Thin film transistor substrate having high reliability metal oxide semiconductor material

Patent metadata

Field	Value
Publication number	US-9735286-B2
Application number	US-201615156263-A
Country	US
Kind code	B2
Filing date	May 16, 2016
Priority date	May 22, 2015
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor material. A thin film transistor substrate includes a substrate, a gate electrode disposed on the substrate, a semiconductor layer including an oxide semiconductor material combining one or more of indium, gallium and zinc, oxygen, and a doping material. The doping material may be a group 15 or 16 gaseous element. The semiconductor layer has a channel area overlapping with the gate electrode with a gate insulating layer, a source area extended from one side of the channel area, and a drain area extended from another side of the channel area, a source electrode connected to the source area, and a drain electrode connected to the drain area.

First claim

What is claimed is:

1. A thin film transistor substrate comprising:
a substrate;
a gate electrode disposed on the substrate;
a semiconductor layer, the semiconductor layer comprising:
a channel area, at least a portion of the channel area overlapping with the gate electrode and including a first oxide semiconductor material that is a combination of oxygen, a doping material, indium, gallium, and zinc, the first oxide semiconductor material comprising oxygen vacancies, wherein doping material particles occupy 60-80% of the oxygen vacancies;
a source area extending from one side of the channel area; and
a drain area extending from another side of the channel area;

a gate insulating layer in between the gate electrode and the semiconductor layer;
a source electrode connected to at least a portion of the source area;
a drain electrode connected to at least a portion of the drain area.

2. The thin film transistor substrate of claim 1 , wherein the oxygen and the indium, gallium, and zinc in sum are 95 to 99 atomic % of the first oxide semiconductor material, and wherein the doping material is 1 to 5 atomic % of the first oxide semiconductor material.

3. The thin film transistor substrate of claim 1 , wherein the doping material is any one of group 15 elements or group 16 elements.

4. The thin film transistor substrate of claim 3 , wherein the doping material includes any one selected from a group consisting of nitrogen (N), phosphorus (P), fluorine (F), selenium (Se), and tellurium (Te).

5. The thin film transistor substrate of claim 3 , wherein the doping material is bonded to the indium, gallium, and zinc.

6. The thin film transistor substrate of claim 1 , wherein the source area and the drain area include the first oxide semiconductor material.

7. The thin film transistor substrate of claim 1 , wherein the source area and the drain area include a second oxide semiconductor material that is a combination of oxygen and one or more of indium, gallium, and zinc without the doping material of the first oxide semiconductor material.

8. The thin film transistor substrate of claim 1 , wherein at least a portion of the source area and at least a portion of the drain area are conductorized.

9. A method of forming a thin film transistor substrate, the method comprising:
forming a gate electrode on a substrate;
forming a semiconductor layer, the semiconductor layer including a channel area, a source area extending from one side of the channel area, and a drain area extending from another side of the channel area, at least a portion of the channel area overlapping with the gate electrode and including a first oxide semiconductor material that is a combination of oxygen, a doping material, indium, gallium, and zinc, the first oxide semiconductor material comprising oxygen vacancies, wherein the doping material particles occupy 60-80% of the oxygen vacancies;
forming a gate insulating layer in between the gate electrode and the semiconductor layer;
forming a source electrode connected to at least a portion of the source area; and
forming a drain electrode connected to at least a portion of the drain area.

10. The method of claim 9 , wherein forming the semiconductor layer comprises:
depositing the indium, gallium, and zinc on the substrate with exposure to oxygen gas and gas of the dopant material in a chamber.

11. The method of claim 10 , wherein depositing the indium, gallium, and zinc comprises sputtering an indium target, a gallium target, and a zinc target.

12. The method of claim 10 , wherein an amount of the dopant material gas is 50% to 70% of an amount of total gas in the chamber.

13. The method of claim 9 , wherein the oxygen and the indium, gallium, and zinc in sum are 95 to 99 atomic % of the first oxide semiconductor material, and wherein the doping material is 1 to 5 atomic % of the first oxide semiconductor material.

14. The method of claim 9 , wherein the doping material is any one of group 15 elements or group 16 elements.

15. The method of claim 14 , wherein the doping material includes any one selected from a group consisting of nitrogen (N), phosphorus (P), fluorine (F), selenium (Se), and tellurium (Te).

16. The method of claim 14 , wherein the doping material is bonded to the indium, gallium, and zinc.

17. The method of claim 9 , wherein forming the semiconductor layer further comprises applying plasma treatment to at least a portion of the source area and the drain area to conductorize the portion of the source area and the drain area.

18. The method of claim 9 , wherein forming the semiconductor layer comprises:
depositing a layer of the first oxide semiconductor material on the substrate; and
patterning the layer of the first oxide semiconductor material to form the channel area and the source and drain areas of the semiconductor layer.

19. The method of claim 9 , wherein forming the semiconductor layer comprises:
forming the channel area;
depositing a layer of a second oxide semiconductor material that is a combination of oxygen and one or more of indium, gallium, and zinc without the doping material on or below the channel area; and
patterning the layer of the second oxide semiconductor material to form the source and drain areas of the semiconductor layer.

Assignees

• Lg Display Co Ltd
• Industry-Academic Cooperation Foundation Yonsei Univ

Inventors

• Kwon Jangyeon
• Bae Jonguk
• Baeck Juheyuck
• Park Kyung

Classifications

• H10P14/3454

  Amorphous · CPC title

• H10P14/3448

  Delta-doping · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H01L21/02565

  Electricity · mapped topic