Composition for forming a silica based layer, silica based layer, and electronic device
US-2016176718-A1 · Jun 23, 2016 · US
US9738787B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9738787-B2 |
| Application number | US-201314432401-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 16, 2013 |
| Priority date | Dec 27, 2012 |
| Publication date | Aug 22, 2017 |
| Grant date | Aug 22, 2017 |
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Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.
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What is claimed is: 1. A composition for a silica-based insulation layer, the composition comprising: a hydrogenated polysilazane or a hydrogenated polysiloxazane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 in the composition is less than or equal to 1200 ppm. 2. The composition for a silica-based insulation layer of claim 1 , wherein the cyclic compound is selected from cyclic hydrogenated silazane, cyclic hydrogenated siloxazane, and a mixture thereof. 3. The composition for a silica-based insulation layer of claim 1 , wherein the cyclic compound is a compound having a structure selected from one of the following Chemical Formulae 1a to 1f: 4. The composition for a silica-based insulation layer of claim 1 , wherein the hydrogenated polysilazane or the hydrogenated polysiloxazane has a weight average molecular weight of 1,000 to 7,000. 5. The composition for a silica-based insulation layer of claim 1 , wherein a content of the hydrogenated polysilazane or the hydrogenated polysiloxazane in the composition ranges from 0.1 to 50 wt %, based on a total weight of the composition. 6. A method of manufacturing the composition of claim 1 for a silica-based insulation layer, the method comprising: coammonolyzing a halosilane compound to prepare a solution that includes a hydrogenated polysilazane or a hydrogenated polysiloxazane; and substituting a solvent of the solution with a solvent that includes an aromatic hydrocarbon or ether, at 60 to 110° C. 7. A silica-based insulation layer manufactured using the composition for a silica-based insulation layer comprising the hydrogenated polysiloxazane as claimed in claim 1 by: applying the composition for a silica-based insulation layer on a substrate; drying the substrate applied with the composition for a silica-based insulation layer; and curing the resultant under an atmosphere comprising water vapor at a temperature of greater than or equal to 200° C. 8. The silica-based insulation layer of claim 7 , wherein the silica-based insulation layer has a thickness distribution range of less than or equal to 120 nm. 9. A method of manufacturing a silica-based insulation layer, comprising: applying the above-described composition for a silica-based insulation layer as claimed in claim 1 , on a substrate; drying the substrate applied with the composition for a silica-based insulation layer; and curing the resultant under an atmosphere comprising a water vapor at a temperature of of greater than or equal to 200° C.
the material being a silicon oxide, e.g. SiO2 · CPC title
the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title
the compound being a silazane · CPC title
the compound comprising silicon and nitrogen · CPC title
the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title
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