate with a multilayer reflective film according to claim 13 .

Assignees

• Hoya Corp

Inventors

• Onoue Takahiro
• Kozakai Hirofumi

Classifications

• G03F1/76

  Patterning of masks by imaging · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F1/24 Primary

  Reflection masks; Preparation thereof · CPC title

• G03F1/48

  Protective coatings · CPC title