Integrated secure device

Patent metadata

Field	Value
Publication number	US-9735105-B2
Application number	US-201514884805-A
Country	US
Kind code	B2
Filing date	Oct 16, 2015
Priority date	Oct 16, 2015
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

According to an example aspect of the present invention, there is provided an apparatus comprising a silicon layer comprising security circuitry and a first part of a first sensor, an insulator layer attached on the silicon layer, comprising integrated therein a second part of the first sensor, and a conducting pathway coupling the security circuitry to the first sensor, comprising a portion extending on the insulator layer and portions extending at least partly through the insulator layer.

First claim

The invention claimed is:

1. An apparatus comprising:
a silicon layer comprising security circuitry and a first part of a first sensor;
an insulator layer attached on the silicon layer, further comprising integrated therein a second part of the first sensor, and
a conducting pathway coupling the security circuitry to the first sensor, further comprising a portion extending on the insulator layer and portions extending at least partly through the insulator layer.

2. The apparatus according to claim 1 , wherein one of the portions extending at least partly through the insulator layer is electrically coupled with the second part of the first sensor.

3. The apparatus according to claim 1 , wherein the first sensor comprises a microphone and the first part thereof comprises at least one opening through the silicon layer.

4. The apparatus according to claim 1 , further comprising a second sensor integrated in the insulator layer and a second conducting pathway coupling the second sensor to the security circuitry.

5. The apparatus according to claim 4 , further comprising a third sensor integrated in the insulator layer and a third conducting pathway coupling the second sensor to the security circuitry.

6. The apparatus according to claim 4 , wherein the second sensor is at least one of a fingerprint sensor, image sensor and motion sensor, and the third sensor is at least one of a fingerprint sensor, image sensor and motion sensor.

7. The apparatus according to claim 1 , wherein the second part of the first sensor is located in a recess in the insulator layer.

8. The apparatus according to claim 1 , wherein the second part of the first sensor comprises active elements.

9. The apparatus according to claim 1 , wherein the insulator layer comprises a polyimide layer.

10. The apparatus according to claim 1 , wherein the conducting pathway portions extending at least partly through the insulator layer comprise copper or tungsten studs.

Assignees

• Nokia Technologies Oy

Inventors

• Cronin John

Classifications

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/4421

  the principal metal being copper · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10W20/43 Primary

  Layouts of interconnections · CPC title

• H10W42/405 Primary

  using active circuits · CPC title