Semiconductor device including a MEMS die and a conductive layer

Patent metadata

Field	Value
Publication number	US-9725303-B1
Application number	US-201615071882-A
Country	US
Kind code	B1
Filing date	Mar 16, 2016
Priority date	Mar 16, 2016
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A semiconductor device includes a microelectromechanical system (MEMS) die, an encapsulation material, a via element, a non-conductive lid, and a conductive layer. The encapsulation material laterally surrounds the MEMS die. The via element extends through the encapsulation material. The non-conductive lid is over the MEMS die and defines a cavity. The conductive layer is over the MEMS die and the encapsulation material and is electrically coupled to the via element.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a microelectromechanical system (MEMS) die;
an encapsulation material laterally surrounding the MEMS die;
a conductive via element extending through the encapsulation material;
a non-conductive lid over the MEMS die, the lid defining a cavity;
a conductive layer over the MEMS die and the encapsulation material, the conductive layer electrically coupled to the conductive via element, and
wherein the conductive layer is directly attached to the via element, the encapsulation material, and the MEMS die.

2. The semiconductor device of claim 1 , wherein the conductive layer comprises an opening over a membrane of the MEMS die.

3. The semiconductor device of claim 1 , wherein the conductive layer comprises a plurality of openings over a membrane of the MEMS die.

4. The semiconductor device of claim 1 , wherein the conductive layer is directly attached to an entire inner surface of the lid.

5. The semiconductor device of claim 1 , wherein the conductive layer comprises a conductive tape.

6. A semiconductor device comprising:
a microelectromechanical system (MEMS) die;
an encapsulation material laterally surrounding the MEMS die;
a via element extending through the encapsulation material;
a non-conductive lid over the MEMS die, the lid defining a cavity;
a conductive layer over the MEMS die and the encapsulation material, the conductive layer electrically coupled to the via element,
wherein the conductive layer is attached to an inner surface of the lid,
wherein the lid comprises a through-hole, and
wherein the conductive layer extends over the through-hole.

7. A semiconductor device comprising:
a microelectromechanical system (MEMS) die;
an encapsulation material laterally surrounding the MEMS die;
a via element extending through the encapsulation material;
a non-conductive lid over the MEMS die, the lid defining a cavity;
a conductive layer over the MEMS die and the encapsulation material, the conductive layer electrically coupled to the via element, and

wherein the conductive layer is directly attached to an entire outer surface of the lid.

8. A semiconductor device comprising:
a microelectromechanical system (MEMS) die comprising a membrane;
an integrated circuit die;
an encapsulation material laterally surrounding the MEMS die and the integrated circuit die;
a conductive via element extending through the encapsulation material;
a non-conductive lid over the MEMS die and the integrated circuit die, the lid defining a cavity; and
a conductive layer over the MEMS die, the integrated circuit die, and the encapsulation material, the conductive layer electrically coupled to the conductive via element and directly attached to the MEMS die.

9. The semiconductor device of claim 8 , wherein the conductive layer provides electromagnetic shielding for the MEMS die.

10. The semiconductor device of claim 8 , further comprising:
a redistribution layer electrically coupled and directly attached to the MEMS die, the integrated circuit die, and the via element.

11. The semiconductor device of claim 8 , wherein the non-conductive lid comprises an encapsulation material.

12. The semiconductor device of claim 8 , wherein the MEMS die comprises a microphone.

13. The semiconductor device of claim 12 , wherein the cavity provides a back volume for the microphone.

14. A method for fabricating a semiconductor device, the method comprising:
encapsulating a microelectromechanical system (MEMS) die and a via element with an encapsulation material;
electrically coupling a conductive layer to the via element, the conductive layer to electromagnetically shielding the MEMS die;
attaching a non-conductive lid over the MEMS die,
attaching the conductive layer to the non-conductive lid prior to attaching the lid over the MEMS die, and
wherein attaching the conductive layer to the non-conductive lid comprises deep-drawing a conductive tape over the non-conductive lid.

15. The method of claim 14 , wherein attaching the conductive layer to the non-conductive lid comprises attaching the conductive layer to an inner surface of the non-conductive lid.

16. The method of claim 14 , wherein attaching the conductive layer to the non-conductive lid comprises attaching the conductive layer to an outer surface of the non-conductive lid.

17. The method of claim 14 , further comprising:
attaching the conductive layer to the MEMS die and the encapsulation material, the conductive layer comprising at least one opening over a membrane of the MEMS die.

Assignees

• Infineon Technologies Ag

Inventors

• Maier Dominic
• Muehlbauer Franz-Xaver
• Kilger Thomas

Classifications

• B81B7/0064 Primary

  for protecting against electromagnetic or electrostatic interferences · CPC title

• B81B2207/095

  through the lid · CPC title

• B81B2207/012

  the micromechanical device and the control or processing electronics being separate parts in the same package · CPC title

• H04R2201/003

  Mems transducers or their use · CPC title

• B81B2201/0257

  Microphones or microspeakers · CPC title