Sensor array with self-aligned optical cavities

Patent metadata

Field	Value
Publication number	US-9733128-B2
Application number	US-201514726536-A
Country	US
Kind code	B2
Filing date	May 31, 2015
Priority date	Jun 18, 2014
Publication date	Aug 15, 2017
Grant date	Aug 15, 2017

Abstract

A sensing device includes an array of sensing elements. Each sensing element includes a thermal infrared sensor, configured to output an electric signal in response to an intensity of infrared radiation that is incident on the sensor. An individual reflector is formed integrally with the sensor at a location separated from the sensor by one quarter wave at a selected wavelength of the infrared radiation.

First claim

We claim:

1. A sensing device, comprising an array of sensing elements, each sensing element comprising:
a thermal infrared sensor, configured to output an electric signal in response to an intensity of infrared radiation that is incident on the sensor; and
an individual reflector, formed integrally with the sensor at a location separated from the sensor by one quarter wave at a selected wavelength of the infrared radiation; and
wherein at least some of the sensing elements comprise multiple individual reflectors, which are separated from the sensor by one quarter wave at multiple different, respective wavelengths.

2. The device according to claim 1 , wherein the sensing element contains an open optical cavity between the sensor and the individual reflector.

3. The device according to claim 2 , wherein the individual reflector is perforated by a matrix of through-holes.

4. The device according to claim 1 , wherein each sensing element comprises one or more dielectric layers, which are deposited over the sensor, and wherein the individual reflector comprises a metal layer that is deposited over the one or more dielectric layers, thereby defining a dielectric optical cavity between the sensor and the individual reflector.

5. The device according to claim 1 , comprising a blind sensing element, which senses only its own temperature and not the infrared radiation that is incident on the device.

6. The device according to claim 5 , wherein the blind sensing element comprises a further thermal infrared sensor and a reflecting layer formed less than one quarter wave from the further thermal infrared sensor at the selected wavelength.

7. The device according to claim 1 , wherein the array comprises multiple dielectric and metal layers formed on a semiconductor substrate, and wherein at least one of the metal layers is configured to serve as the individual reflector for each of the sensing elements in the array.

8. The device according to claim 7 , wherein the thermal infrared sensor in each sensing element comprises a micro-machined temperature-sensitive transistor.

9. The device according to claim 8 , wherein the micro-machined temperature-sensitive transistor is a thermally-isolated metal oxide semiconductor (TMOS) sensor.

10. The device according to claim 7 , wherein the dielectric and metal layers are further formed so as to define columns between the sensing elements, wherein the columns maintain optical and thermal separation between the sensing elements.

11. A method for producing a sensing device, comprising fabricating an array of sensing elements on a semiconductor substrate, each sensing element comprising: a thermal infrared sensor, configured to output an electric signal in response to an intensity of infrared radiation that is incident on the sensor; and an individual reflector, formed integrally with the sensor at a location separated from the sensor by one quarter wave at a selected wavelength of the infrared radiation; and wherein fabricating the array comprises forming in at least some of the sensing elements multiple individual reflectors, which are separated from the sensor by one quarter wave at multiple different, respective wavelengths.

12. The method according to claim 11 , wherein fabricating the array comprises depositing one or more dielectric layers over the sensor, and depositing a metal layer over the one or more dielectric layers to serve as the individual reflector, thereby defining a dielectric optical cavity between the sensor and the individual reflector.

13. The method according to claim 11 , wherein fabricating the array comprises forming multiple dielectric and metal layers on the semiconductor substrate, wherein at least one of the metal layers is configured to serve as the individual reflector for each of the sensing elements in the array.

14. The method according to claim 13 , wherein the thermal infrared sensor in each sensing element comprises a micro-machined temperature-sensitive transistor.

Assignees

• Technion Res & Dev Foundation
• A B Todos Imaging 2012 Ltd
• Todos Tech Ltd

Inventors

• Nemirovsky Yael
• Shoham Yoav

Classifications

• H01L27/14649

  Electricity · mapped topic

• H01L27/14625

  Electricity · mapped topic

• G01J5/045 Primary

  Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements (getter arrangements per se H10W76/48, H10P36/03) · CPC title

• G01J5/024

  Special manufacturing steps or sacrificial layers or layer structures · CPC title

• H01L31/02327

  Electricity · mapped topic