Carbide-derived carbon manufactured by using heat treatment at vacuum and method thereof

Patent metadata

Field	Value
Publication number	US-9738523-B2
Application number	US-201414539286-A
Country	US
Kind code	B2
Filing date	Nov 12, 2014
Priority date	Nov 12, 2014
Publication date	Aug 22, 2017
Grant date	Aug 22, 2017

Abstract

Disclosed is a method of preparing a carbide-derived carbon having high ion mobility for use in a lithium battery anode material, a lithium air battery electrode, a supercapacitor electrode, and a flow capacitor electrode, including thermally treating a carbide compound in a vacuum, thus obtaining a vacuum-treated carbide compound; and thermochemically reacting the vacuum-treated carbide compound with a halogen element-containing gas, thus extracting the element other than carbon from the vacuum-treated carbide compound, wherein annealing can be further performed after thermochemical reaction. This carbide-derived carbon has a small pore distribution, dense graphite fringe, and a large lattice spacing and thus high ion mobility, compared to conventional carbide-derived carbon obtained only by thermochemical reaction with a halogen element-containing gas.

First claim

What is claimed is:

1. A method of preparing a carbide-derived carbon, comprising:
thermally treating a carbide compound in a vacuum, thus obtaining a vacuum-treated carbide compound wherein lattice spacing of the vacuum-treated carbide compound is increased; and
thermochemically reacting the vacuum-treated carbide compound with a halogen element-containing gas, thus extracting an element other than carbon from the vacuum-treated carbide compound,
wherein the carbine-derived carbon has an XRD (X-ray diffraction) peak intensity of 6000 to 8000 between 20° and 30°; and;
wherein thermally treating in a vacuum is performed at 1100˜1900° C. for 3˜7 hr.

2. The method of claim 1 , wherein the carbide compound is a compound of carbon and an element selected from the group consisting of Groups 3, 4, 5, and 6 elements, and combinations thereof.

3. The method of claim 2 , wherein the carbide compound is at least one selected from the group consisting of SiC, B x C y , TiC, ZrC x , Al x C y , Ca x C y , Ti x Ta y C, Mo x W y C, TiN x C y , ZrN x C y , SiC 4 , TiAlC, and Mo 2 C (wherein x and y are stoichiometrically determined).

4. The method of claim 3 , wherein the carbide compound is TiC.

5. The method of claim 1 , wherein the halogen element-containing gas is selected from the group consisting of Cl 2 , TiCl 4 , and F 2 .

6. The method of claim 5 , wherein the halogen element-containing gas is Cl 2 .

7. The method of claim 1 , wherein thermochemically reacting is performed at 200˜1200° C.

8. The method of claim 7 , wherein thermochemically reacting is performed for 3˜5 hr.

9. The method of claim 1 , further comprising performing annealing with any one gas selected from the group consisting of H 2 , Ar, N 2 , and NH 3 , after thermochemically reacting.

10. The method of claim 9 , wherein annealing is performed for 1˜3 hr.

Assignees

• Korea Energy Research Inst

Inventors

• Yeon Sun-Hwa
• Shin Kyoung-Hee
• Jin Chang-Soo
• Jung Kyu-Nam
• Yoon Sukeun
• Jeon Jae-Deok
• Shim Joonmok
• Yang Jung-Hoon
• Lee Bum-Suk
• Jeon Myung Seok
• Ahn Wook

Classifications

• C01B31/02 Primary

  Chemistry & Metallurgy · mapped topic

• C01P2002/74

  by peak-intensities or a ratio thereof only · CPC title

• C01B21/0828

  Carbonitrides or oxycarbonitrides of metals, boron or silicon · CPC title

• C01P2006/12

  Surface area · CPC title

• H01M4/587

  for inserting or intercalating light metals · CPC title