Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9728441-B2
Application number	US-201514844845-A
Country	US
Kind code	B2
Filing date	Sep 3, 2015
Priority date	Apr 4, 2013
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A method for manufacturing a semiconductor device includes: bonding at least a part of the rear surface of a semiconductor wafer, and a supporting substrate in use of using a silane coupling agent; forming a functional structure on a front surface of the semiconductor wafer; placing a condensation point of laser light transmitted through the semiconductor wafer on a bonding interface between the semiconductor wafer and the supporting substrate, and irradiating the bonding interface with the laser light, thereby forming a fracture layer on at least a part of an outer circumferential section of the bonding interface; separating the bonding interface; and carrying out rear surface processing on the rear surface of the semiconductor wafer.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising:
bonding a part of a rear surface of a semiconductor wafer and a supporting substrate to each other using a silane coupling agent, thereby forming a bonding interface between the semiconductor wafer and the supporting substrate;
forming a functional structure on a front surface of the semiconductor wafer;
forming a fracture layer on a part of an outer circumferential section of the bonding interface by irradiating the bonding interface with a laser light having a condensation point positioned on the bonding interface;
separating the fracture layer;
separating the semiconductor wafer and the supporting substrate from each other along the bonding interface; and
carrying out rear surface processing on the rear surface of the semiconductor wafer.

2. The method for manufacturing a semiconductor device according to claim 1 , further comprising:
bonding a ring-shaped supporting substrate to an outer circumference region of the front surface of the semiconductor wafer, where the functional structure is not formed, before the carrying out rear surface processing.

3. The method for manufacturing a semiconductor device according to claim 2 , wherein the bonding of the ring-shaped supporting substrate is performed using a silane coupling agent.

4. The method for manufacturing a semiconductor device according to claim 3 , wherein voids are present in the bonding interface between the semiconductor wafer and the supporting substrate.

5. The method for manufacturing a semiconductor device according to claim 4 , wherein the irradiating the bonding interface is performed by irradiating with the laser light in a direction perpendicular to the bonding interface.

6. The method for manufacturing a semiconductor device according to claim 4 , wherein the irradiating the bonding interface is performing by irradiating with the laser light from a position lateral to a side surface of the semiconductor wafer to which the supporting substrate has been bonded.

7. The method for manufacturing a semiconductor device according to claim 6 , wherein the semiconductor wafer is a wafer selected from a Si wafer, a SiC wafer and a GaN wafer.

8. The method for manufacturing a semiconductor device according to claim 7 , wherein the supporting substrate is any substrate selected from a high-thermal-resistance glass, a Si wafer, a Si wafer having a SiO 2 layer on a surface thereof, and a SiC wafer.

9. The method for manufacturing a semiconductor device according to claim 8 , wherein the silane coupling agent is at least one silane selected from a vinyl silane, epoxy silane, styryl silane, methacrylic silane, acryl silane, amino silane, ureide silane, mercapto silane, sulfide silane, and isocyanate silane.

10. The method for manufacturing a semiconductor device according to claim 9 , wherein a thickness of the semiconductor wafer before the carrying out rear surface processing is less than 300 μm when a wafer diameter is 6 inches, and is less than 400 μm when a wafer diameter is 8 inches.

11. The method for manufacturing a semiconductor device according to claim 1 , wherein voids are present in the bonding interface between the semiconductor wafer and the supporting substrate.

12. The method for manufacturing a semiconductor device according to claim 1 , wherein the irradiating the bonding interface is performing by irradiating with the laser light from a position lateral to a side surface of the semiconductor wafer to which the supporting substrate has been bonded.

13. The method for manufacturing a semiconductor device according to claim 1 , wherein the irradiating the bonding interface is performed by irradiating with the laser light in a direction perpendicular to the bonding interface.

14. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor wafer is a wafer selected from a Si wafer, a SiC wafer and a GaN wafer.

15. The method for manufacturing a semiconductor device according to claim 1 , wherein the supporting substrate is any substrate selected from a high-thermal-resistance glass, a Si wafer, a Si wafer having a SiO 2 layer on a surface thereof, and a SiC wafer.

16. The method for manufacturing a semiconductor device according to claim 1 , wherein the silane coupling agent is at least one silane selected from a vinyl silane, epoxy silane, styryl silane, methacrylic silane, acryl silane, amino silane, ureide silane, mercapto silane, sulfide silane, and isocyanate silane.

17. The method for manufacturing a semiconductor device according to claim 1 , wherein a thickness of the semiconductor wafer before the carrying out rear surface processing is less than 300 μm when a wafer diameter is 6 inches, and is less than 400 μm when a wafer diameter is 8 inches.

18. The method for manufacturing a semiconductor device according to claim 1 , wherein in the forming the fracture layer, the fracture layer formed is weaker in mechanical strength than the semiconductor wafer.

19. The method for manufacturing a semiconductor device according to claim 18 , wherein the separating the fracture layer the interface is performed by pulling a portion of the semiconductor wafer on the fracture layer and a portion of the supporting substrate on the fracture layer away from each other to cause the fracture layer to fracture.

Assignees

• Fuji Electric Co Ltd

Inventors

• Tachioka Masaaki
• Nakajima Tsunehiro

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1924

  with separation/delamination along a porous layer · CPC title

• H10P90/1916

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10P90/1914

  using bonding · CPC title

• H10P72/7412

  the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support · CPC title