Single-chip bridge-type magnetic field sensor and preparation method thereof

Patent metadata

Field	Value
Publication number	US-9722175-B2
Application number	US-201514836256-A
Country	US
Kind code	B2
Filing date	Aug 26, 2015
Priority date	Apr 6, 2011
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.

First claim

What is claimed is:

1. A method to make a single-chip half-bridge magnetic field sensor, comprising:
interconnecting one or more GMR or MTJ sensing elements electrically in series to produce a sensor arm, wherein the half-bridge sensor comprises two sensor arms respectively;
interconnecting the two sensor arms electrically to form a half-bridge, wherein each of the MTJ or GMR magnetoresistive sensing elements in the two sensor arms have pinning layers with a same pinned magnetization direction; and
patterning the one or more GMR or MTJ magnetoresistive sensing elements for each of the two sensor arms into a shape that has a magnetic easy axis, wherein a magnetization direction of a free layer points into a direction of the easy axis of each of the patterned magnetoresistive sensing elements, the method further comprising using biasing means to bias the magnetization direction for a first one of the two sensor arms in a first direction and bias the magnetization direction for a second one of the two sensor arms in a second direction, wherein the two sensor arms have free layers with magnetization directions that have an angle with respect to the pinned magnetization direction that are equal in absolute value and opposite in polarity, and wherein the biasing means are selected from a group of biasing means consisting of:
permanent magnets;
a magnetic field from electric current flowing through a conductor;
Neel coupling between the free layer and the pinning layers; and
a magnetic layer on top of the free layer.

2. The method of claim 1 , wherein the biasing means includes permanent magnets, the method further comprising utilizing the permanent magnets to bias the magnetization direction of the free layer of the one or more GMR or MTJ magnetoresistive sensing elements.

3. The method of claim 1 , wherein the biasing means includes the magnetic field from the electric current, the method further comprising integrating the conductor through which the electric current flows in order to produce the magnetic field to bias the magnetization direction of the free layer, wherein the electric current flows in the same direction as the magnetization direction of the pinning layer of the one or more MTJ or GMR magnetoresistive sensing elements.

4. The method of claim 1 , wherein the biasing means includes the Neel coupling between the free layer and the pinning layers that biases the magnetization direction of the free layer.

5. The method of claim 1 , wherein the biasing means includes the magnetic layer on top of the free layer, the method further comprising depositing the magnetic layer on top of the free layer, wherein a weak antiferromagnetic coupling between the magnetic layer and the free layer biases the magnetization direction of the free layer.

6. The method of claim 1 , wherein patterning includes patterning the one or more GMR or MTJ magnetoresistive sensing elements into an elliptical shape.

7. The method of claim 1 , wherein patterning includes patterning the one or more GMR or MTJ magnetoresistive sensing elements into a rectangular shape.

8. The method of claim 1 , wherein patterning includes patterning the one or more GMR or MTJ magnetoresistive sensing elements into a diamond shape.

9. A method to make a single-chip half-bridge magnetic field sensor, comprising:
forming two sensor arms and electrically connecting the two sensor arms to form a half-bridge, each of the two sensor arms including at least one magnetoresistive sensing element, each magnetoresistive sensing element including an MTJ or GMR magnetoresistive sensing element, each magnetoresistive sensing element having a pinning layer with a pinning magnetization direction, wherein all magnetoresistive sensing elements have a same pinning magnetization direction, each magnetoresistive sensing element having a free layer and being patterned with a shape to provide shape anisotropy to provide the free layer with an easy axis, wherein a first one of the two sensor arms includes at least one magnetoresistive sensing element with the easy axis at a first angle with respect to the pinning magnetization direction and a second one of the two sensor arms includes at least one magnetoresistive sensing element with the easy axis at a second angle with respect to the pinning magnetization direction, the method further comprising using biasing means to bias the magnetization direction for a first one of the two sensor arms in a first direction and bias the magnetization direction for a second one of the two sensor arms in a second direction, the first and second angles having equal absolute values and opposite polarities, and wherein the biasing means are selected from a group of biasing means consisting of:
permanent magnets;
a magnetic field from electric current flowing through a conductor;
Neel coupling between the free layer and the pinning layers; and
a magnetic layer on top of the free layer.

10. The method of claim 9 , wherein the shape includes an elliptical shape.

11. The method of claim 9 , wherein the shape includes a rectangular shape.

12. The method of claim 9 , wherein the shape includes a diamond shape.

13. The method of claim 9 , wherein the biasing means includes permanent magnets, the method further comprising using the permanent magnets to bias the magnetization direction of the free layer.

14. The method of claim 9 , wherein the biasing means includes the magnetic field from the electric current, the method further comprising integrating the conductor through which the electric current flows in order to produce the magnetic field to bias the magnetization direction of the free layer, wherein the electric current flows in the same direction as the pinning magnetization direction.

15. The method of claim 9 , wherein the biasing means includes the Neel coupling between the free layer and the pinning layer that biases the magnetization direction of the free layer.

16. The method of claim 9 , wherein the biasing means includes the magnetic layer on top of the free layer, the method further comprising depositing the magnetic layer on top of the free layer, wherein a weak antiferromagnetic coupling between the magnetic layer and the free layer biases the magnetization direction of the free layer.

17. A method to make a single-chip half-bridge magnetic field sensor, comprising:
forming two sensor arms and electrically connecting the two sensor arms to form a half-bridge, each of the two sensor arms including at least one magnetoresistive sensing element, each magnetoresistive sensing element including an MTJ or GMR magnetoresistive sensing element, each magnetoresistive sensing element having a pinning layer with a pinning magnetization direction, wherein all magnetoresistive sensing elements have a same pinning magnetization direction, each magnetoresistive sensing element having a free layer and being patterned with a shape to provide shape anisotropy to provide the free layer with an easy axis, wherein a first one of the two sensor arms includes at least one magnetoresistive sensing element with the easy axis in a first direction at a first angle with respect to the pinning magnetization direction and a second one of the two sensor arms includes at least one magnetoresistive sensing element with the easy axis in a second direction at a second angle with respect to the pinning magnetization direction, the method further comprising using permanent magnets to bias the magnetization direction for a first one of the two sensor arms in the first direction and bias the magnetization direction for a second one of the two

Assignees

• Multidimension Technology Co Ltd

Inventors

• Lei Xiaofeng
• Jin Insik
• Deak James Geza
• Shen Weifeng
• Liu Mingfeng
• Xue Songsheng

Classifications

• G01R33/093

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G11B5/3909

  Arrangements using a magnetic tunnel junction · CPC title

• G01R33/0052

  Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• G11B5/3993

  in semi-conductors · CPC title