Magnetic Sensor Device, Method of Manufacturing the Sensor Device, and Rotational Operation Mechanism
US-2024247932-A1 · Jul 25, 2024 · US
US9739849B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9739849-B2 |
| Application number | US-201514603833-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 23, 2015 |
| Priority date | Jan 31, 2014 |
| Publication date | Aug 22, 2017 |
| Grant date | Aug 22, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A magnetic field detecting device which comprises a magnetic impedance sensor including a magnetic impedance element 1 in which a pulse electrical current or a high frequency electrical current is applied from an oscillator 2 to an amorphous wire 10 and an alternate current or AC damped oscillation voltage, which is induced in a detecting coil 11 wound around the amorphous wire 10 and has a magnitude corresponding to an external magnetic field, is output, and an arbitrary magnetic field is applied to the amorphous wire by means of the magnetic field generated on the detecting coil 11 energized by connecting the detecting coil 11 to a voltage source or to a current source E through an impedance network 3 comprising of a resistor R or a coil L or a condenser C or comprising a combination of the resistor R, the coil L, and the condenser C.
Opening claim text (preview).
What is claimed is: 1. A magnetic field detecting device comprising: a magnetic impedance sensor including a magnetic impedance element in which pulse or high frequency electrical current is applied to an amorphous wire, and an alternate current damped oscillation voltage is induced by a detecting coil wound around said amorphous wire in response to the external magnetic field thereof and is output from said detecting coil; and a decoupling circuit, connected to a circuit between a voltage source or current source and said detecting coil, configured to block the flow of the alternate current damped oscillation voltage to said voltage source or current source and configured to apply the magnetic field to said amorphous wire based on the magnetic field which is induced on said detecting coil energized by said voltage source or current source. 2. The magnetic field detecting device according to claim 1 , wherein said decoupling circuit comprises an impedance network comprising at least one or the combination of a resistor, a coil and a capacitor; and a bias magnetic field is applied to said amorphous wire based on the magnetic field which is induced on said detecting coil energized through said impedance network. 3. A magnetic field detecting device comprising: a magnetic impedance sensor including a magnetic impedance element in which pulse or high frequency electrical current is applied to an amorphous wire, and the alternate current damped oscillation voltage is induced by a detecting coil wound around said amorphous wire in response to the external magnetic field thereof and is output from said detecting coil; a detection circuit configured to convert the alternate current damped oscillation voltage output from said detecting coil to the voltage signal in response to the intensity of the external magnetic field; an amplifier configured to amplify the voltage signal to an amplified voltage signal having a predetermined amplitude; and an impedance network, connected to an output terminal of said amplifier in order to obtain the current and voltage, comprising at least one or the combination of a resistor, a coil and a capacitor, wherein a feedback magnetic field is applied to said amorphous wire based on the magnetic field induced on said detecting coil energized through said impedance network, and the flow of the alternate current damped oscillation voltage output from said detecting coil to said output terminal of said amplifier is blocked by said impedance network. 4. The magnetic field detecting device according to claim 3 , wherein said impedance network is connected to said output terminal of said amplifier through a frequency selective circuit; and the feedback magnetic field selected on the frequency by said frequency selective circuit is applied to said amorphous wire.
Magnetoresistive devices · CPC title
Magneto-impedance sensors; Nanocristallin sensors · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.