Single-exposure high dynamic range CMOS image sensor pixel with internal charge amplifier

Patent metadata

Field	Value
Publication number	US-9729808-B2
Application number	US-201514822666-A
Country	US
Kind code	B2
Filing date	Aug 10, 2015
Priority date	Mar 12, 2013
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A single-exposure high dynamic range (HDR) image sensor utilizes a charge amplifier having a selectively coupled conversion capacitor to read a single photodiode charge during a multi-phase readout operation. An overflow readout is performed during the photodiode charge integration phase, and utilizes the conversion capacitor to read overflow signals indicating rapidly rising photodiode charges caused by extreme exposure conditions, which also prevents saturation of the photodiode. At the end of the integration phase, the remaining photodiode charge is then measured using two readouts: a high sensitivity readout during which the storage capacitor de-coupled to accurately measure low-light conditions, and a low sensitivity readout during which the remaining photodiode charge is stored on the storage capacitor to provide normal light image data. Final single exposure HDR image data is then calculated by summing the overflow image data with the high-sensitivity and/or the low-sensitivity image data.

First claim

The invention claimed is:

1. A CMOS image sensor comprising:
a plurality of pixels, wherein each pixel includes:
a photodiode;
a transfer gate coupled between the photodiode and a first node;
a charge amplifier coupled between the first node and a second node, the charge amplifier including:
a charge-to-voltage conversion capacitor having a first terminal connected to the second node; and
a mode control switch connected between the first node and a second terminal of the conversion capacitor; and

a control circuit configured to control the mode control switch and the transfer gate to measure a photodiode charge generated on the photodiode during a single integration/readout cycle such that:
during a first readout phase of the single integration/readout cycle, the mode control switch is actuated to operatively de-couple the conversion capacitor from the first node, and the transfer gate is actuated such that a first readout voltage is generated on the first node in accordance with the photodiode charge; and
during a second readout phase of the single integration/readout cycle, the mode control switch is actuated to operably couple the conversion capacitor to the first node, and the transfer gate is actuated, whereby a second readout voltage generated on the first node is at least partially stored on the conversion capacitor.

2. The CMOS image sensor of claim 1 , further comprising at least one current source configured to generate a predetermined signal current on a signal line,
wherein each said pixel further comprises a select switch connected between the signal line and the second node, and
wherein the charge amplifier of each said pixel includes an amplifier transistor having a first terminal connected to the second node, a second terminal connected to a first voltage source, and a gate terminal connected to the first node,
wherein during the first readout phase, the select switch is actuated to operably couple the signal line to the second node, whereby a first readout signal is generated on the signal line in accordance with the first readout voltage, and
wherein during the second readout phase, the select switch is actuated to couple the signal line to the second node, whereby a second readout signal is generated on the signal line in accordance with the second readout voltage.

3. The CMOS image sensor of claim 2 , wherein the control circuit is configured to generate said first readout signal and said second readout signal after an integration phase of the single integration/readout cycle, whereby the first readout voltage is generated on the first node in accordance with a final version of said photodiode charge while the conversion capacitor is operatively de-coupled from the first node, and the second readout voltage is generated on the first node in accordance with the final version of the photodiode charge while the conversion capacitor is operatively coupled to the first node.

4. The CMOS image sensor of claim 2 , wherein the control circuit is configured to generate said second readout signal during an integration phase of the single integration/readout cycle while a partial version of the photodiode charge is generated on said photodiode, and said control circuit is further configured to generate said first readout signal after said integration phase when a final photodiode charge is generated on said photodiode, whereby the second readout voltage is generated on the first node in accordance with the partial version of the photodiode charge while the conversion capacitor is operatively coupled to the first node, and the first readout voltage is subsequently generated on the first node in accordance with the final version of the photodiode charge while the conversion capacitor is operatively de-coupled from the first node.

5. The CMOS image sensor of claim 4 ,
wherein each said pixel includes a bias circuit configured to generate a continuous nominal bias voltage on the first node, and
wherein the control circuit is configured to actuate the transfer gate by generating an intermediate transfer gate control voltage such that the transfer gate is partially turned on during the second readout phase, whereby the second readout voltage generated on the first node is one of (a) the continuous nominal bias voltage when the partial version of the photodiode charge is less than a predetermined charge value, and (b) an overflow readout voltage proportional to an amount by which the partial version of the photodiode charge exceeds the predetermined charge value.

6. The CMOS image sensor of claim 5 , wherein the bias circuit comprises a current source configured to generate a leakage current from the second node through the amplifier transistor.

7. The CMOS image sensor of claim 5 , wherein the bias circuit comprises a capacitor connected between the first node and the first voltage source.

8. The CMOS image sensor of claim 5 , wherein the bias circuit comprises a capacitor connected between the first node and a system voltage source.

9. The CMOS image sensor of claim 5 , wherein control circuit is further configured to control the mode control switch, the transfer gate and the select switch such that, during a third readout phase performed after said first readout phase, the mode control switch is controlled to operably couple the conversion capacitor to the first node, the select switch is actuated to couple the signal line to the second node, and the transfer gate is actuated such that a third readout voltage is generated on the first node in accordance with the final version of the photodiode charge while the conversion capacitor is operatively coupled to the first node, whereby a third readout signal is generated on the signal line in accordance with the third readout voltage.

10. The CMOS image sensor of claim 9 , further comprising a readout circuit configured to generate a final HDR image value by summing the second readout signal with at least one of said first readout signal and said third readout signal.

11. The CMOS image sensor of claim 2 ,
wherein each said pixel further comprising a reset transistor connected between the first and second nodes, and
wherein the control circuit is further configured to actuate said reset transistor, said select switch and said transfer gate during a reset phase prior to an integration phase of the single integration/readout cycle, whereby said photodiode is coupled to said signal line during said reset phase.

12. The CMOS image sensor of claim 1 ,
wherein the mode control switch comprises an NMOS transistor and the conversion capacitor comprises a first discrete capacitor connected between the NMOS transistor and the second node, and
wherein the charge amplifier of each said pixel further comprises a second discrete capacitor connected between the first and second nodes.

13. The CMOS image sensor of claim 1 ,
wherein the capacitor comprises at least one first discrete capacitor;
wherein the mode control switch comprises a first NMOS transistor connected between the first discrete capacitor and the first node, and
wherein the charge amplifier of each said pixel further comprises:
a second discrete capacitor connected to the second node, and
a second NMOS transistor connected between the second discrete capacitor and the first node.

14. The CMOS image sensor of claim 1 , wherein said plurality of pixels are arranged in a column such that each of said plurality of pixels is connected to said at least one current source by way of said signal line.

15. The CMOS image sensor of claim 1 , wherein the photodiode of each said pixel comprises a partia

Assignees

• Tower Semiconductor Ltd

Inventors

• Fenigstein Amos
• Reshef Raz
• Alfassi Shay
• Yehudian Guy

Classifications

• H04N25/583

  with different integration times · CPC title

• H04N25/59

  by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance · CPC title

• H04N25/57

  Control of the dynamic range · CPC title

• H04N25/767 Primary

  Horizontal readout lines, multiplexers or registers · CPC title

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title