Automatic defect detection and classification for high throughput electron channeling contrast imaging

Patent metadata

Field	Value
Publication number	US-9739728-B1
Application number	US-201615187467-A
Country	US
Kind code	B1
Filing date	Jun 20, 2016
Priority date	Jun 20, 2016
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

Imaging and processing techniques are employed to identify crystalline defects obtained by ECCI from surrounding topography and is combined with defect counting and automatic classification.

First claim

What is claimed is:

1. A method for automatic detection and classification of crystalline defects of a crystalline material, said method comprising:
obtaining a first image of a crystalline material utilizing electron channeling contrast imaging (ECCI) under a particular channeling condition;
altering the ECCI conditions to obtain a second image;
distinguishing crystalline defects from other features present in said second image;
tallying the number of said crystalline defects;
processing, using an algorithm, features of said crystalline defects in said second image to determine a defect fingerprint for each of said crystalline defects; and
classifying the defect type of each of said crystalline defects by comparing said defect fingerprint to a library containing images of defect fingerprints of known defect types.

2. The method of claim 1 , wherein said altering said ECCI conditions comprises tilting said crystalline material.

3. The method of claim 1 , wherein said altering said ECCI conditions comprises tilting said crystalline material to a complementary channeling condition.

4. The method of claim 1 , wherein said altering said ECCI conditions comprises changing the accelerating voltage of an electron beam, modifying the optimum channeling conditions.

5. The method of claim 1 , wherein said altering said ECCI conditions comprises changing a detector configuration to collect different finds of complementary signal.

6. The method of claim 1 , wherein said processing comprises generating a line profile and two-dimensional cropped images of said crystalline defect.

7. The method of claim 1 , further comprising:
tallying and storing the number of each type of crystalline defect and the total area scanned; and
determining the number of each type of crystalline defects per unit area of said crystalline material.

8. The method of claim 7 , wherein said tallying comprises counting a number of frames with a specific type of said crystalline defect and without said specific type of crystalline defect.

9. The method of claim 1 , wherein said crystalline material comprises a plurality of patterned structures present on a surface of a substrate, each patterned structure of said plurality of patterned structures is misaligned relative to the known crystallographic angles at least one type of crystalline defect present in each patterned structure.

10. A method for automatic detection of crystalline defects of a crystalline material, said method comprising:
providing a substrate containing a plurality of patterned structures comprising a crystalline material, wherein each of said patterned structure is misaligned relative to at least one type of crystalline defect present in each patterned structure; and
obtaining an image of each patterned structure utilizing electron channeling contrast imaging (ECCI).

11. The method of claim 10 , wherein each patterned structure is a crystalline fin.

12. The method of claim 10 , further comprising:
altering the ECCI conditions to provide second images;
distinguish crystalline defects from other features present in said second images;
tallying the number of said crystalline defects;
processing, using an algorithm, features of said crystalline defects in said second images to determine the defect fingerprint for each of said crystalline defects; and
classifying the defect type of each of said crystalline defects by comparing said defect fingerprint to a library containing images of defect fingerprints of known defect types.

13. The method of claim 12 , wherein said altering said ECCI conditions comprises tilting said crystalline material.

14. The method of claim 12 , wherein said altering said ECCI conditions comprises tilting said crystalline material to a complementary channeling condition.

15. The method of claim 12 , wherein said altering said ECCI conditions comprises changing the accelerating voltage of the electron beam, modifying the optimum channeling conditions.

16. The method of claim 12 , wherein said altering said ECCI conditions comprises changing the detector configuration to collect different finds of complementary signal.

17. The method of claim 12 , wherein said processing comprises generating a line profile and two-dimensional cropped images of said crystalline defect.

18. The method of claim 12 , further comprising:
tallying and storing the number of each type of crystalline defect and the total area scanned; and
determining the number of each type of crystalline defects per unit area of said crystalline material.

19. The method of claim 18 , wherein said tallying comprises counting a number of frames with a specific type of said crystalline defect and without said specific type of said crystalline defect.

Assignees

• IBM

Inventors

• Bedell Stephen W
• Mo Renee T
• Mukherjee Kunal
• Ott John A
• Sadana Devendra K
• Wacaser Brent A

Classifications

• G01N23/203 Primary

  Measuring back scattering · CPC title

• G01N2223/6116

  semiconductor wafer · CPC title

• G01N2223/646

  flaws, defects · CPC title

• G01N2223/401

  image processing · CPC title

• G06T7/0004

  Industrial image inspection · CPC title