Process for producing polycrystalline silicon

Patent metadata

Field	Value
Publication number	US-9738531-B2
Application number	US-201415023567-A
Country	US
Kind code	B2
Filing date	Aug 27, 2014
Priority date	Sep 23, 2013
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

Installation of a shield around a Siemens reactor prior to harvesting polysilicon rods produced therein allows the upper, bell jar-like shell to be removed for cleaning, while protecting the polysilicon rods from contamination and increasing safety of nearby personnel. The polysilicon rods are harvested while the shield is present.

First claim

The invention claimed is:

1. A process for producing polycrystalline silicon, comprising introducing a reaction gas comprising a silicon-containing component and hydrogen into a reactor comprising a base plate, an upper reactor section secured to the base plate, heating at least one support body by passage of direct current, and depositing polycrystalline silicon onto the support body such that at least one polycrystalline silicon rod is obtained, wherein, after the deposition has ended, a protective shell is installed laterally around the reactor during the deinstallation of the at least one polycrystalline silicon rod, connections on the upper reactor section are removed, the protective shell is placed laterally around the deposition reactor, and then the upper reactor section is removed in order finally to deinstall the at least one polycrystalline silicon rod, and wherein, after the deposition has ended, the reactor is opened for a period of time before and/or while connections are being removed from the upper reactor section and before the protective shell is installed.

2. The process of claim 1 , wherein, prior to the deinstallation of the at least one polycrystalline silicon rod, the polycrystalline silicon rod is covered with a bag-like plastic component.

3. The process of claim 1 , wherein the at least one support body comprises two silicon rods connected to one another via a horizontal bridge, such that at least one polycrystalline silicon rod pair is deposited.

4. The process of claim 3 , wherein deinstallation of the at least one polycrystalline silicon rod pair is accomplished using an apparatus having dimensions such that the apparatus can completely surround the polycrystalline silicon rod pair, and the apparatus together with the polycrystalline silicon rod pair that it surrounds interacts with a crane, a cable winch or a grab such that the apparatus along with the polycrystalline silicon rod pair is removed from the reactor.

5. The process of claim 1 , wherein the at least one polycrystalline silicon rod is deinstalled and mechanically processed to obtain chunks of polycrystalline silicon.

6. A process for producing polycrystalline silicon, comprising introducing a reaction gas comprising a silicon-containing component and hydrogen into a reactor comprising a base plate, an upper reactor section secured to the base plate, heating at least one support body by passage of direct current and depositing polycrystalline silicon onto the support body such that at least one polycrystalline silicon rod is obtained, wherein, after the deposition has ended, a protective wall is placed laterally around the reactor during deinstallation of the at least one polycrystalline silicon rod, connections on the upper reactor section are removed and protective elements are installed laterally on the upper reactor section, these forming the protective wall, the upper reactor section together with the protective elements is then moved vertically upward until the at least one polycrystalline silicon rod is completely surrounded by the protective elements, the protective elements are then connected to the base plate and the protective elements are released from the upper reactor section and deinstalling the at least one polycrystalline silicon rod, and wherein after deposition has ended, the reactor is opened for a period of time before and/or while connections are being removed from the upper reactor section and before the protective wall is installed.

7. The process of claim 6 , wherein, prior to the deinstallation of the at least one polycrystalline silicon rod, the polycrystalline silicon rod is covered with a bag-like plastic component.

8. The process of claim 6 , wherein the at least one support body comprises two silicon rods connected to one another via a horizontal bridge, such that at least one polycrystalline silicon rod pair is deposited, and wherein deinstallation of the at least one polycrystalline silicon rod pair is accomplished using an apparatus having dimensions such that the apparatus can completely surround the polycrystalline silicon rod pair, and the apparatus together with the polycrystalline silicon rod pair that it surrounds interacts with a crane, a cable winch or a grab such that the apparatus along with the polycrystalline silicon rod pair is removed from the reactor.

9. The process of claim 6 , wherein the at least one polycrystalline silicon rod is deinstalled and mechanically processed to obtain chunks of polycrystalline silicon.

10. A process for producing polycrystalline silicon, comprising introducing a reaction gas comprising a silicon-containing component and hydrogen into a reactor comprising a base plate, an upper reactor section secured to the base plate and heating at least one support body by passage of direct current on which polycrystalline silicon is deposited such that at least one polycrystalline silicon rod is obtained, wherein, after the deposition has ended, a protective wall containing folding doors is installed laterally around the reactor during deinstallation of the at least one polycrystalline silicon rod, connections on the upper reactor section are removed and the protective wall containing folding doors is moved onto the side of the reactor, the reactor being completely surrounded by the protective wall and the folding doors being closed before the removal of the upper reactor section and deinstallation of the at least one polycrystalline silicon rod, and wherein, after the deposition has ended, the reactor is opened for a period of time before and/or while connections are removed from the upper reactor section and before the protective wall is moved onto the reactor.

11. The process of claim 10 , wherein, prior to the deinstallation of the at least one polycrystalline silicon rod, the polycrystalline silicon rod is covered with a bag-like plastic component.

12. The process of claim 10 , wherein the at least one support body comprises two silicon rods connected to one another via a horizontal bridge, such that at least one polycrystalline silicon rod pair is deposited, and wherein deinstallation of the at least one polycrystalline silicon rod pair is accomplished using an apparatus having dimensions such that the apparatus can completely surround the polycrystalline silicon rod pair, and the apparatus together with the polycrystalline silicon rod pair that it surrounds interacts with a crane, a cable winch or a grab such that the apparatus along with the polycrystalline silicon rod pair is removed from the reactor.

13. The process of claim 10 , wherein the at least one polycrystalline silicon rod is deinstalled and mechanically processed to obtain chunks of polycrystalline silicon.

Assignees

• Wacker Chemie Ag

Inventors

• Mueller Barbara
• Haeckl Walter
• Stoiber Wolfgang

Classifications

• C01B33/035 Primary

  by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process · CPC title

• C23C16/24

  Deposition of silicon only · CPC title