Sound transducer with interdigitated first and second sets of comb fingers
US-9402137-B2 · Jul 26, 2016 · US
US9728653B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9728653-B2 |
| Application number | US-201313947823-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 22, 2013 |
| Priority date | Jul 22, 2013 |
| Publication date | Aug 8, 2017 |
| Grant date | Aug 8, 2017 |
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A MEMS device includes a membrane comprising a first plurality of fingers. A counter electrode arrangement includes a second plurality of fingers disposed in a interdigitated relationship with the first plurality of fingers of the membrane. A deflector is configured to deflect the membrane such that the first and second plurality of fingers are displaced in a position excluding maximum overlapping of surfaces of the fingers.
Opening claim text (preview).
What is claimed is: 1. A MEMS device comprising: a membrane comprising a released portion having a first plurality of fingers; a counter electrode arrangement comprising a second plurality of fingers disposed in an interdigitated relationship with the first plurality of fingers, wherein the second plurality of fingers are moveable in relation to the released portion having the first plurality of fingers; a support, wherein the membrane is attached to the support resiliently by a resilient attachment, so that the released portion of the membrane is movable with respect to the support; and a deflector directly or indirectly affixed to the membrane and configured to deflect the membrane such that the first and second plurality of fingers are displaced in a rest position excluding maximum overlapping of surfaces of the fingers, wherein the deflector comprises a stress layer bonded to a surface of the membrane, and wherein the dielectric material of the stress layer and the material of the membrane are selected such that the different intrinsic stress of the dielectric material of the stress layer compared to the material of the membrane causes the resilient attachment to bend and the membrane to deflect. 2. The MEMS device according to claim 1 , wherein the stress layer and the membrane are selected from materials, respectively, creating, when bonded to each other, a force in relation to each other resulting in a contraction or expansion of the stress layer. 3. The MEMS device according to claim 2 , wherein the materials of the stress layer and the membrane, respectively, are selected such that the contraction or expansion of the stress layer results in a deflection of the membrane. 4. The MEMS device according to claim 1 , wherein the material of the membrane comprises poly-silicon, aluminum or copper, and wherein the dielectric material of the stress layer comprises oxide, SiN, Si3N4, SixNyO or a polyimide. 5. The MEMS device according to claim 1 , wherein, in a plane parallel to the surface of the membrane, the deflector is configured to offset planes of the first and second plurality of fingers, respectively. 6. The MEMS device according to claim 1 , wherein the deflector is configured to offset the overlapping area of opposite surfaces of the first and second plurality of fingers in the rest position within a range of 40% to 60%. 7. The MEMS device according to claim 1 , wherein the support supports the counter electrode arrangement, so that the second plurality of fingers is fixed with respect to the support. 8. The MEMS device according to claim 7 , wherein the deflector is arranged in a position overlapping at least a portion of the support. 9. The MEMS device according to claim 7 , wherein the resilient attachment comprises a portion of the membrane having a meander configuration. 10. The MEMS device according to claim 7 , wherein the resilient attachment comprises a portion of the membrane having a corrugated configuration. 11. The MEMS device according to claim 10 , wherein the deflector comprises a stress layer bonded to a surface of the membrane and the stress layer is composed of a material exhibiting different intrinsic stress compared to the material of the membrane, wherein the stress layer is bonded to portions of the corrugated membrane being in-plane to the plane of the membrane. 12. The MEMS device according to claim 7 , wherein the membrane is configured in a substantially rectangular form. 13. The MEMS device according to claim 12 , wherein the membrane is resiliently attached to the support in an attachment position comprising at least one lengthside of the membrane. 14. The MEMS device according to claim 13 , wherein the first plurality of fingers is attached to a perimeter of the membrane opposing the attachment position. 15. The MEMS device according to claim 12 , wherein the membrane is resiliently attached to the support in a position comprising portions of each lengthside of the membrane. 16. The MEMS device according to claim 15 , wherein the first plurality of fingers is attached to a perimeter of the membrane comprising portions of each of the lengthsides of the membrane. 17. The MEMS device according to claim 12 , wherein the membrane is resiliently attached to the support at positions comprising corners of the membrane. 18. The MEMS device according to claim 17 , wherein the resilient attachment comprises a portion of the membrane having a corrugated configuration extending at least partially in a direction linking opposing corners. 19. The MEMS device according to claim 18 , wherein the first plurality of fingers is attached to a perimeter of the membrane comprising each lengthside of the membrane. 20. The MEMS device according to claim 1 , wherein the MEMS device is configured to produce an output signal responsive to the relative movement of the membrane and the counter electrode arrangement. 21. An electrostatic transducer comprising: a membrane comprising a released portion having a first plurality of fingers; a counter electrode arrangement having a second plurality of fingers disposed in an interdigitated relationship with the first plurality of fingers, wherein the second plurality of fingers are moveable in relation to the released portion having the first plurality of fingers; a support, wherein the membrane is attached to the support resiliently by a resilient attachment, so that the released portion of the membrane is movable with respect to the support; and a deflector directly or indirectly affixed to the membrane and configured to deflect the membrane such that the first and second plurality of fingers are displaced in a rest position excluding maximum overlapping of surfaces of the fingers, wherein the deflector comprises a stress layer bonded to a surface of the membrane, and wherein the dielectric material of the stress layer and the material of the membrane are selected such that the different intrinsic stress of the dielectric material of the stress layer compared to the material of the membrane causes the resilient attachment to bend and the membrane to deflect. 22. A method for manufacturing a MEMS device comprising a membrane and a counter electrode arrangement, the method comprising: depositing a membrane layer on a surface, wherein the membrane is attached to a support resiliently by a resilient attachment; structuring the membrane layer to form an interdigitated comb drive comprising a first and second plurality of interdigitated fingers attached to a released portion of the membrane and the counter electrode arrangement, respectively, wherein the second plurality of fingers are moveable in relation to the released portion having the first plurality of fingers; providing a deflector affixed to a portion of the membrane layer, wherein the deflector comprises a stress layer, the stress layer comprising a dielectric material exhibiting different intrinsic stress compared to a material of the membrane; and performing a release etch that causes the released portion of the membrane to be movable with respect to the support and causes the deflector to deflect the membrane and to displace the first and second plurality of interdigitated fingers in a rest position excluding maximum overlapping of surfaces of the fingers, wherein the dielectric material of the stress layer and the material of the membrane are selected such that the different intrinsic stress of the dielectric material of the stress layer compared to the materi
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