Display substrate and method of manufacturing the same
US-2015137127-A1 · May 21, 2015 · US
US9726956B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9726956-B2 |
| Application number | US-201514908080-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 28, 2015 |
| Priority date | Oct 23, 2015 |
| Publication date | Aug 8, 2017 |
| Grant date | Aug 8, 2017 |
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A COA substrate manufacturing method including: forming a TFT on a base substrate; forming a second insulation layer on the TFT; forming a color resist layer on the second insulation layer; forming a third insulation layer on the color resist layer; forming a through hole which reveals the drain electrode of the TFT; forming an ITO film layer on the third insulation layer; forming a photoresist layer on the ITO film layer; performing a light-shielding process to the photoresist layer on the vias-region ITO film layer and an exposure process to the photoresist layer on the non vias-region ITO film layer; developing the photoresist layer on the vias-region ITO and the non vias-region ITO film layers to obtain a photoresist layer plug covered on the vias-region ITO film layer. The present invention utilizes the photoresist to fill the through hole which can improve the quality of a display device.
Opening claim text (preview).
What is claimed is: 1. A display device including a Color Filter on Array (COA) substrate comprising: a base substrate; a thin-film transistor disposed on the base substrate, wherein the thin-film transistor includes a first metal layer disposed on the base substrate, a first insulation layer disposed on the first metal layer, a semiconductor active layer disposed on the first insulation layer and a second metal layer disposed on the semiconductor active layer, and wherein the second metal layer forms a drain electrode of the thin-film transistor; a second insulation layer disposed on the thin-film transistor, a color resist layer disposed on the second insulation layer; a third insulation layer disposed on the color resist layer and at least one through hole which exposes the drain electrode of the thin-film transistor, and sequentially passes through the third insulation layer, the color resist layer and the second insulation layer; wherein, the COA substrate further includes: a ITO film layer disposed on the third insulation layer, wherein the ITO film layer includes a vias-region ITO film layer located on and attached in the through hole and a trace-region ITO film layer located adjacent to and outside the through hole; and a photoresist layer plug only covered on the vias-region ITO film layer, wherein, the photoresist layer plug is contacted with liquid crystals near the photoresist layer plug. 2. The display device according to claim 1 , wherein the photoresist layer plug includes a plug portion and a protrusion portion, the plug portion is filled in the through hole, and the protrusion portion is protruded out from the through hole. 3. The display device according to claim 2 , wherein the protrusion portion includes a horizontal plane in parallel with the base substrate and a side plane perpendicular to the base substrate such that a tilting direction of the liquid crystals is unchanged. 4. The display device according to claim 2 , wherein the protrusion portion includes a horizontal plane in parallel with the base substrate and a side plane forming an inclined angle with respect to the base substrate. 5. The display device according to claim 4 , wherein the inclined angle formed between the side plane and the base substrate is less than 30 degrees.
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