Method for forming a glass substrate with a depleted surface layer and polycrystalline-silicon TFT built thereon

Patent metadata

Field	Value
Publication number	US-9722084-B2
Application number	US-201414787394-A
Country	US
Kind code	B2
Filing date	Apr 25, 2014
Priority date	Apr 30, 2013
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

There is disclosed a method for chemically treating a display glass substrate by treating at least one surface of the glass substrate with a heated solution containing HCl to form a depletion layer at the surface and under the surface of the glass substrate. The disclosure also relates to display glass substrates containing the depletion layer made by the disclosed process. In addition, the disclosure relates to methods of making thin-film transistors (“TFTs”) on these display glass substrates by depositing a Si layer directly on the chemically treated surface of the glass substrate, and annealing the Si layer to form polycrystalline silicon.

First claim

What is claimed is:

1. A method of chemically treating the surface layer of a glass substrate, said method comprising:
contacting at least one surface of the substrate with a heated solution comprising HCl for a time and at a temperature sufficient to leach at least one element from a surface layer below the surface of the glass substrate; and
wherein the surface roughness of the glass substrate is substantially the same before and after the contacting step;
wherein the at least one element is chosen from the group consisting of alkaline earth metals, boron, aluminum, and metallic contaminants; and
wherein a depth of the surface layer ranges from about 1 nm to about 200 nm.

2. The method of claim 1 , wherein said glass substrate comprises an alkaline earth boroaluminosilicate glass.

3. The method of claim 2 , wherein the at least one element is chosen from the group consisting of Na, K, Mg, Ca, Sr, Ba, Fe, Cu, B, Al, Sn, P, As, Sb, and combinations thereof.

4. The method of claim 2 , wherein the chemically treated glass substrate has a silica enrichment ranging from 4 to 15% after said contacting step.

5. The method of claim 2 , wherein the chemically treated glass substrate has a Si:Al ratio at least 20% higher after said contacting step.

6. The method of claim 1 , wherein the HCl solution has a concentration in a range from 0.1 mole per liter to 2.0 mole per liter.

7. The method of claim 6 , wherein the HCl solution is diluted with a diluent selected from H 2 O or H 2 O 2 .

8. The method of claim 7 , wherein the ratio of HCl to diluent ranges from 1:5 to 1:10.

9. The method of claim 1 , wherein the solution temperature ranges from 40° C. to 80° C.

10. The method of claim 1 , wherein the contacting time ranges from 1 minute to 30 minutes.

11. The method of claim 1 , wherein the substrate is washed and cleaned prior to said contacting step.

12. The method of claim 1 , wherein said contacting step comprises a stagnant soak or an agitated soak.

13. The method of claim 1 , wherein said contacting comprises a horizontal or vertical spray process.

14. The method of claim 1 , further comprising at least one post-leach washing step comprising contacting the chemically treated substrate with heated, deionized water under ultrasonication conditions.

15. The method of claim 14 , wherein the deionized water is heated to a temperature ranging from 40° C. to 80° C.

16. The method of claim 14 , wherein ultra-sonication occurs at a frequency ranging from 70 kHz to 1000 kHz for 5 minutes to 20 minutes.

17. The method of claim 14 , wherein the leached and cleaned glass is dried with use of spin-rinse-drying (“SRD”), isopropanol (“IPA”) drying, or combinations thereof.

18. The method of claim 1 , further comprising forming a TFT by:
depositing a semiconductor layer comprising a material selected from the group consisting of Si, metal oxides, group III-V elements, group II-VI elements, organics, and combinations thereof directly on the chemically treated surface of the glass substrate;
annealing the Si layer to form polycrystalline silicon;
depositing electrodes on the polycrystalline silicon, and patterning the electrodes to form channel regions;
depositing a SiO 2 layer over the channel regions and the electrodes;
depositing an Al gate on the SiO 2 layer, and patterning the gate;
etching via holes through the SiO 2 layer and over the electrodes to form a TFT; and
annealing the TFT.

Assignees

• Corning Inc

Inventors

• Chuang Ta-Ko
• Gu Yunfeng
• Manley Robert George

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P50/264

  by chemical means · CPC title

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title