Target structure and target device
US-11985755-B2 · May 14, 2024 · US
US9723704B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9723704-B2 |
| Application number | US-54020309-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 12, 2009 |
| Priority date | Aug 12, 2008 |
| Publication date | Aug 1, 2017 |
| Grant date | Aug 1, 2017 |
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According to one embodiment, an apparatus includes a pyroelectric crystal, a deuterated or tritiated target, an ion source, and a common support coupled to the pyroelectric crystal, the deuterated or tritiated target, and the ion source. In another embodiment, a method includes producing a voltage of negative polarity on a surface of a deuterated or tritiated target in response to a temperature change of a pyroelectric crystal, pulsing a deuterium ion source to produce a deuterium ion beam, accelerating the deuterium ion beam to the deuterated or tritiated target to produce a neutron beam, and directing the ion beam onto the deuterated or tritiated target to make neutrons using a voltage of the pyroelectric crystal and/or an HGI surrounding the pyroelectric crystal. The directionality of the neutron beam is controlled by changing the accelerating voltage of the system. Other apparatuses and methods are presented as well.
Opening claim text (preview).
What is claimed is: 1. An apparatus, comprising: a pyroelectric crystal; a deuterated or tritiated target; an ion source; and a common support coupled to the pyroelectric crystal, the deuterated or tritiated target, and the ion source. 2. The apparatus of claim 1 , wherein the pyroelectric crystal is formed of a material selected from a group consisting of: lithium tantalite, lithium niobate, and barium strontiate. 3. The apparatus of claim 1 , wherein the support includes a hollow tube having first and second ends, wherein the ion source is near the first end, the pyroelectric crystal is near the second end, and the deuterated or tritiated target is positioned between the ion source and the pyroelectric crystal. 4. The apparatus of claim 3 , wherein the hollow tube is a vacuum tube maintaining a partial vacuum therein. 5. The apparatus of claim 1 , further comprising a thermal altering mechanism for changing a temperature of the pyroelectric crystal. 6. The apparatus of claim 5 , wherein the thermal altering mechanism includes at least one of: a chemical heating pack, a chemical cooling pack, a Peltier heater/cooler, a thermite composition, a resistive heating element, a dielectric fluid system, and a thermoelectric heater/cooler. 7. The apparatus of claim 5 , wherein the thermal altering mechanism raises or lowers a temperature of the pyroelectric crystal by about 10° C. to about 150° C. to produce a voltage of negative polarity on a surface of the deuterated or tritiated target of at least about −100 keV. 8. The apparatus of claim 5 , wherein the thermal altering mechanism raises or lowers a temperature of the pyroelectric crystal by less than about 40° C. to produce a voltage of negative polarity on a surface of the deuterated or tritiated target of at least about −100 keV. 9. The apparatus of claim 1 , further comprising an ion accelerating mechanism. 10. The apparatus of claim 9 , wherein the ion accelerating mechanism includes a pyroelectric stack accelerator having a second thermal altering mechanism for changing a temperature of the pyroelectric stack accelerator. 11. The apparatus of claim 10 , wherein the pyroelectric stack accelerator comprises the pyroelectric crystal formed in a plurality of hollow portions alternating and partially shrouded with high gradient insulator (HGI) portions, wherein the second thermal altering mechanism changes a temperature of the pyroelectric crystal. 12. The apparatus of claim 1 , further comprising a high gradient insulator (HGI) surrounding the pyroelectric crystal, the ion accelerating mechanism, and the deuterated or tritiated target. 13. The apparatus of claim 1 , wherein the ion source is deuterated such that a deuterium ion beam is produced when the ion source is pulsed. 14. The apparatus of claim 13 , wherein the deuterium ion source is pulseable and includes at least one of: a cold cathode gated nanotip array, a nanotube ion source, and a spark source. 15. The apparatus of claim 1 , wherein the deuterated or tritiated target covers at least a portion of at least one side of the pyroelectric crystal. 16. The apparatus of claim 15 , wherein the deuterated or tritiated target has an inverted cone geometry with a focusing tip extending toward the ion source. 17. An apparatus, comprising: a pyroelectric crystal formed of a material selected from a group consisting of: lithium tantalite, lithium niobate, and barium strontiate; a pulseable deuterium ion source including at least one of: a cold cathode gated nanotip array, a nanotube ion source, and a spark source; a deuterated or tritiated target covering at least a portion of at least one side of the pyroelectric crystal, the deuterated or tritiated target having an inverted cone geometry with a focusing tip extending toward the pulseable deuterium ion source; a thermal altering mechanism for changing a temperature of the pyroelectric crystal including at least one of: a chemical heating pack, a chemical cooling pack, and a Peltier heater/cooler; a high gradient insulator (HGI) surrounding the pyroelectric crystal and the deuterated or tritiated target; and a common support coupled to the pyroelectric crystal, the deuterated or tritiated target, and the pulseable deuterium ion source, wherein the support includes a hollow tube having first and second ends, wherein the pulseable deuterium ion source is near the first end, the pyroelectric crystal is near the second end, and the deuterated or tritiated target is positioned between the pulseable deuterium ion source and the pyroelectric crystal. 18. The apparatus of claim 17 , wherein the thermal altering mechanism raises or lowers a temperature of the pyroelectric crystal by less than about 40° C. to produce a voltage of negative polarity on a surface of the deuterated or tritiated target of at least about −100 keV. 19. The apparatus of claim 17 , wherein the hollow tube is a vacuum tube maintaining a partial vacuum therein. 20. A method for producing a directed neutron beam, the method comprising: producing a voltage of negative polarity of at least −100 keV on a surface of a deuterated or tritiated target in response to a temperature change of a pyroelectric crystal of less than about 40° C., the pyroelectric crystal having the deuterated or tritiated target coupled thereto; pulsing a deuterium ion source to produce a deuterium ion beam; accelerating the deuterium ion beam to the deuterated or tritiated target to produce a neutron beam; and directing the ion beam onto the deuterated or tritiated target to make neutrons using at least one of a voltage of the pyroelectric crystal, and a high gradient insulator (HGI) surrounding the pyroelectric crystal, wherein the directionality of the neutron beam is controlled by changing an accelerating voltage of the system. 21. The method of claim 20 , wherein the pyroelectric crystal is formed of a material selected from a group consisting of: lithium tantalite, lithium niobate, and barium strontiate. 22. The method of claim 20 , wherein accelerating the deuterium ion beam is achieved by using an ion accelerating mechanism, which includes a pyroelectric stack accelerator having a thermal altering mechanism for changing a temperature of the pyroelectric stack accelerator. 23. The method of claim 20 , wherein the deuterium ion source includes at least one of: a cold cathode gated nanotip array, a nanotube ion source, and a spark source. 24. The method of claim 20 , wherein the temperature change of the pyroelectric crystal is at least partially caused by at least one of: a chemical heating pack, a chemical cooling pack, a Peltier heater/cooler, a thermite composition, a resistive heating element, a dielectric fluid system, and a thermoelectric heater/cooler. 25. The method of claim 20 , wherein the deuterated or tritiated target covers at least a portion of at least one side of the pyroelectric crystal. 26. The method of claim 25 , wherein the deuterated or tritiated target has an inverted cone geometry with a focusing tip extending toward the deuterium ion source. 27. A method for producing neutrons, the method comprising: triggering a raising or a lowering of a temperature of a pyroelectric crystal of less than about 40° C. to produce a voltage of negative polarity of at least −100 keV on a surface of a deuterated or tritiated target coupled thereto, wherein a deuterium ion sou
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