Imaging device comprising light-emitting element and light-receiving element

Patent metadata

Field	Value
Publication number	US-9728589-B2
Application number	US-201414470470-A
Country	US
Kind code	B2
Filing date	Aug 27, 2014
Priority date	Oct 28, 2011
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

Objects are to provide a small imaging device that can take an image of a thick book without distortion of an image of a gutter and to improve the portability of an imaging device by downsizing the imaging device. The imaging device has imaging planes on both surfaces. All elements included in the imaging device are preferably provided over one substrate. In other words, the imaging device has a first imaging plane and a second imaging plane facing opposite to the first imaging plane.

First claim

What is claimed is:

1. An imaging device comprising:
a first substrate;
a second substrate having a first surface facing a first surface of the first substrate;
a first light-blocking film over the first surface of the first substrate;
a first light-emitting element overlapping with the first light-blocking film, the first light-emitting element having: a first transistor comprising a first semiconductor layer; and a first light-emitting portion electrically connected to the first transistor;
a first light-receiving element overlapping with the first light-blocking film, the first light-receiving element having a second semiconductor layer;
a second light-emitting element over the first surface of the first substrate, the second light-emitting element having: a second transistor comprising a third semiconductor layer; and a second light-emitting portion electrically connected to the second transistor;
a second light-receiving element over the first surface of the first substrate, the second light-receiving element having a fourth semiconductor layer;
a base film over the first light-blocking film and under the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer;
a film over the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer; and
a second light-blocking film overlapping with the second light-emitting element and the second light-receiving element and under the second substrate,
wherein the first light-emitting portion and the second light-emitting portion are provided on the film.

2. The imaging device according to claim 1 , wherein light emitted from the first light-emitting portion is directed to a first subject facing a second surface of the second substrate, and light reflected from the first subject is directed to the first light-receiving element, and
wherein light emitted from the second light-emitting portion is directed to a second subject facing a second surface of the first substrate, and light reflected from the second subject is directed to the second light-receiving element.

3. The imaging device according to claim 1 , wherein each of the first semiconductor layer and the third semiconductor layer comprises one of silicon, germanium, silicon germanium, and an oxide semiconductor.

4. The imaging device according to claim 1 , wherein each of the first light-blocking film and the second light-blocking film comprises chromium, chromium oxide, or black resin.

5. An imaging device comprising:
a first substrate;
a second substrate having a first surface facing a first surface of the first substrate;
a first light-blocking film over the first surface of the first substrate;
a first light-emitting element overlapping with the first light-blocking film, the first light-emitting element having: a first transistor comprising a first semiconductor layer; and a first light-emitting portion electrically connected to the first transistor;
a first light-receiving element overlapping with the first light-blocking film, the first light-receiving element having a second semiconductor layer;
a second light-emitting element over the first surface of the first substrate, the second light-emitting element having: a second transistor comprising a third semiconductor layer; and a second light-emitting portion electrically connected to the second transistor;
a second light-receiving element over the first surface of the first substrate, the second light-receiving element having a fourth semiconductor layer;
a base film over the first light-blocking film and under the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer;
a film over the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer; and
a second light-blocking film overlapping with the second light-emitting element and under the second substrate,
wherein the first light-emitting portion and the second light-emitting portion are provided on the film.

6. The imaging device according to claim 5 , wherein light emitted from the first light-emitting portion is directed to a first subject facing a second surface of the second substrate, and light reflected from the first subject is directed to the first light-receiving element, and
wherein light emitted from the second light-emitting portion is directed to a second subject facing a second surface of the first substrate, and light reflected from the second subject is directed to the second light-receiving element.

7. The imaging device according to claim 5 , wherein each of the first semiconductor layer and the third semiconductor layer comprises one of silicon, germanium, silicon germanium, and an oxide semiconductor.

8. The imaging device according to claim 5 , wherein each of the first light-blocking film and the second light-blocking film comprises chromium, chromium oxide, or black resin.

9. The imaging device according to claim 5 , further comprising a third light-blocking film overlapping the second light-receiving element and under the second substrate.

10. An imaging device comprising:
a first substrate;
a second substrate having a first surface facing a first surface of the first substrate;
a first light-emitting element over the first surface of the first substrate, the first light-emitting element having: a first transistor comprising a first semiconductor layer; and a first light-emitting portion comprising a reflective film and electrically connected to the first transistor;
a first light-receiving element over the first surface of the first substrate, the first light-receiving element having a second semiconductor layer;
a second light-emitting element over the first surface of the first substrate, the second light-emitting element having: a second transistor comprising a third semiconductor layer; and a second light-emitting portion electrically connected to the second transistor;
a second light-receiving element over the first surface of the first substrate, the second light-receiving element having a fourth semiconductor layer;
a base film over the first substrate and under the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer;
a film over the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer; and
a first light-blocking film overlapping with the second light-emitting element and under the second substrate,
wherein the first light-emitting portion and the second light-emitting portion are provided on the film.

11. The imaging device according to claim 10 , wherein light emitted from the first light-emitting portion is directed to a first subject facing a second surface of the second substrate, and light reflected from the first subject is directed to the first light-receiving element, and
wherein light emitted from the second light-emitting portion is directed to a second subject facing a second surface of the first substrate, and light reflected from the second subject is directed to the second light-receiving element.

12. The imaging device according to claim 10 , wherein each of the first semiconductor layer and the third semiconductor layer comprises one of silicon, germanium, silicon germanium, and an oxide semiconductor.

13. The imaging device according to claim 10 , wherein the first light-blocking film comprises chromium, chromium oxide, or black resin.

Assignees

• Semiconductor Energy Lab

Inventors

• Kurokawa Yoshiyuki

Classifications

• H04N2201/0434

  specially adapted for scanning pages of a book · CPC title

• H04N1/195

  the array comprising a two-dimensional [2D] array · CPC title

• H04N2201/0081

  Image reader (H04N2201/0091 - H04N2201/0094 take precedence) · CPC title

• H01L27/3234 Primary

  Electricity · mapped topic

• H01L27/14623

  Electricity · mapped topic