Conversion of metal seed layer for buffer material

Patent metadata

Field	Value
Publication number	US-9722105-B2
Application number	US-201414229473-A
Country	US
Kind code	B2
Filing date	Mar 28, 2014
Priority date	Mar 28, 2014
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

Approaches for forming solar cells with a converted seed layer as a buffer material and the resulting solar cells are described. In an example, a method of fabricating a solar cell includes converting regions of a seed layer disposed on a plurality of p-n junctions of the solar cell to form a pattern of interdigitated converted regions. The converted regions are configured to electrically insulate non-converted regions of the seed layer from each other and provide a barrier to a laser that is, in fabricating the solar cell, directed towards the seed layer such that the barrier substantially avoids degradation of at least the plurality of p-n junctions from the laser.

First claim

What is claimed is:

1. A method of fabricating a solar cell, the method comprising:
forming a metal seed layer over a substrate comprising p-n junctions;
converting regions of the metal seed layer over the p-n junctions to a metal oxide, wherein the metal oxide has a porous structure; and
forming conductive contacts for the solar cell from unconverted regions of the metal seed layer.

2. The method of claim 1 , wherein forming the metal seed layer comprises forming an aluminum seed layer, and wherein converting the regions of the metal seed layer comprises converting the regions to aluminum oxide.

3. The method of claim 1 , wherein forming conductive contacts for the solar cell further comprises:
forming a second metal layer over the metal seed layer; and
patterning the second metal layer over the converted metal oxide regions with a laser to form the conductive contacts.

4. The method of claim 3 , wherein:
forming the second metal layer comprises placing an aluminum sheet over the substrate and bonding the aluminum sheet to the metal seed layer.

5. The method of claim 4 , wherein bonding the aluminum sheet to the metal seed layer comprises laser welding the aluminum sheet.

6. The method of claim 3 , further comprising:
applying a coating that absorbs or reflects radiation from the laser to the converted metal oxide regions.

7. The method of claim 1 , wherein converting the regions of the metal seed layer over the p-n junctions to the metal oxide comprises:
direct writing the regions with a laser in an atmosphere comprising oxygen.

8. The method of claim 1 , wherein converting the regions of the metal seed layer over the p-n junctions to the metal oxide comprises:
applying an oxidizing coating to the metal seed layer; and
direct writing the oxidizing coating over the regions with a laser.

9. The method of claim 1 , wherein converting the regions of the metal seed layer over the p-n junctions to the metal oxide comprises:
forming a patterned mask over the metal seed layer, wherein the patterned mask comprises an oxidizing material, and wherein the patterned mask covers the regions of the metal seed layer to be converted; and
heating the metal seed layer after forming the patterned mask over the metal seed layer.

10. The method of claim 1 , wherein converting the regions of the metal seed layer over the p-n junctions to the metal oxide comprises:
forming a patterned mask over the metal seed layer, the patterned mask leaving the regions of the metal seed layer to be converted uncovered; and
exposing the uncovered regions of the metal seed layer to an oxidizing solution.

11. The method of claim 10 , further comprising:
heating the oxidizing solution while the exposing the uncovered regions of the metal seed layer.

12. The method of claim 10 , further comprising:
anodizing the uncovered regions of the metal seed layer.

13. The method of claim 12 , further comprising:
dying the converted metal oxide regions with a dye that absorbs or reflects radiation from the laser.

14. The method of claim 1 , wherein:
the substrate comprises a monocrystalline silicon substrate with p-type and n-type doped polycrystalline silicon regions disposed above the monocrystalline silicon substrate forming the p-n junctions; and
the metal seed layer is disposed over the polycrystalline silicon regions.

15. The method of claim 1 , wherein:
the substrate comprises a monocrystalline silicon substrate comprising p-type and n-type doped regions forming the p-n junctions; and
the metal seed layer is disposed over the doped regions of the monocrystalline silicon substrate.

16. A method of fabricating a solar cell, the method comprising:
forming an aluminum seed layer over a substrate comprising p-n junctions, the substrate comprising a monocrystalline silicon substrate with p-type and n-type doped polycrystalline silicon regions disposed above the monocrystalline silicon substrate forming the p-n junctions;
converting regions of the aluminum seed layer over the p-n junctions to an aluminum oxide, wherein the aluminum oxide has a porous structure; and
forming conductive contacts for the solar cell from unconverted regions of the aluminum seed layer.

17. The method of claim 16 , wherein forming conductive contacts for the solar cell further comprises:
forming a second metal layer over the aluminum seed layer; and
patterning the second metal layer over the converted aluminum oxide regions with a laser to form the conductive contacts.

18. The method of claim 17 , wherein:
forming the second metal layer comprises placing an aluminum sheet over the substrate and bonding the aluminum sheet to the aluminum seed layer.

19. The method of claim 18 , wherein bonding the aluminum sheet to the aluminum seed layer comprises laser welding the aluminum sheet.

20. The method of claim 17 , further comprising:
applying a coating that absorbs or reflects radiation from the laser to the converted aluminum oxide regions.

Assignees

• Moors Matthieu
• Pass Thomas
• Sunpower Corp
• Total Marketing Services

Inventors

• Moors Matthieu
• Pass Thomas

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/022441 Primary

  Electricity · mapped topic

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F10/10

  having potential barriers · CPC title

• H10F77/169

  Thin semiconductor films on metallic or insulating substrates · CPC title