Semiconductor laser element and semiconductor laser device

Patent metadata

Field	Value
Publication number	US-9735548-B2
Application number	US-201615376758-A
Country	US
Kind code	B2
Filing date	Dec 13, 2016
Priority date	Sep 10, 2014
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

A semiconductor laser element includes a semiconductor structure having an optical cavity and a protective film. The semiconductor structure includes a pair of stepped parts at both ends of the semiconductor structure in a cavity width direction, and a first texture pattern extending in a cavity length direction on a bottom surface of each of the stepped parts. The first texture pattern includes recesses and/or protrusions along the cavity length direction. The protective film covers at least part of the first texture pattern to define a second texture pattern having upper surfaces and bottom surfaces. A length of the bottom surfaces of the second texture pattern is less than a height from the bottom surfaces to a surface of the semiconductor structure. A length of the upper surfaces of the second texture pattern is less than a height from the upper surfaces to the surface of the semiconductor structure.

First claim

What is claimed is:

1. A semiconductor laser element comprising:
a semiconductor structure having an optical cavity, the semiconductor structure including
a pair of stepped parts arranged on a first main surface side of the semiconductor structure respectively at both ends of the semiconductor structure in a cavity width direction with the stepped parts extending along a cavity length direction, and
a first texture pattern extending in the cavity length direction on a bottom surface of each of the stepped parts, the first texture pattern including a plurality of recesses and/or a plurality of protrusions along the cavity length direction; and

a protective film covering at least part of the first texture pattern to define a second texture pattern having upper surfaces and bottom surfaces that are at a lower position than the upper surfaces, a length of the bottom surfaces of the second texture pattern along the cavity length direction being less than a height from the bottom surfaces of the second texture pattern to a surface on the first main surface side of the semiconductor structure, a length of the upper surfaces of the second texture pattern along the cavity length direction being less than a height from the upper surfaces of the second texture pattern to the surface on the first main surface side of the semiconductor structure.

2. The semiconductor laser element according to claim 1 , wherein
the protective film covers an entire surface of the first texture pattern.

3. The semiconductor laser element according to claim 1 , wherein
the protective film covers upper surfaces of the protrusions or bottom surfaces of the recesses of the first texture pattern.

4. The semiconductor laser element according to claim 1 , wherein
the semiconductor structure includes a substrate made of GaN.

5. The semiconductor laser element according to claim 1 , wherein
height difference between upper surfaces of the protrusions and bottom surfaces of the recesses of the first texture pattern is between 0.2 μm and 0.5 μM.

6. A semiconductor laser device comprising:
the semiconductor laser element according to claim 1 ; and
a support member on which the semiconductor laser element is mounted, with a side of the semiconductor laser element on which the stepped parts are formed being fixed to the support member with an adhesive member.

7. A semiconductor laser element comprising:
a semiconductor structure having an optical cavity, the semiconductor structure including
a pair of stepped parts arranged on a first main surface side of the semiconductor structure respectively at both ends of the semiconductor structure in a cavity width direction with the stepped parts extending along a cavity length direction, and
a first texture pattern extending in the cavity length direction on a bottom surface of each of the stepped parts, the first texture pattern including a plurality of recesses and/or a plurality of protrusions along the cavity length direction, the first texture pattern including upper surfaces that coincide with upper surfaces of the protrusions that protrude upward from the bottom surface of a corresponding one of the stepped parts, and bottom surfaces that are lower than the upper surfaces of the first texture pattern and have the same height as the bottom surface of the corresponding one of the stepped parts, the upper surfaces of the first texture pattern and the bottom surfaces of the first texture pattern being arranged in a repeating pattern along the cavity length direction; and

a protective film covering at least part of the first texture pattern to define a second texture pattern along the cavity length direction.

8. The semiconductor laser element according to claim 7 , wherein
the protective film covers an entire surface of the first texture pattern.

9. The semiconductor laser element according to claim 7 , wherein
the protective film covers upper surfaces of the protrusions or bottom surfaces of the recesses of the first texture pattern.

10. The semiconductor laser element according to claim 7 , wherein
the semiconductor structure includes a substrate made of GaN.

11. The semiconductor laser element according to claim 7 , wherein
height difference between upper surfaces of the protrusions and bottom surfaces of the recesses of the first texture pattern is between 0.2 μm and 0.5 μm.

12. A semiconductor laser device comprising:
the semiconductor laser element according to claim 7 ; and
a support member on which the semiconductor laser element is mounted, with a side of the semiconductor laser element on which the stepped parts are formed being fixed to the support member with an adhesive member.

13. A semiconductor laser element comprising:
a semiconductor structure having an optical cavity, the semiconductor structure including
a pair of stepped parts arranged on a first main surface side of the semiconductor structure respectively at both ends of the semiconductor structure in a cavity width direction with the stepped parts extending along a cavity length direction, and
a first texture pattern extending in the cavity length direction on a bottom surface of each of the stepped parts, the first texture pattern including a plurality of recesses and/or a plurality of protrusions along the cavity length direction; and

a protective film covering at least part of the first texture pattern, a thickness of the protective film formed on bottom surfaces of the first texture pattern being less than a height from the bottom surfaces of the first texture pattern to upper surfaces of the first texture pattern.

14. The semiconductor laser element according to claim 13 , wherein
the protective film covers an entire surface of the first texture pattern.

15. The semiconductor laser element according to claim 13 , wherein
the semiconductor structure includes a substrate made of GaN.

16. The semiconductor laser element according to claim 13 , wherein
height difference between upper surfaces of the protrusions and bottom surfaces of the recesses of the first texture pattern is between 0.2 μm and 0.5 μm.

17. A semiconductor laser device comprising:
the semiconductor laser element according to claim 13 ; and
a support member on which the semiconductor laser element is mounted, with a side of the semiconductor laser element on which the stepped parts are formed being fixed to the support member with an adhesive member.

Assignees

• Nichia Corp

Inventors

• Harada Susumu
• Kawata Yasuhiro

Classifications

• H01S5/028

  Coatings {; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers} · CPC title

• H01S5/0202

  Cleaving · CPC title

• H01S5/22

  having a ridge or stripe structure · CPC title

• H01S5/32341 Primary

  blue laser based on GaN or GaP · CPC title

• H01S5/0234

  Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings · CPC title