Continuous-time linear equalizer for high-speed receiving unit
US-9288085-B2 · Mar 15, 2016 · US
US9735989B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9735989-B1 |
| Application number | US-201615190575-A |
| Country | US |
| Kind code | B1 |
| Filing date | Jun 23, 2016 |
| Priority date | Jun 23, 2016 |
| Publication date | Aug 15, 2017 |
| Grant date | Aug 15, 2017 |
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The disclosed embodiments relate to the design of an equalizer that uses both cross-coupled cascodes and inductive peaking to reduce distortion in a signal received from a communication channel by attenuating lower frequencies and amplifying higher frequencies. At lower frequencies, when the effects of inductive impedance within the equalizer are negligible, the equalizer essentially functions as a traditional cascode amplifier that presents high gain. At higher frequencies, the increases in inductive impedances within the equalizer act to boost a gain of the equalizer.
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What is claimed is: 1. An equalizer, comprising: a differential input comprising a first input and a second input; a differential output comprising a first output and a second output; a first inductor with a lower terminal and an upper terminal, wherein the upper terminal is coupled to V DD ; a second inductor with a lower terminal and an upper terminal, wherein the upper terminal is coupled to V DD ; a first resistor with an upper terminal and a lower terminal, wherein the upper terminal is coupled to the lower terminal of the first inductor; a second resistor with an upper terminal and a lower terminal, wherein the upper terminal is coupled to the lower terminal of the second inductor; a first cascode comprising a first upper transistor and a first lower transistor, wherein a drain of the first upper transistor is coupled to the lower terminal of the first resistor and the first output, wherein a gate of the first upper transistor is cross-coupled to the lower terminal of the second inductor, wherein a source of the first upper transistor is coupled to a drain of the first lower transistor, and wherein a gate of the first lower transistor is coupled to the first input; a second cascode comprising a second upper transistor and a second lower transistor, wherein a drain of the second upper transistor is coupled to the lower terminal of the second resistor and the second output, wherein a gate of the second upper transistor is cross-coupled to the lower terminal of the first inductor, wherein a source of the second upper transistor is coupled to a drain of the second lower transistor, and wherein a gate of the second lower transistor is coupled to the second input; a first current source coupled between a source of the first lower transistor and ground; and a second current source coupled between a source of the second lower transistor and ground. 2. The equalizer of claim 1 , further comprising a source-degeneration resistor coupled between the source of the first lower transistor and the source of the second lower transistor. 3. The equalizer of claim 1 , wherein the first upper transistor, the first lower transistor, the second upper transistor and the second lower transistor comprise nanoscale FinFET devices. 4. The equalizer of claim 1 , wherein increased impedances of the first and second inductors at higher frequencies act to boost a gain of the equalizer at the higher frequencies. 5. The equalizer of claim 1 , wherein the equalizer comprises a continuous time linear equalizer. 6. The equalizer of claim 1 , wherein a differential signal that feeds into the differential input is received from a communication channel. 7. The equalizer of claim 1 , wherein the first and second inductors, the first and second resistors, the first and second cascodes and the first and second current sources are integrated onto a single semiconductor chip. 8. A system, comprising: at least one processor; at least one memory coupled to the at least one processor; and an equalizer that facilitates communications among components in the system, wherein the equalizer includes: a differential input comprising a first input and a second input; a differential output comprising a first output and a second output; a first inductor with a lower terminal and an upper terminal, wherein the upper terminal is coupled to V DD ; a second inductor with a lower terminal and an upper terminal, wherein the upper terminal is coupled to V DD ; a first resistor with an upper terminal and a lower terminal, wherein the upper terminal is coupled to the lower terminal of the first inductor; a second resistor with an upper terminal and a lower terminal, wherein the upper terminal is coupled to the lower terminal of the second inductor; a first cascode comprising a first upper transistor and a first lower transistor, wherein a drain of the first upper transistor is coupled to the lower terminal of the first resistor and the first output, wherein a gate of the first upper transistor is cross-coupled to the lower terminal of the second inductor, wherein a source of the first upper transistor is coupled to a drain of the first lower transistor, and wherein a gate of the first lower transistor is coupled to the first input; a second cascode comprising a second upper transistor and a second lower transistor, wherein a drain of the second upper transistor is coupled to the lower terminal of the second resistor and the second output, wherein a gate of the second upper transistor is cross-coupled to the lower terminal of the first inductor, wherein a source of the second upper transistor is coupled to a drain of the second lower transistor, and wherein a gate of the second lower transistor is coupled to the second input; a first current source coupled between a source of the first lower transistor and ground; and a second current source coupled between a source of the second lower transistor and ground. 9. The system of claim 8 , further comprising a source-degeneration resistor coupled between the source of the first lower transistor and the source of the second lower transistor. 10. The system of claim 8 , wherein the first upper transistor, the first lower transistor, the second upper transistor and the second lower transistor comprise nanoscale FinFET devices. 11. The system of claim 8 , wherein increased impedances of the first and second inductors at higher frequencies act to boost a gain of the equalizer at the higher frequencies. 12. The system of claim 8 , wherein the equalizer comprises a continuous time linear equalizer. 13. The system of claim 8 , wherein a differential signal that feeds into the differential input is received from a communication channel that facilitates communications among the components in the system. 14. The system of claim 8 , wherein the first and second inductors, the first and second resistors, the first and second cascodes and the first and second current sources are integrated onto a single semiconductor chip within the system.
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