Backside illuminated image sensor and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9728573-B2
Application number	US-201514600684-A
Country	US
Kind code	B2
Filing date	Jan 20, 2015
Priority date	Jan 20, 2015
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A back side illuminated (BSI) image sensor device, includes: a substrate including a front side and a back side opposite to the front side; a radiation-sensing region disposed in the substrate; and a deep trench isolation (DTI) grid disposed in the substrate and defining the radiation-sensing region. The DTI grid extends from the back side toward the front side, and includes a segmented strip in a top view from the back side.

First claim

What is claimed is:

1. A back side illuminated (BSI) image sensor device, comprising:
a substrate including a front side and a back side opposite to the front side;
a radiation-sensing region disposed in the substrate; and
a deep trench isolation (DTI) grid disposed in the substrate and defining the radiation-sensing region,
wherein the DTI grid extends from the back side toward the front side, and comprises a segmented strip and a continuous strip in a top view from the back side.

2. The BSI image sensor device of claim 1 , wherein the segmented strip is parallel to another segmented strip, and an image sensing unit of the radiation-sensing region is interposed between the two segmented strips.

3. The BSI image sensor device of claim 1 , wherein the DTI grid comprises a pair of adjacent and parallel segmented strips.

4. The BSI image sensor device of claim 1 , wherein the segmented strip is parallel to the continuous strip, and an image sensing unit of the radiation-sensing region is interposed between the segmented strip and the continuous strip.

5. The BSI image sensor device of claim 1 , wherein the DTI grid comprises a pair of segmented strips, and section lengths between the pair of segmented strips are different.

6. The BSI image sensor device of claim 1 , wherein the segmented strip intersects the continuous strip.

7. The BSI image sensor device of claim 6 , wherein the continuous strip is interposed between two sections of the segmented strip with a separation from each one of the two sections.

8. The BSI image sensor device of claim 1 , wherein the segmented strip intersects another segmented strip.

9. The BSI image sensor device of claim 1 , wherein the DTI grid comprises a pair of orthogonally intersected segmented strips.

10. The BSI image sensor device of claim 1 , wherein the segmented strip comprises two sections separated by a distance ranging from about 0.1 μm to 1 μm.

11. The BSI image sensor device of claim 1 , wherein the segmented strip comprises two sections separated by a distance, the distance is in a range from about 5% to 20% of a length of one of the two sections.

12. A back side illuminated (BSI) image sensor device, comprising:
a substrate including a front side and a back side opposite to the front side; and
an array of a radiation-sensing region comprising an image sensing unit defined by a deep trench isolation (DTI) loop, wherein the DTI loop comprises an open end and extends from the back side toward the front side, and two adjacent rows of the array of the radiation-sensing region are separated by a continuous strip of the DTI loop.

13. The BSI image sensor device of claim 12 , wherein the open end is located on a side of the DTI loop.

14. The BSI image sensor device of claim 12 , wherein the open end is located at a corner of the DTI loop.

15. The BSI image sensor device of claim 12 , wherein the open end is at a center of a 2×2 image sensing array in the array of the radiation-sensing region.

16. A method for manufacturing a back side illuminated (BSI) image sensor device comprising:
providing a substrate having a front side and a back side opposite to the front side;
forming a radiation-sensing region in the substrate;
forming a segmented ditch extending from the back side toward the front side, wherein the segmented ditch defines the radiation-sensing region;
filling a dielectric material within the segmented ditch to form a segmented strip of a deep trench isolation (DTI) grid; and
forming a shallow trench isolation (STI) grid extending from the front side toward the back side, wherein the STI grid is substantially aligned with the DTI grid.

17. The method of claim 16 , further comprising:
forming another segmented ditch intersecting with or in parallel to the segmented ditch.

18. The BSI image sensor device of claim 12 , further comprising a shallow isolation loop extending from the front side toward the back side, wherein the shallow isolation loop is substantially aligned with the DTI loop.

19. The BSI image sensor device of claim 12 , wherein the DTI loop further comprises a segmented strip.

20. The BSI image sensor device of claim 19 , wherein the segmented strip intersects the continuous strip.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tsai Tsung-Han
• Cheng Yun-Wei
• Chou Chun-Hao
• Lee Kuo-Cheng
• Hsu Yung-Lung

Classifications

• H01L27/14685

  Electricity · mapped topic

• H01L27/14689

  Electricity · mapped topic

• H01L27/14603

  Electricity · mapped topic

• H01L27/1464 Primary

  Electricity · mapped topic

• H01L27/14687

  Electricity · mapped topic