Method for producing semiconductor light receiving device

Patent metadata

Field	Value
Publication number	US-9735311-B2
Application number	US-201514962707-A
Country	US
Kind code	B2
Filing date	Dec 8, 2015
Priority date	Dec 10, 2014
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

A method for producing a semiconductor light receiving device includes the steps of growing a stacked semiconductor layer including a light-receiving layer having a super-lattice structure, the super-lattice structure including first and second semiconductor layers stacked alternately; forming a mesa structure by etching the stacked semiconductor layer, the mesa structure having a side surface exposed in an atmosphere; forming a deposited layer on the side surface of the mesa structure by supplying a silicon raw material, the deposited layer containing silicon generated from the silicon raw material; and, after the step of forming the deposited layer, forming a passivation film on the side surface of the mesa structure. The first semiconductor layer contains gallium as a constituent element. In the step of forming the deposited layer, the silicon raw material is supplied without supplying an oxygen raw material containing an oxygen element.

First claim

What is claimed is:

1. A method for producing a semiconductor light receiving device, the method comprising the steps of:
growing a stacked semiconductor layer on a principal surface of a substrate, the stacked semiconductor layer including a light-receiving layer having a super-lattice structure, the super-lattice structure including a first semiconductor layer and a second semiconductor layer that are stacked alternately;
forming a mask on the stacked semiconductor layer;
forming a mesa structure on the substrate by etching the stacked semiconductor layer using the mask so as to form a substrate product, the mesa structure having a side surface exposed in an atmosphere and an oxide layer containing oxygen and a constituent element of the super-lattice structure on the exposed side surface;
forming a deposited layer on the oxide layer of the side surface of the mesa structure by supplying a silicon raw material, the deposited layer containing amorphous silicon generated from the silicon raw material; and
after the step of forming the deposited layer, forming a passivation film on the deposited layer of the side surface of the mesa structure, wherein
the first semiconductor layer contains gallium as a constituent element,
the second semiconductor layer contains a material different from a material of the first semiconductor layer, and
in the step of forming the deposited layer, the silicon raw material is supplied without supplying an oxygen raw material containing an oxygen element.

2. The method for producing a semiconductor light receiving device according to claim 1 , wherein, in the step of forming the deposited layer, the silicon raw material contains at least one of an inorganic silane compound and an organic silane compound.

3. The method for producing a semiconductor light receiving device according to claim 1 , wherein the deposited layer is formed by exposing the substrate product in plasma containing the silicon raw material.

4. The method for producing a semiconductor light receiving device according to claim 1 , wherein the deposited layer is formed by applying the silicon raw material on the side surface of the mesa structure.

5. The method for producing a semiconductor light receiving device according to claim 1 , wherein the deposited layer is formed by exposing the substrate product in an atmosphere of the silicon raw material.

6. The method for producing a semiconductor light receiving device according to claim 1 , wherein the silicon raw material contains at least one of SiH 4 and Si 2 H 6 .

7. The method for producing a semiconductor light receiving device according to claim 1 , wherein the silicon raw material contains tetraethoxysilane.

8. The method for producing a semiconductor light receiving device according to claim 1 , wherein the passivation film is made of silicon dioxide, silicon oxy-nitride, or aluminum oxide.

9. The method for producing a semiconductor light receiving device according to claim 1 , wherein
the first semiconductor layer of the super-lattice structure is made of GaSb, and
the second semiconductor layer of the super-lattice structure is made of InAs.

10. The method for producing a semiconductor light receiving device according to claim 1 , wherein, in the step of the forming the deposited layer, the amorphous silicon in the deposited layer bonds to the oxygen in the oxide layer.

Assignees

• Sumitomo Electric Industries

Inventors

• Tsuji Yukihiro

Classifications

• H01L31/035281

  Electricity · mapped topic

• H01L31/035236

  Electricity · mapped topic

• H01L27/14652

  Electricity · mapped topic

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H01L31/184 Primary

  Electricity · mapped topic