Reactive ion etching assisted lift-off processes for fabricating thick metallization patterns with tight pitch

Patent metadata

Field	Value
Publication number	US-9728444-B2
Application number	US-201514985900-A
Country	US
Kind code	B2
Filing date	Dec 31, 2015
Priority date	Dec 31, 2015
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

Lift-off methods for fabricating metal line patterns on a substrate are provided. For example, a method to fabricate a device includes forming a sacrificial layer on a substrate and forming a photoresist mask over the sacrificial layer, isotropically etching a portion of the sacrificial layer exposed through an opening of the photoresist mask to form an undercut region in the sacrificial layer below the photoresist mask, wherein the undercut region defines an overhang structure, and anisotropically etching a portion of the sacrificial layer exposed through the opening of the photoresist mask to form an opening through the sacrificial layer down to the substrate. Metallic material is deposited to cover the photoresist mask and to at least partially fill the opening formed in the sacrificial layer without coating the overhang structure with metallic material. The sacrificial layer is dissolved to lift-off the metallic material covering the photoresist mask.

First claim

We claim:

1. A method, comprising:
forming a sacrificial layer on a substrate;
forming a photoresist mask over the sacrificial layer, wherein the photoresist mask comprises an opening;
isotropically etching a portion of the sacrificial layer exposed through the opening of the photoresist mask to form an undercut region in the sacrificial layer below the photoresist mask, wherein the undercut region defines an overhang structure;
anisotropically etching a portion of the sacrificial layer exposed through the opening of the photoresist mask to form an opening through the sacrificial layer down to the substrate;
depositing metallic material to cover the photoresist mask and to at least partially fill the opening formed in the sacrificial layer without coating the overhang structure with metallic material; and
dissolving the sacrificial layer to lift-off the metallic material covering the photoresist mask.

2. The method of claim 1 , wherein the sacrificial layer comprises a DBARC (developer-soluble bottom anti-reflective coating) material.

3. The method of claim 1 , wherein isotropically etching a portion of the sacrificial layer exposed through the opening of the photoresist mask comprises isotropically etching a portion of the sacrificial layer using a developer solution which is utilized during a development of a layer of photoresist material to form the photoresist mask.

4. The method of claim 1 , wherein forming the sacrificial layer on the substrate comprises forming a first sacrificial layer on the substrate and forming a second sacrificial layer on the first sacrificial layer;
wherein anisotropically etching a portion of the sacrificial layer comprises etching an opening through the second and first sacrificial layers down to the substrate; and
wherein isotropically etching a portion of the sacrificial layer comprises laterally etching exposed sidewall surfaces of the first sacrificial layer to undercut the second sacrificial layer and photoresist mask.

5. The method of claim 4 , wherein the first sacrificial layer comprises a DBARC (developer-soluble bottom anti-reflective coating) material, and wherein the second sacrificial layer comprises an ARC (anti-reflection coating) material.

6. The method of claim 1 , wherein forming the sacrificial layer on the substrate comprises forming a first sacrificial layer on the substrate and forming a second sacrificial layer on the first sacrificial layer;
wherein the first sacrificial layer comprises a DBARC (developer-soluble bottom anti-reflective coating) material,
wherein the second sacrificial layer comprises a photopatternable DBARC material.

7. The method of claim 6 , further comprising:
photolithographically patterning the second sacrificial layer concurrently with forming the photoresist mask to extend the opening of the photoresist mask through the second sacrificial layer;
wherein anisotropically etching a portion of the sacrificial layer comprises etching an opening through the first sacrificial layer down to the substrate using the photoresist mask and pattered second sacrificial layer as an etch mask; and
wherein isotropically etching a portion of the sacrificial layer comprises laterally etching exposed sidewall surfaces of the first sacrificial layer to undercut the second sacrificial layer and photoresist mask.

8. The method of claim 1 , wherein forming the sacrificial layer on the substrate comprises forming a first sacrificial layer on the substrate and forming a second sacrificial layer on the first sacrificial layer, wherein the first sacrificial layer comprises a DBARC (developer-soluble bottom anti-reflective coating) material, and wherein the second sacrificial layer comprises a photopatternable DBARC material;
wherein the method further comprises forming a hard mask layer between the second sacrificial layer and the photoresist mask.

9. The method of claim 8 , wherein the hard mask layer comprises silicon-ARC (anti-reflection coating) material.

10. The method of claim 8 , further comprising:
etching the hard mask layer to transfer the opening of the photoresist mask to the hard mask layer;
wherein anisotropically etching a portion of the sacrificial layer comprises etching an opening through the second and first sacrificial layers down to the substrate, which corresponds to the openings in the hard mask layer and the photoresist mask; and
wherein isotropically etching a portion of the sacrificial layer comprises laterally etching exposed sidewall surfaces of the first sacrificial layer to undercut the second sacrificial layer and photoresist mask.

Assignees

• IBM

Inventors

• Cohen Guy M
• Engelmann Sebastian U
• Holmes Steve
• Patel Jyotica V

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P76/202

  for lift-off processes · CPC title