Optoelectronic device including ferroelectric material

Patent metadata

Field	Value
Publication number	US-9728661-B2
Application number	US-201414558384-A
Country	US
Kind code	B2
Filing date	Dec 2, 2014
Priority date	May 19, 2014
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

Example embodiments relate to optoelectronic devices. An optoelectronic device may include a photoactive layer between first and second electrodes, and a ferroelectric layer corresponding to at least one of the first and second electrodes. At least one of the first and second electrodes may include graphene. The photoactive layer may include a two-dimensional (2D) semiconductor. The optoelectronic device may further include a third electrode, and in this case, the ferroelectric layer may be between the second electrode and the third electrode. The second electrode, the ferroelectric layer, and the third electrode may constitute a nanogenerator.

First claim

What is claimed is:

1. An optoelectronic device comprising:
a first electrode;
a second electrode separate from the first electrode;
a photoactive layer between the first and second electrodes;
a diffusion barrier layer on a surface of the second electrode; and
a ferroelectric layer on a surface of the diffusion barrier layer.

2. The optoelectronic device of claim 1 , wherein the first electrode, the photoactive layer, the second electrode, the diffusion barrier and the ferroelectric layer are on a substrate in sequence.

3. The optoelectronic device of claim 1 , wherein the ferroelectric layer, the diffusion barrier, the second electrode, the photoactive layer, and the first electrode are on a substrate in sequence.

4. The optoelectronic device of claim 1 , wherein
at least one of the first and second electrodes comprises graphene, and
the photoactive layer comprises a two-dimensional (2D) semiconductor.

5. The optoelectronic device of claim 1 , wherein the ferroelectric layer comprises at least one ferroelectric polymer.

6. The optoelectronic device of claim 1 , wherein
the ferroelectric layer has a positive or a negative polarization at a surface of the ferroelectric layer that is adjacent to the second electrode, and
the ferroelectric layer is configured to adjust a height of an energy barrier between the second electrode and the photoactive layer.

7. The optoelectronic device of claim 1 , wherein the optoelectronic device comprises a photodetector or a photovoltaic device.

8. The optoelectronic device of claim 7 , wherein the photodetector comprises a self-powered photodetector.

9. The optoelectronic device of claim 1 , further comprising a third electrode that is separate from the second electrode,
wherein the ferroelectric layer is between the second and third electrodes.

10. The optoelectronic device of claim 9 , wherein the first electrode, the photoactive layer, the second electrode, the diffusion barrier, the ferroelectric layer, and the third electrode are on a substrate in sequence.

11. The optoelectronic device of claim 9 , wherein the third electrode, the ferroelectric layer, the diffusion barrier, the second electrode, the photoactive layer, and the first electrode are on a substrate in sequence.

12. The optoelectronic device of claim 9 , wherein at least one of the first through third electrodes comprises graphene, and
the photoactive layer comprises a 2D semiconductor.

13. The optoelectronic device of claim 9 , wherein
the second electrode, the ferroelectric layer, and the third electrode constitute a piezoelectric nanogenerator, and
the piezoelectric nanogenerator is configured to generate electricity due to vibration.

14. The optoelectronic device of claim 9 , further comprising an electric storage device connected to the first electrode, the second electrode, and the third electrode.

15. The optoelectronic device of claim 1 , wherein
the diffusion barrier layer comprises a 2D insulating layer, and
the diffusion barrier layer has a thickness that is equal to or less than about 5 nm.

16. An optoelectronic apparatus comprising:
an optoelectronic element including a photoactive layer;
a nanogenerator connected to the optoelectronic element and including a ferroelectric substance; and
an electric storage device connected to the optoelectronic element and the nanogenerator;
wherein the optoelectronic apparatus includes a first graphene layer, a second graphene layer, and a third graphene layer,
the photoactive layer is between the first graphene layer and the second graphene layer,
the ferroelectric substance is between the second graphene layer and the third graphene layer, and
a diffusion barrier layer is between the second graphene layer and the ferroelectric substance.

17. The optoelectronic apparatus of claim 16 , wherein the photoactive layer comprises a two-dimensional (2D) semiconductor.

Assignees

• Samsung Electronics Co Ltd
• Univ Sungkyunkwan Res & Bus

Inventors

• Shin Hyeonjin
• Kim Sangwoo
• Shin Kyungsik
• Park Hye-Jung
• Cho Eunbi

Classifications

• H01L31/032 Primary

  Electricity · mapped topic

• H01L31/08

  Electricity · mapped topic

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/022408

  Electricity · mapped topic

• H01L31/0324

  Electricity · mapped topic