Semiconductor devices

Patent metadata

Field	Value
Publication number	US-9728645-B2
Application number	US-201615146106-A
Country	US
Kind code	B2
Filing date	May 4, 2016
Priority date	Jan 28, 2014
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A method of manufacturing a semiconductor device includes partially removing an upper portion of an active fin of a substrate loaded in a chamber to form a trench; and forming a source/drain layer in the trench, which includes providing a silicon source gas, a germanium source gas, an etching gas and a carrier gas into the chamber to perform a selective epitaxial growth (SEG) process using a top surface of the active fin exposed by the trench as a seed so that a silicon-germanium layer is grown; and purging the chamber by providing the carrier gas into the chamber to etch the silicon-germanium layer.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate having an active fin extending in a second direction;
a plurality of gate structures on the active fin, each of the gate structures extending in a first direction substantially perpendicular to the second direction; and
a source/drain layer filling a trench on the active fin between the gate structures and having a cross-section cut along the first direction in a shape of a pentagon or hexagon, the cross-section cut including a band therein having a shape of a portion of an elliptical ring or a portion of a circular ring.

2. The semiconductor device as claimed in claim 1 , wherein the source/drain layer has a flat top surface in the second direction.

3. The semiconductor device as claimed in claim 1 , wherein the source/drain layer includes:
a first silicon-germanium layer;
a second silicon-germanium layer on the first silicon-germanium layer, the second silicon-germanium layer having higher contents of germanium and boron than the first silicon-germanium layer; and
a silicon layer on the second silicon-germanium layer.

4. The semiconductor device as claimed in claim 3 , wherein the second silicon-germanium layer has a cross-section cut along the first direction including a band therein having a shape of a portion of an elliptical ring or a portion of a circular ring.

5. The semiconductor device as claimed in claim 4 , wherein the band is a silicon-germanium layer having a higher content of silicon than portions of the second silicon-germanium layer adjacent thereto.

6. The semiconductor device as claimed in claim 1 , further comprising a spacer covering a lower sidewall of the source/drain layer and an upper sidewall of the active fin.

7. A semiconductor device, comprising:
a substrate having an active fin extending in a second direction;
a plurality of gate structures on the active fin, each of the gate structures extending in a first direction substantially perpendicular to the second direction; and
a source/drain layer filling a trench on the active fin between the gate structures,
wherein an upper cross-section of the source/drain layer cut along the second direction has a concave shape.

8. The semiconductor device as claimed in claim 7 , wherein the source/drain layer includes silicon-germanium.

9. The semiconductor device as claimed in claim 7 , wherein the source/drain layer has a having a cross-section cut along the first direction in a shape of a pentagon or hexagon.

10. The semiconductor device as claimed in claim 9 , wherein the cross-section of the source/drain layer includes a band therein having a shape of a portion of an elliptical ring or a portion of a circular ring.

11. The semiconductor device as claimed in claim 7 , wherein the source/drain layer includes a first silicon-germanium layer and a second silicon-germanium layer on the first silicon-germanium layer, and
wherein an upper cross-section of the second silicon-germanium layer cut along the second direction has a concave shape.

12. The semiconductor device as claimed in claim 11 , wherein the concave shape of the second silicon-germanium layer is rounder than that of the second silicon-germanium layer.

13. The semiconductor device as claimed in claim 7 , further comprising a spacer covering a lower sidewall of the source/drain layer and an upper sidewall of the active fin.

14. A semiconductor device, comprising:
a substrate having an active fin extending in a second direction;
a plurality of gate structures on the active fin, each of the gate structures extending in a first direction substantially perpendicular to the second direction;
a plurality of trenches between the gate structures, the trenches disposed in upper portions of the active fin; and
a plurality of source/drain layers in the trenches,
wherein each of upper cross-sections of the source/drain layers cut along the second direction has a concave shape.

15. The semiconductor device as claimed in claim 14 , wherein each of the source/drain layers includes:
a first silicon-germanium layer; and
a second silicon-germanium layer on the first silicon-germanium layer, the second silicon-germanium layer having higher contents of germanium and boron than the first silicon-germanium layer.

16. The semiconductor device as claimed in claim 15 , wherein the upper cross-section cut along the second direction of the second silicon-germanium layer has a V-like shape.

17. The semiconductor device as claimed in claim 15 , further comprising a silicon layer on the second silicon-germanium layer.

18. The semiconductor device as claimed in claim 15 , wherein the second silicon-germanium layer has a cross-section cut along the first direction including a band therein having a shape of a portion of an elliptical ring or a portion of a circular ring.

19. The semiconductor device as claimed in claim 18 , wherein the band is a silicon-germanium layer having a higher content of silicon than portions of the second silicon-germanium layer adjacent thereto.

20. The semiconductor device as claimed in claim 15 , further comprising a spacer covering a lower sidewall of each of the source/drain layers and an upper sidewall of the active fin.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Dong-Hyuk
• Shin Geo-Myung
• Shin Dong-Suk

Classifications

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3451

  Structure · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3411 Primary

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title