Step-down circuit

Patent metadata

Field	Value
Publication number	US-9735682-B1
Application number	US-201615250816-A
Country	US
Kind code	B1
Filing date	Aug 29, 2016
Priority date	Mar 15, 2016
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

A step-down circuit includes a first transistor of N-type having a channel between an input terminal and a first node, and a gate to which a reference voltage that is lower than a peak value of an AC voltage applied to the input terminal is applied, a second transistor of P-type having a channel between the input terminal and a second node, and a gate to which the reference voltage is applied, a third transistor of N-type having a channel between the first node and an output terminal, and a gate to which the AC voltage is applied, a fourth transistor of P-type having a channel between the second node and the output terminal, and a gate to which the AC voltage is applied, a first capacitor connected between the first node and the second node, and a second capacitor connected between the output terminal and a reference potential terminal.

First claim

What is claimed is:

1. A step-down circuit, comprising:
input and output terminals;
a first transistor of N-type having a channel between an input terminal and a first node, and a gate to which a reference voltage is applied, wherein the reference voltage is lower than a peak value of an AC voltage applied to the input terminal;
a second transistor of P-type having a channel between the input terminal and a second node, and a gate to which the reference voltage is applied;
a third transistor of N-type having a channel between the first node and the output terminal, and a gate to which the AC voltage is applied;
a fourth transistor of P-type having a channel between the second node and the output terminal, and a gate to which the AC voltage is applied;
a first capacitor connected between the first node and the second node; and
a second capacitor connected between the output terminal and a reference potential terminal.

2. The step-down circuit according to claim 1 , wherein
sources of the first and third transistors are connected to the first node, and
sources of the second and fourth transistors are connected to the second node.

3. The step-down circuit according to claim 2 , wherein
each of the first, second, third, and fourth transistors includes a back gate connected to a source thereof.

4. The step-down circuit according to claim 1 , wherein, during operation:
a first parasitic diode that allows a current flow from the first node to the input terminal is formed between the first node and the input terminal;
a second parasitic diode that allows a current flow from the input terminal to the second node is formed between the second mode and the input terminal;
a third parasitic diode that allows a current flow from the second node to the output terminal is formed between the first node and the output terminal; and
a fourth parasitic diode that allows a current flow from the output terminal and the second node is formed between the second node and the output terminal.

5. The step-down circuit according to claim 1 , wherein
a capacitance of the second capacitor is greater than a capacitance of the first capacitor.

6. The step-down circuit according to claim 1 , wherein
a breakdown voltage of each of the first, second, third, and fourth transistors is smaller than the peak value of the AC voltage.

7. The step-down circuit according to claim 1 , wherein
an output voltage of the output terminal approaches the reference voltage during operation of the step-down circuit.

8. A step-down circuit, comprising:
a first step-down circuit module connected between a first input terminal to which an AC voltage is applied and an output terminal;
a second step-down circuit module connected between a second input terminal to which a phase-shifted signal of the AC voltage is applied and the output terminal; and
a first capacitor connected between the output terminal and a reference potential terminal,
wherein each of the first and second step-down circuit modules includes:
a first transistor of N-type having a channel between an input terminal and a first node, and a gate to which a reference voltage is applied, wherein the reference voltage is lower than a peak value of AC voltage that is applied to the respective input terminal;
a second transistor of P-type having a channel between the input terminal and a second node, and a gate to which the reference voltage is applied;
a third transistor of N-type having a channel between the first node and an output terminal, and a gate to which the AC voltage is applied;
a fourth transistor of P-type having a channel between the second node and the output terminal, and a gate to which the AC voltage is applied; and
a second capacitor connected between the first node and the second node.

9. The step-down circuit according to claim 8 , wherein
a phase difference between the AC voltage and the phase-shifted signal of the AC voltage is 180°.

10. The step-down circuit according to claim 8 , further comprising:
a third step-down circuit module connected between a third input terminal to which a phase-shifted signal of the AC voltage being applied to the third terminal, and
a phase difference between the AC voltages applied to any two of the first, second, and third input terminals is 120°.

11. The step-down circuit according to claim 8 , wherein, in each of the first and second step-down circuit modules,
sources of the first and third transistors are connected to the first node, and
sources of the second and fourth transistors are connected to the second node.

12. The step-down circuit according to claim 11 , wherein, in each of the first and second step-down circuit modules,
each of the first, second, third, and fourth transistors includes a back gate connected to a source thereof.

13. The step-down circuit according to claim 8 , wherein
a capacitance of the first capacitor is greater than a capacitance of the second capacitor in each of the first and second step-down circuit module.

14. The step-down circuit according to claim 8 , wherein, in each of the first and second step-down circuit modules,
a breakdown voltage of each of the first, second, third, and fourth transistors is smaller than the peak value of the AC voltage.

15. A method for operating a step-down circuit including:
an input terminal to which an AC voltage is applied;
a first transistor of N-type having a channel between the input terminal and a first node;
a second transistor of P-type having a channel between the input terminal and a second node;
a third transistor of N-type having a channel between the first node and an output terminal of the step-down circuit;
a fourth transistor of P-type having a channel between the second node and the output terminal;
a first capacitor connected between the first node and the second node; and
a second capacitor connected between the output terminal and a reference potential terminal, wherein the method comprises the steps of:
applying a reference voltage that is lower than a peak value of the AC voltage to gates of the first and second transistors; and
applying the AC voltage to gates of the third and fourth transistors.

16. The method according to claim 15 , wherein
sources of the first and third transistors are connected to the first node, and
sources of the second and fourth transistors are connected to the second node.

17. The method according to claim 16 , wherein
each of the first, second, third, and fourth transistors includes a back gate connected to a source thereof.

18. The method according to claim 15 , wherein
a capacitance of the second capacitor is greater than a capacitance of the first capacitor.

19. The method according to claim 15 , wherein
a breakdown voltage of each of the first, second, third, and fourth transistors is smaller than the peak value of the AC voltage.

Assignees

• Toshiba Kk

Inventors

• Tamura Motoki

Classifications

• H02M2003/072

  Electricity · mapped topic

• H02M3/07 Primary

  using capacitors charged and discharged alternately by semiconductor devices with control electrode {, e.g. charge pumps} · CPC title

• H02M3/158 Primary

  including plural semiconductor devices as final control devices for a single load · CPC title

• H02M3/072

  adapted to generate an output voltage whose value is lower than the input voltage · CPC title