Fabrication of semiconductor fin structures

Patent metadata

Field	Value
Publication number	US-9735010-B1
Application number	US-201615166645-A
Country	US
Kind code	B1
Filing date	May 27, 2016
Priority date	May 27, 2016
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

A semiconductor substrate is a provided and an insulating layer is formed thereon. A cavity structure is formed above the insulating layer, including a lateral growth channel and a fin seed structure arranged in the lateral growth channel. The fin seed structure provides a seed surface for growing a fin structure. One or more first semiconductor structures of a first semiconductor material and one or more second semiconductor structures of a second, different, semiconductor material are grown sequentially in the growth channel from the seed surface in an alternating way. The first semiconductor structures provide a seed surface for the second semiconductor structures and the second semiconductor structures provide a seed surface for the first semiconductor structures. The second semiconductor structures are selectively etched, thereby forming the fin structure comprising a plurality of parallel fins of the first semiconductor structures. Corresponding semiconductor structures are also included.

First claim

What is claimed is:

1. A method for fabricating a semiconductor structure, the method comprising:
providing a semiconductor substrate;
forming an insulating layer on the semiconductor substrate;
forming a cavity structure above the insulating layer, the cavity structure comprising a lateral growth channel and a fin seed structure arranged in the lateral growth channel, the fin seed structure providing a seed surface for growing a fin structure;
growing sequentially in the growth channel from the seed surface in an alternating way one or more first semiconductor structures of a first semiconductor material and one or more second semiconductor structures of a second semiconductor material, the first semiconductor material being different from the second semiconductor material, wherein the first semiconductor structures provide a seed surface for the second semiconductor structures and the second semiconductor structures provide a seed surface for the first semiconductor structures;
selectively etching the second semiconductor structures, thereby forming the fin structure comprising a plurality of parallel fins of the first semiconductor structures.

2. The method as claimed in claim 1 , comprising:
forming an opening in the insulating layer, the opening having sidewalls and a bottom, wherein the bottom corresponds to a seed surface of the substrate;
growing the fin seed structure from the seed surface of the substrate.

3. The method as claimed in claim 2 , wherein providing the fin seed structure comprises:
growing a first matching structure on the seed surface of the substrate;
growing a second matching structure on a seed surface of the first matching structure.

4. The method as claimed in claim 3 , wherein the first and the second matching structure are adapted to solve a growth mismatch between the material of the substrate and the first and/or the second semiconductor material in a stepwise approach.

5. The method as claimed in claim 1 , wherein the first semiconductor material is comprised of a group III-V compound material or a group II-VI compound material.

6. The method as claimed in claim 1 , wherein the second semiconductor material is comprised of a group III-V compound material or a group II-VI compound material.

7. The method as claimed in claim 1 , wherein the width of the first and the second semiconductor structure in the growth direction is controlled via the time of the epitaxial growth.

8. The method as claimed in claim 1 , wherein the width in the growth direction of the first semiconductor structure is less than 10 nm.

9. The method as claimed in claim 1 , wherein the width in the growth direction of the second semiconductor structure is between 10 nm and 30 nm.

10. The method as claimed in claim 1 , wherein the length of the first and the second semiconductor structure in a direction perpendicular to the growth direction is between 1 um and 10 um.

11. The method as claimed in claim 1 , wherein the width in the growth direction of the second semiconductor structure is at least two times greater than the width of the first semiconductor structure in the growth direction.

12. The method as claimed in claim 1 , wherein the selective etching is performed by wet etching.

13. The method as claimed in claim 1 , wherein the selective etching is performed by dry-etching.

14. The method as claimed in claim 1 , wherein the etching comprises dry etching by one of: Inductive Coupled Plasma (ICP); Reactive Ion Etching (RIE) and Electron Cyclotron Resonance (ECR).

15. The method as claimed in claim 1 , wherein the fins are further processed to form a Field Effect Transistor (FET) and wherein the fins establish a channel portion of the FET.

16. The method as claimed in claim 1 , wherein the first and the second semiconductor material are selected from the pairs of: (InGaAs, InP) or (AlGaSb, GaSb).

17. The method as claimed in claim 1 , wherein the growing of the first and the second semiconductor structures is performed by one of: metal organic chemical vapor deposition (MOCVD); atmospheric pressure CVD; low or reduced pressure CVD; ultra-high vacuum CVD; molecular beam epitaxy (MBE); atomic layer deposition (ALD) and hydride vapor phase epitaxy.

18. The method as claimed in claim 1 , further comprising:
growing a first array of fins in a first plane;
growing a second array of fins in a second plane above the first plane, thereby fabricating a 3-dimensional fin array structure.

19. The method as claimed in claim 1 , further comprising:
fabricating a first array of fins in a first plane by standard lithography and etching;
growing a second array of fins in a second plane above the first plane, thereby fabricating a 3-dimensional fin array structure.

20. The method as claimed in claim 1 , further comprising doping the first semiconductor structures by in situ doping.

21. The method as claimed in claim 1 , further comprising providing a geometrical constraint in the growth channel to reduce in plane crystalline defects.

22. The method as claimed in claim 21 , wherein the geometrical constraint is an in plane necking of the growth channel.

23. The method as claimed in claim 21 , wherein the geometrical constraint is a change of the in plane direction of the growth channel.

24. A semiconductor structure obtainable by a method as claimed in claim 1 .

25. A wafer comprising a plurality of semiconductor structures as claimed in claim 24 .

Assignees

• IBM

Inventors

• Caimi Daniele
• Czornomaz Lukas
• Fompeyrine Jean
• Uccelli Emanuele

Classifications

• H10P14/3421

  Arsenides · CPC title

• H10P14/3418

  Phosphides · CPC title

• H10P14/3258

  Crystal orientation · CPC title

• H10P14/3248

  consisting of two layers · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title