Display device including a COA substrate having a photoresist plug on an ITO film

US9726956B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9726956-B2
Application numberUS-201514908080-A
CountryUS
Kind codeB2
Filing dateDec 28, 2015
Priority dateOct 23, 2015
Publication dateAug 8, 2017
Grant dateAug 8, 2017

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A COA substrate manufacturing method including: forming a TFT on a base substrate; forming a second insulation layer on the TFT; forming a color resist layer on the second insulation layer; forming a third insulation layer on the color resist layer; forming a through hole which reveals the drain electrode of the TFT; forming an ITO film layer on the third insulation layer; forming a photoresist layer on the ITO film layer; performing a light-shielding process to the photoresist layer on the vias-region ITO film layer and an exposure process to the photoresist layer on the non vias-region ITO film layer; developing the photoresist layer on the vias-region ITO and the non vias-region ITO film layers to obtain a photoresist layer plug covered on the vias-region ITO film layer. The present invention utilizes the photoresist to fill the through hole which can improve the quality of a display device.

First claim

Opening claim text (preview).

What is claimed is: 1. A display device including a Color Filter on Array (COA) substrate comprising: a base substrate; a thin-film transistor disposed on the base substrate, wherein the thin-film transistor includes a first metal layer disposed on the base substrate, a first insulation layer disposed on the first metal layer, a semiconductor active layer disposed on the first insulation layer and a second metal layer disposed on the semiconductor active layer, and wherein the second metal layer forms a drain electrode of the thin-film transistor; a second insulation layer disposed on the thin-film transistor, a color resist layer disposed on the second insulation layer; a third insulation layer disposed on the color resist layer and at least one through hole which exposes the drain electrode of the thin-film transistor, and sequentially passes through the third insulation layer, the color resist layer and the second insulation layer; wherein, the COA substrate further includes: a ITO film layer disposed on the third insulation layer, wherein the ITO film layer includes a vias-region ITO film layer located on and attached in the through hole and a trace-region ITO film layer located adjacent to and outside the through hole; and a photoresist layer plug only covered on the vias-region ITO film layer, wherein, the photoresist layer plug is contacted with liquid crystals near the photoresist layer plug. 2. The display device according to claim 1 , wherein the photoresist layer plug includes a plug portion and a protrusion portion, the plug portion is filled in the through hole, and the protrusion portion is protruded out from the through hole. 3. The display device according to claim 2 , wherein the protrusion portion includes a horizontal plane in parallel with the base substrate and a side plane perpendicular to the base substrate such that a tilting direction of the liquid crystals is unchanged. 4. The display device according to claim 2 , wherein the protrusion portion includes a horizontal plane in parallel with the base substrate and a side plane forming an inclined angle with respect to the base substrate. 5. The display device according to claim 4 , wherein the inclined angle formed between the side plane and the base substrate is less than 30 degrees.

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What does patent US9726956B2 cover?
A COA substrate manufacturing method including: forming a TFT on a base substrate; forming a second insulation layer on the TFT; forming a color resist layer on the second insulation layer; forming a third insulation layer on the color resist layer; forming a through hole which reveals the drain electrode of the TFT; forming an ITO film layer on the third insulation layer; forming a photoresist…
Who is the assignee on this patent?
Shenzhen China Star Optoelect, Shenzhen China Star Optoelect
What technology area does this patent fall under?
Primary CPC classification G02F1/136227. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 08 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).