Solar cell and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9722104-B2
Application number	US-201514953264-A
Country	US
Kind code	B2
Filing date	Nov 27, 2015
Priority date	Nov 28, 2014
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

Disclosed are a solar cell and a method for manufacturing the same. A solar cell includes a semiconductor substrate, a tunnel layer on the first surface of the semiconductor substrate, a first conductive type semiconductor region on the tunnel layer and includes impurities of a first conductive type, a second conductive type semiconductor region on a second surface and includes impurities of a second conductive type opposite the first conductive type, a first passivation film on the first conductive type semiconductor region, a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening portion formed in the first passivation film, a second passivation film on the second conductive type semiconductor region, and a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening portion formed in the second passivation film.

First claim

What is claimed is:

1. A solar cell, comprising:
a semiconductor substrate;
a tunnel layer on a first surface of the semiconductor substrate;
a first conductive type semiconductor region on the tunnel layer and containing impurities of a first conductive type;
a second conductive type semiconductor region on a second surface opposite to the first surface of the semiconductor substrate and containing impurities of a second conductive type opposite to the first conductive type;
a first passivation film on the first conductive type semiconductor region;
a first electrode formed on the first passivation film and connected to the first conductive type semiconductor region through an opening formed in the first passivation film;
a second passivation film on the second conductive type semiconductor region;
a second electrode formed on the second passivation film and connected to the second conductive type semiconductor region through an opening formed in the second passivation film; and
an isolation portion for preventing a contact between the first conductive type semiconductor region and the second conductive type semiconductor region,
wherein the isolation portion excludes the tunnel layer and the first conductive type semiconductor region, and is in an edge portion of the first surface of the semiconductor substrate, and
wherein the first passivation film covers the first surface of the semiconductor substrate and the isolation portion together.

2. The solar cell of claim 1 , wherein the first electrode comprises a plurality of first finger electrodes spaced apart from each other and extended in parallel in a first direction, and
the second electrode comprises a plurality of second finger electrodes spaced apart from each other and extended in parallel in the first direction.

3. The solar cell of claim 2 , wherein the first electrode further comprises a first bus bar connected to the plurality of first finger electrodes, and
the second electrode further comprises a second bus bar connected to the plurality of second finger electrodes.

4. The solar cell of claim 1 , wherein the first conductive type semiconductor region includes a polycrystalline silicon material, and
the second conductive type semiconductor region includes a single crystal silicon material.

5. The solar cell of claim 1 , wherein a width of the isolation portion is 1 nm to 1 mm.

6. The solar cell of claim 1 , wherein a thickness of an edge region in the first conductive type semiconductor region progressively decreases towards the isolation portion.

7. The solar cell of claim 1 , wherein the first passivation film comprises a side portion extending up a side surface of the semiconductor substrate.

8. The solar cell of claim 7 , wherein the second passivation film comprises a side portion formed on the side surface of the semiconductor substrate, and
the side portion of the first passivation film on the side surface of the semiconductor substrate is on the side portion of the second passivation film.

9. The solar cell of claim 3 , wherein all of the plurality of first finger electrodes and the first bus bar are connected to the first conductive type semiconductor region through the first passivation film.

10. The solar cell of claim 9 , wherein all of the plurality of first finger electrodes and the first bus bar have a single layer or double layer structure.

11. The solar cell of claim 9 , wherein:
the plurality of first finger electrodes have a single layer structure, and
the first bus bar has a double layer structure.

Assignees

• Lg Electronics Inc

Inventors

• Ha Jungmin
• Kim Sungjin
• Cheong Juhwa
• Ahn Junyong
• Choi Hyungwook
• Chang Wonjae
• Kim Jaesung

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H10F71/133

  Providing edge isolation · CPC title

• H10F10/14

  Photovoltaic cells having only PN homojunction potential barriers · CPC title

• H10F10/165

  the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells · CPC title

• H01L31/077

  Electricity · mapped topic