Process for preparing high-purity semi-metal compounds
US-2016326002-A1 · Nov 10, 2016 · US
US9738532B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9738532-B2 |
| Application number | US-201414782247-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2014 |
| Priority date | Apr 24, 2013 |
| Publication date | Aug 22, 2017 |
| Grant date | Aug 22, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.
Opening claim text (preview).
The invention claimed is: 1. A process for preparing a dimeric and/or trimeric silane of the general formula I: wherein n=0 or 1, comprising: i) subjecting a reactant stream comprising monosilane of the general formula II and hydrogen, ii) to a gas discharge, and iii) obtaining the dimeric and/or trimeric silane of the formula I from a resulting phase, and setting a defined ratio of a partial hydrogen pressure to a partial pressure of a silane which is gaseous under a condition selected in the resulting phase; wherein the defined ratio in process step iii) of the partial hydrogen pressure to the partial pressure of the gaseous silanes is set by a hydrogen-permeable membrane. 2. The process according to claim 1 , wherein the pressure in process step iii) is elevated relative to the pressure in process stage ii). 3. The process according to claim 1 , wherein the resulting phase in process step iii) has a pressure of 1 bar ab to 100 bar abs . 4. The process according to claim 1 , wherein the monosilane in process step ii) is subjected to the gas discharge in the presence of hydrogen at a pressure between 0.05 mbar abs and 15,000 mbar abs . 5. The process according to claim 1 , wherein the gas discharge in process step ii) is effected at a pressure between 0.1 mbar abs and 1,000 mbar abs . 6. The process according to claim 1 , wherein the gas discharge in process step ii) is effected at a temperature between −60° C. and 10° C. 7. The process according to claim 1 , wherein the reactant stream has a defined ratio of hydrogen and monosilane in percent by volume (% by vol.) of 15:1 to 1:5. 8. The process according to claim 1 , wherein the reactant stream in step ii) is exposed to a nonthermal plasma. 9. The process according to claim 1 , wherein the membrane is permeable to hydrogen and essentially impermeable to silanes. 10. The process according to claim 1 , wherein said membrane comprises at least one of the following materials: quartz, metal, metallic alloy, ceramic, zeolite, organic polymer and/or a composite membrane having an at least two-layer structure comprising one or more of the aforementioned materials. 11. The process according to claim 1 , wherein the dimeric silane is obtained. 12. The process according to claim 1 , wherein the trimeric silane is obtained. 13. The process according to claim 1 , wherein a mixture of the dimeric and the trimeric silanes is obtained.
Purification · CPC title
Feeding or evacuating the reactor · CPC title
Silicon compounds · CPC title
Processes utilising sub-atmospheric pressure; Apparatus therefor · CPC title
Cold plasma · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.